型号
- 型号
- 关键词
DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | K4N26323AE-GC250 | K4N26323AE-GC200 | K4N26323AE-GC220 |
|---|---|---|---|
| 描述 | DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144 | DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144 | DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | BGA | BGA | BGA |
| 包装说明 | LFBGA, | LFBGA, | LFBGA, |
| 针数 | 144 | 144 | 144 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | S-PBGA-B144 | S-PBGA-B144 | S-PBGA-B144 |
| 长度 | 13 mm | 13 mm | 13 mm |
| 内存密度 | 134217728 bit | 134217728 bit | 134217728 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 |
| 端子数量 | 144 | 144 | 144 |
| 字数 | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 组织 | 4MX32 | 4MX32 | 4MX32 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LFBGA | LFBGA | LFBGA |
| 封装形状 | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.4 mm | 1.4 mm | 1.4 mm |
| 自我刷新 | YES | YES | YES |
| 最大供电电压 (Vsup) | 2.6 V | 2.6 V | 2.6 V |
| 最小供电电压 (Vsup) | 2.4 V | 2.4 V | 2.4 V |
| 标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS |
| 端子形式 | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 13 mm | 13 mm | 13 mm |