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K5A3240YBA-T370

Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69

器件类别：存储    存储   

厂商名称：SAMSUNG(三星)

厂商官网：http://www.samsung.com/Products/Semiconductor/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
SAMSUNG(三星)
零件包装代码
BGA
包装说明
TFBGA,
针数
69
Reach Compliance Code
unknown
其他特性
ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM
JESD-30 代码
R-PBGA-B69
长度
11 mm
内存密度
33554432 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
功能数量
1
端子数量
69
字数
2097152 words
字数代码
2000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态
Not Qualified
座面最大高度
1.2 mm
最大供电电压 (Vsup)
3.3 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
宽度
8 mm
文档预览
K5A3x40YT(B)A
Document Title
Multi-Chip Package MEMORY
MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0
1.0
Initial Draft
Final Specification
Draft Date
August 28, 2001
Remark
Preliminary
November 13, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 1.0
November 2001
K5A3x40YT(B)A
Multi-Chip Package MEMORY
MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
FEATURES
•
Power Supply voltage : 2.7V to 3.3V
•
Organization
- Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
- SRAM : 524,288 x 8 / 262,144 x 16 bit
•
Access Time (@2.7V)
- Flash : 80 ns, SRAM : 70 ns
•
Power Consumption (typical value)
- Flash Read Current : 14 mA (@5MHz)
Program/Erase Current : 15 mA
Standby mode/Autosleep mode : 0.2
µA
Read while Program or Read while Erase : 25 mA
- SRAM Operating Current : 17 mA
Standby Current : 0.5
µA
•
Secode(Security Code) Block : Extra 64KB Block (Flash)
•
Support Common Flash Memory Interface
•
Block Group Protection / Unprotection (Flash)
•
Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
•
Flash Endurance : 100,000 Program/Erase Cycles Minimum
•
SRAM Data Retention : 1.5 V (min.)
•
Industrial Temperature : -40°C ~ 85°C
•
Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch
1.2mm(max.) Thickness
GENERAL DESCRIPTION
The K5A3x40YT(B)A featuring single 3.0V power supply is a
Multi Chip Package Memory which combines 32Mbit Dual Bank
Flash and 4Mbit fCMOS SRAM.
The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit
and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit. The
memory architecture of flash memory is designed to divide its
memory arrays into 71 blocks and this provides highly flexible
erase and program capability. This device is capable of reading
data from one bank while programming or erasing in the other
bank with dual bank organization.
The Flash memory performs a program operation in units of 8 bits
(Byte) or 16 bits (Word) and erases in units of a block. Single or
multiple blocks can be erased. The block erase operation is com-
pleted for typically 0.7sec.
The 4Mbit SRAM supports low data retention voltage for battery
backup operation with low data retention current.
The K5A3x40YT(B)A is suitable for the memory of mobile com-
munication system to reduce mount area. This device is available
in 69-ball TBGA Type package.
BALL DESCRIPTION
BALL CONFIGURATION
1
A
B
C
D
E
F
G
H
J
K
N.C
N.C
N.C
Ball Name
A
0
to A
17
Description
Address Input Balls (Common)
Address Input Balls (Flash Memory)
Data Input/Output Balls (Common)
Hardware Reset (Flash Memory)
Write Protection / Acceleration Program
(Flash Memory)
Power Supply (SRAM)
Power Supply (Flash Memory)
Ground (Common)
Upper Byte Enable (SRAM)
Lower Byte Enable (SRAM)
BYTE
S
Control (SRAM)
BYTE
F
Control (Flash Memory)
Address Inputs (SRAM)
Chip Enable (Flash Memory)
Chip Enable (SRAM Low Active)
Chip Enable (SRAM High Active)
Write Enable (Common)
Output Enable (Common)
Ready/Busy (Flash memory)
No Connection
2
3
4
5
N.C
6
N.C
7
8
9
10
A-1, A
18
to A
20
DQ
0
to DQ
15
N.C
RESET
WP/ACC
N.C
A7
LB
WP/
ACC
WE
A8
A11
A3
A6
UB
RESET CS2
S
A19
A12
A15
Vcc
S
Vcc
F
Vss
N.C
A2
A5
A18
RY/BY
A20
A9
A13
N.C
A1
A4
A17
A10
A14
N.C
UB
LB
N.C
A0
Vss
DQ1
DQ6
SA
A16
N.C
BYTE
S
OE
DQ9
DQ3
DQ4
DQ13
DQ15 BYTE
F
/A-1
CE
F
BYTE
F
SA
CE
F
CS1
S
DQ0
DQ10
Vcc
F
Vcc
S
DQ12
DQ7
Vss
DQ8
DQ2
DQ11
BYTE
S
DQ5
DQ14
CS1
S
CS2
S
N.C
N.C
N.C
WE
OE
RY/BY
69 Ball TBGA , 0.8mm Pitch
N.C
Top View (Ball Down)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
-2-
Revision 1.0
November 2001
K5A3x40YT(B)A
ORDERING INFORMATION
MCP MEMORY
K5 A 3x40 Y T A - T 8 70
Samsung
MCP Memory
Device Type
Dual Bank Boot Block NOR
+ fCMOS SRAM
NOR Flash Density
(Bank Size), (Organization)
32
: 32Mbit, (8Mb, 24Mb)
(x8/x16 Selectable)
33
: 32Mbit, (16Mb, 16Mb)
(x8/x16 Selectable)
SRAM Density , Organization
4Mbit, x8/x16 Selectable
Operating Voltage Range
2.7V to 3.3V
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
SRAM Access Time
70 = 70 ns
Flash Access Time
8 = 80 ns
3 = 85 ns
9 = 90 ns
Package
T = 69 TBGA
Version
A = 2nd Generation
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Vcc
F
Vss
RESET
RD/BY
A0 to A17
(Common)
A-1,A18 to A20
BYTE
F
WP/ACC
CE
F
OE
WE
I/O
Interface
&
Bank
Control
Bank1
Address
X
Dec
Bank1
Cell Array
Y Dec
Bank1 Data-In/Out
Bank2 Data-In/Out
Latch &
Control
Y Dec
Bank2
Address
X
Dec
Bank2
Cell Array
Erase
Control
Program
Control
Latch &
Control
High
Voltage
Gen.
