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K4S510832B-UL750

Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SAMSUNG(三星)
零件包装代码
TSOP2
包装说明
TSOP2,
针数
54
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
5.4 ns
其他特性
AUTO/SELF REFRESH
JESD-30 代码
R-PDSO-G54
JESD-609代码
e6
长度
22.22 mm
内存密度
536870912 bit
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
8
湿度敏感等级
3
功能数量
1
端口数量
1
端子数量
54
字数
67108864 words
字数代码
64000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64MX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.2 mm
自我刷新
YES
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
54 TSOP-II with Pb-Free
(RoHS compliant)
Revision 1.1
August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Revision. 1.1 August 2004
SDRAM 512Mb B-die (x4, x8, x16)
Revision History
Revision 1.0 (January, 2004)
- First release.
Revision 1.1 (August, 2004)
- Corrected typo.
CMOS SDRAM
Revision. 1.1 August 2004
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
54 TSOP(II) Pb-free Package
• RoHS compliant
GENERAL DESCRIPTION
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x
33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor-
mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information
Part No.
K4S510432B-UC(L)75
K4S510832B-UC(L)75
K4S511632B-UC(L)75
Orgainization
128Mb x 4
64Mb x 8
32Mb x 16
Max Freq.
133MHz
133MHz
133MHz
Interface
LVTTL
LVTTL
LVTTL
Package
54pin TSOP(II)
54pin TSOP(II)
54pin TSOP(II)
Organization
128Mx4
64Mx8
32Mx16
Row Address
A0~A12
A0~A12
A0~A12
Column Address
A0-A9, A11, A12
A0-A9, A11
A0-A9
Row & Column address configuration
Revision. 1.1 August 2004
SDRAM 512Mb B-die (x4, x8, x16)
Package Physical Dimension
CMOS SDRAM
0~8°C
0.25
TYP
0.010
#54
#28
0.45~0.75
0.018~0.030
0.05
MIN
0.002
( 0.50 )
0.020
11.76±
0.20
0.463±
0.008
#1
22.62
MAX
0.891
22.22
0.875
0.10
MAX
0.004
0.71
(
)
0.028
±
0.10
±
0.004
#27
0.21
0.008
±
0.05
±
0.002
1.00
0.039
±
0.10
±
0.004
0.30
-0.05
0.012
+0.004
-0.002
+0.10
0.80
0.0315
54Pin TSOP(II) Package Dimension
Revision. 1.1 August 2004
10.16
0.400
0.125
+0.075
-0.035
0.005
+0.003
-0.001
1.20
MAX
0.047
SDRAM 512Mb B-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
I/O Control
LWE
LDQM
Data Input Register
Bank Select
32Mx4 / 16Mx8 / 8Mx16
32Mx4 / 16Mx8 / 8Mx16
32Mx4 / 16Mx8 / 8Mx16
32Mx4 / 16Mx8 / 8Mx16
Refresh Counter
Output Buffer
Row Decoder
Sense AMP
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Timing Register
Programming Register
LWCBR
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Revision. 1.1 August 2004
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参数对比
与K4S510832B-UL750相近的元器件有:K4S511632B-UC750、K4S510432B-UC750、K4S511632B-UL750、K4S510432B-UL750、K4S510832B-UC750、K4S511632B-UC75T。描述及对比如下:
型号 K4S510832B-UL750 K4S511632B-UC750 K4S510432B-UC750 K4S511632B-UL750 K4S510432B-UL750 K4S510832B-UC750 K4S511632B-UC75T
描述 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
包装说明 TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2,
针数 54 54 54 54 54 54 54
Reach Compliance Code compliant compliant compliant compliant compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
长度 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
内存密度 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 8 16 4 16 4 8 16
功能数量 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1
端子数量 54 54 54 54 54 54 54
字数 67108864 words 33554432 words 134217728 words 33554432 words 134217728 words 67108864 words 33554432 words
字数代码 64000000 32000000 128000000 32000000 128000000 64000000 32000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 64MX8 32MX16 128MX4 32MX16 128MX4 64MX8 32MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES YES
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
是否Rohs认证 符合 符合 符合 符合 符合 符合 -
JESD-609代码 e6 - e6 - e6 e6 -
湿度敏感等级 3 3 3 3 3 3 -
峰值回流温度(摄氏度) 260 260 260 260 260 260 -
端子面层 Tin/Bismuth (Sn/Bi) - Tin/Bismuth (Sn/Bi) - Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) -
处于峰值回流温度下的最长时间 NOT SPECIFIED 40 NOT SPECIFIED 40 NOT SPECIFIED NOT SPECIFIED -
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