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K4S281632I-TC60

Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54,

器件类别：存储    存储   

厂商名称：SAMSUNG(三星)

厂商官网：http://www.samsung.com/Products/Semiconductor/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
Objectid
106541443
包装说明
TSOP, TSOP54,.46,32
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
5 ns
最大时钟频率 (fCLK)
166 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PDSO-G54
内存密度
134217728 bit
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
16
端子数量
54
字数
8388608 words
字数代码
8000000
最高工作温度
70 °C
最低工作温度
组织
8MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP
封装等效代码
TSOP54,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
电源
3.3 V
认证状态
Not Qualified
刷新周期
4096
连续突发长度
1,2,4,8,FP
最大待机电流
0.002 A
最大压摆率
0.22 mA
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
文档预览
K4S280432I
K4S280832I
K4S281632I
Synchronous DRAM
128Mb I-die SDRAM Specification
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 of 14
Rev. 1.1 May 2006
K4S280432I
K4S280832I
K4S281632I
Synchronous DRAM
Year
2005
2006
- Final spec release.
- Added 5ns speed bin for x16
History
Revision History
Revision
1.0
1.1
Month
October
May
2 of 14
Rev. 1.1 May 2006
K4S280432I
K4S280832I
K4S281632I
Synchronous DRAM
8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K Cycle)
• RoHS compliant for Pb-free Package
•
•
•
•
GENERAL DESCRIPTION
The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x
8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high perfor-
mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information
Part No.
K4S280432I-T(U)C/L75
K4S280832I-T(U)C/L75
K4S281632I-T(U)C/L50
K4S281632I-T(U)C/L60
K4S281632I-T(U)C/L75
Orgainization
32Mb x 4
16Mb x 8
8Mb x 16
8Mb x 16
8Mb x 16
Max Freq.
133MHz (CL=3)
133MHz (CL=3)
200MHz (CL=3)
166MHz (CL=3)
133MHz (CL=3)
LVTTL
54pin TSOP(II)
Interface
Package
Organization
32Mx4
16Mx8
8Mx16
Row Address
A0~A11
A0~A11
A0~A11
Column Address
A0-A9, A11
A0-A9
A0-A8
Row & Column address configuration
3 of 14
Rev. 1.1 May 2006
K4S280432I
K4S280832I
K4S281632I
Package Physical Dimension
Synchronous DRAM
0~8°C
0.25
TYP
0.010
#54
#28
0.45~0.75
0.018~0.030
0.05
MIN
0.002
11.76±
0.20
0.463±
0.008
22.62
MAX
0.891
22.22
0.875
0.10
MAX
0.004
(
±
0.10
±
0.004
0.125
+0.075
-0.035
+0.003
0.005
-0.001
0.21
0.008
±
0.05
±
0.002
1.00
0.039
±
0.10
±
0.004
1.20
MAX
0.047
0.71
)
0.028
0.30
-0.05
0.012
+0.004
-0.002
+0.10
0.80
0.0315
54Pin TSOP(II) Package Dimension
4 of 14
Rev. 1.1 May 2006
( 0.50 )
0.020
#1
#27
10.16
0.400
K4S280432I
K4S280832I
K4S281632I
FUNCTIONAL BLOCK DIAGRAM
Synchronous DRAM
I/O Control
LWE
LDQM
Data Input Register
Bank Select
8M x 4 / 4M x 8 / 2M x 16
Sense AMP
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
Programming Register
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Timing Register
LWCBR
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
5 of 14
Rev. 1.1 May 2006
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参数对比
与K4S281632I-TC60相近的元器件有：K4S281632I-UL75T、K4S280832I-UC75T、K4S280832I-TC75、K4S280832I-TL75、K4S280832I-UC75、K4S280832I-UL75、K4S281632I-UL75、K4S281632I-UC60。描述及对比如下：
型号 K4S281632I-TC60 K4S281632I-UL75T K4S280832I-UC75T K4S280832I-TC75 K4S280832I-TL75 K4S280832I-UC75 K4S280832I-UL75 K4S281632I-UL75 K4S281632I-UC60
描述 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54,
Reach Compliance Code compliant unknown unknown compli compli unknow compli compliant compliant
最长访问时间 5 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5 ns
JESD-30 代码 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
内存密度 134217728 bit 134217728 bit 134217728 bit 134217728 bi 134217728 bi 134217728 bi 134217728 bi 134217728 bit 134217728 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 16 16 8 8 8 8 8 16 16
端子数量 54 54 54 54 54 54 54 54 54
字数 8388608 words 8388608 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 8388608 words 8388608 words
字数代码 8000000 8000000 16000000 16000000 16000000 16000000 16000000 8000000 8000000
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 8MX16 8MX16 16MX8 16MX8 16MX8 16MX8 16MX8 8MX16 8MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP TSOP2 TSOP2 TSOP TSOP TSOP TSOP TSOP TSOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
是否Rohs认证 不符合 - - 不符合 不符合 符合 符合 符合 符合
包装说明 TSOP, TSOP54,.46,32 TSOP2, TSOP2, TSOP, TSOP54,.46,32 TSOP, TSOP54,.46,32 - TSOP, TSOP54,.46,32 TSOP, TSOP54,.46,32 TSOP, TSOP54,.46,32
ECCN代码 EAR99 EAR99 EAR99 - - - - EAR99 EAR99
最大时钟频率 (fCLK) 166 MHz - - 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz 166 MHz
I/O 类型 COMMON - - COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 - - 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
输出特性 3-STATE - - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装等效代码 TSOP54,.46,32 - - TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
电源 3.3 V - - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
刷新周期 4096 - - 4096 4096 4096 4096 4096 4096
连续突发长度 1,2,4,8,FP - - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.002 A - - 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
最大压摆率 0.22 mA - - 0.2 mA 0.2 mA 0.2 mA 0.2 mA 0.2 mA 0.22 mA
厂商名称 - SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) - -
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