Clk gen.
Precharge circuit.
DQ
0
to DQ
7
DQ
8
to DQ
15
SA
UB
LB
BYTE
S
CS1
S
CS2
S
Vcc
S
Vss
Row
select
SRAM
Main Cell Array
(256K x16, 512K x8)
Control
logic
Data
control
I/O Circuit
Column select
Bottom Boot Block
-3-
Revision 1.0
November 2001
K5A3x40YT(B)A
Table 1. Flash Memory Top Boot Block Address (K5A3240YT/K5A3340YT)
K5
A3240
YT
K5
A3340
YT
Block Address
Block
A20
BA70
BA69
BA68
BA67
BA66
BA65
BA64
BA63
Bank1
BA62
BA61
BA60
BA59
BA58
BA57
BA56
BA55
BA54
BA53
Bank1
BA52
BA51
BA50
BA49
BA48
BA47
BA46
BA45
BA44
BA43
BA42
Bank2
BA41
BA40
BA39
BA38
BA37
BA36
BA35
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A19
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A18
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
A17
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
A16
1
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
A15
1
1
1
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
A14
1
1
1
1
0
0
0
0
X
X
X
X
X
X
X
X
X
X
A13
1
1
0
0
1
1
0
0
X
X
X
X
X
X
X
X
X
X
A12
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
Block Size
(KB/KW)
8/4
8/4
8/4
8/4
8/4
8/4
8/4
8/4
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
MCP MEMORY
Address Range
Byte Mode
3FE000H-3FFFFFH
3FC000H-3FDFFFH
3FA000H-3FBFFFH
3F8000H-3F9FFFH
3F6000H-3F7FFFH
3F4000H-3F5FFFH
3F2000H-3F3FFFH
3F0000H-3F1FFFH
3E0000H-3EFFFFH
3D0000H-3DFFFFH
3C0000H-3CFFFFH
3B0000H-3BFFFFH
3A0000H-3AFFFFH
390000H-39FFFFH
380000H-38FFFFH
370000H-37FFFFH
360000H-36FFFFH
350000H-35FFFFH
340000H-34FFFFH
330000H-33FFFFH
320000H-32FFFFH
310000H-31FFFFH
300000H-30FFFFH
2F0000H-2FFFFFH
2E0000H-2EFFFFH
2D0000H-2DFFFFH
2C0000H-2CFFFFH
2B0000H-2BFFFFH
2A0000H-2AFFFFH
290000H-29FFFFH
280000H-28FFFFH
270000H-27FFFFH
260000H-26FFFFH
250000H-25FFFFH
240000H-24FFFFH
230000H-23FFFFH
Word Mode
1FF000H-1FFFFFH
1FE000H-1FEFFFH
1FD000H-1FDFFFH
1FC000H-1FCFFFH
1FB000H-1FBFFFH
1FA000H-1FAFFFH
1F9000H-1F9FFFH
1F8000H-1F8FFFH
1F0000H-1F7FFFH
1E8000H-1EFFFFH
1E0000H-1E7FFFH
1D8000H-1DFFFFH
1D0000H-1D7FFFH
1C8000H-1CFFFFH
1C0000H-1C7FFFH
1B8000H-1BFFFFH
1B0000H-1B7FFFH
1A8000H-1AFFFFH
1A0000H-1A7FFFH
198000H-19FFFFH
190000H-197FFFH
188000H-18FFFFH
180000H-187FFFH
178000H-17FFFFH
170000H-177FFFH
168000H-16FFFFH
160000H-167FFFH
158000H-15FFFFH
150000H-157FFFH
148000H-14FFFFH
140000H-147FFFH
138000H-13FFFFH
130000H-137FFFH
128000H-12FFFFH
120000H-127FFFH
118000H-11FFFFH
-4-
Revision 1.0
November 2001
K5A3x40YT(B)A
Table 1. Flash Memory Top Boot Block Address (K5A3240YT/K5A3340YT)
K5
A3240
YT
K5
A3340
YT
Block Address
Block
A20
BA34
Bank1
BA33
BA32
BA31
BA30
BA29
BA28
BA27
BA26
BA25
BA24
BA23
BA22
BA21
BA20
BA19
BA18
Bank2
Bank2
BA15
BA14
BA13
BA12
BA11
BA10
BA9
BA8
BA7
BA6
BA5
BA4
BA3
BA2
BA1
BA0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
BA17
BA16
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A19
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A18
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
A17
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
A16
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
A15
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
A14
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A13
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A12
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Block Size
(KB/KW)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
MCP MEMORY
Address Range
Byte Mode
220000H-22FFFFH
210000H-21FFFFH
200000H-20FFFFH
1F0000H-1FFFFFH
1E0000H-1EFFFFH
1D0000H-1DFFFFH
1C0000H-1CFFFFH
1B0000H-1BFFFFH
1A0000H-1AFFFFH
190000H-19FFFFH
180000H-18FFFFH
170000H-17FFFFH
160000H-16FFFFH
150000H-15FFFFH
140000H-14FFFFH
130000H-13FFFFH
120000H-12FFFFH
110000H-11FFFFH
100000H-10FFFFH
0F0000H-0FFFFFH
0E0000H-0EFFFFH
0D0000H-0DFFFFH
0C0000H-0CFFFFH
0B0000H-0BFFFFH
0A0000H-0AFFFFH
090000H-09FFFFH
080000H-08FFFFH
070000H-07FFFFH
060000H-06FFFFH
050000H-05FFFFH
040000H-04FFFFH
030000H-03FFFFH
020000H-02FFFFH
010000H-01FFFFH
000000H-00FFFFH
Word Mode
110000H-117FFFH
108000H-10FFFFH
100000H-107FFFH
0F8000H-0FFFFFH
0F0000H-0F7FFFH
0E8000H-0EFFFFH
0E0000H-0E7FFFH
0D8000H-0DFFFFH
0D0000H-0D7FFFH
0C8000H-0CFFFFH
0C0000H-0C7FFFH
0B8000H-0BFFFFH
0B0000H-0B7FFFH
0A8000H-0AFFFFH
0A0000H-0A7FFFH
098000H-09FFFFH
090000H-097FFFH
088000H-08FFFFH
080000H-087FFFH
078000H-07FFFFH
070000H-077FFFH
068000H-06FFFFH
060000H-067FFFH
058000H-05FFFFH
050000H-057FFFH
048000H-04FFFFH
040000H-047FFFH
038000H-03FFFFH
030000H-037FFFH
028000H-02FFFFH
020000H-027FFFH
018000H-01FFFFH
010000H-017FFFH
008000H-00FFFFH
000000H-007FFFH
Note :
The address range is A20
∼
A-1 in the byte mode ( BYTE
F
= V
IL
) or A20
∼
A0 in the word mode ( BYTE
F
= V
IH
).
The bank address bits is A20
∼
A19 for K5A3240YT, A20 for K5A3340YT.
Table 2. Secode Block Addresses for Top Boot Devices
Device
K5A3240YT/K5A3340YT
Block Address
A20-A12
111111xxx
Block
Size
64/32
(X8)
Address Range
3F0000H-3FFFFFH
(X16)
Address Range
1F8000H-1FFFFFH
-5-
Revision 1.0
November 2001
查看更多>
参数对比
与K5A3240YBA-T370相近的元器件有：K5A3340YTA-T870、K5A3340YBA-T370、K5A3340YBA-T870、K5A3340YBA-T970、K5A3340YTA-T370、K5A3240YTA-T370、K5A3240YTA-T970。描述及对比如下：
型号 K5A3240YBA-T370 K5A3340YTA-T870 K5A3340YBA-T370 K5A3340YBA-T870 K5A3340YBA-T970 K5A3340YTA-T370 K5A3240YTA-T370 K5A3240YTA-T970
描述 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA,
针数 69 69 69 69 69 69 69 69
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
其他特性 ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM
JESD-30 代码 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69 R-PBGA-B69
长度 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm
内存密度 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1
端子数量 69 69 69 69 69 69 69 69
字数 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
厂商名称 SAMSUNG(三星) SAMSUNG(三星) - - SAMSUNG(三星) - SAMSUNG(三星) SAMSUNG(三星)
Base Number Matches - 1 1 1 1 1 1 -
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