KAI-43140
8040 (X) x 5360 (V)
Interline CCD Image Sensor
Description
The KAI−43140 image sensor is a 43 megapixel Interline Transfer
CCD in a 35 mm optical format. Leveraging a 4.5
mm
pixel design that
provides a 50% resolution increase compared to the KAI−29050 and
KAI−29052 devices, the KAI−43140 provides excellent image
uniformity and broad dynamic range. A flexible output architecture
supports 1, 2, or 4 outputs for full resolution readout of up to 4 frames
per second, and a true electronic shutter enables image capture without
motion artifacts across a broad range of exposure times.
In addition to standard monochrome and Bayer Color
configurations, the sensor is available in a Sparse CFA configuration
which provides a 2x improvement in light sensitivity compared to the
standard Bayer Color part. The sensor shares the same package as the
KAI−29050 and KAI−29052 image sensors, simplifying camera
design
.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Aspect Ratio
Number of Outputs
Charge Capacity
Output Sensitivity
Quantum Efficiency
Pan (−AXA,
−QXA)
R, G, B (−FXA,
−QXA)
Read Noise (f = 60 MHz)
Dark Current
Photodiode
VCCD
Dynamic Range
Charge Transfer Efficiency
Blooming Suppression
Smear
Image Lag
Maximum Pixel Clock Speed
Maximum Frame Rates
Quad Output
Dual Output
Single Output
Package
Cover Glass
NOTE:
Typical Value
Interline CCD; Progressive Scan
8160 (H) x 5480 (V)
8080 (H) x 5400 (V)
8040 (H) x 5360 (V)
4.5
mm
(H) x 4.5
mm
(V)
36.18 mm (H) x 24.12 mm (V)
43.48 mm (Diag.), 35 mm Optical Format
3:2
1, 2, or 4
13,000 electrons
42
mV/e−
45 %
27%, 34%, 37%
13 electrons rms
7 electrons/s
50 electrons/s
60 dB
0.999999
> 300 X
−98
dB
< 10 electrons
60 MHz
4 fps
2 fps
1 fps
72 pin PGA
AR Coated, 2 Sides
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Figure 1. KAI−43140 CCD Image Sensor
Features
•
High Resolution Image Capture in 35 mm
•
•
•
•
Optical Format
True Electronic Shutter with Broad Exposure
Latitude
Low Noise Architecture
Excellent Smear Performance
Monochrome, Bayer Color, and Sparse
CFA Configurations
Applications
•
Industrial Imaging and Inspection
•
Security and Surveillance
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
All parameters are specified at T = 40°C unless otherwise noted.
©
Semiconductor Components Industries, LLC, 2015
May, 2018
−
Rev. 0
1
Publication Order Number:
KAI−43140/D
KAI−43140
ORDERING INFORMATION
Table 2. ORDERING INFORMATION
Part Number
KAI−43140−AXA−JD−B1
KAI−43140−AXA−JD−B2
KAI−43140−AXA−JD−AE
KAI−43140−AXA−JP−B1
KAI−43140−AXA−JP−B2
KAI−43140−AXA−JP−AE
KAI−43140−FXA−JD−B1
KAI−43140−FXA−JD−B2
KAI−43140−FXA−JD−AE
KAI−43140−QXA−JD−B1
KAI−43140−QXA−JD−AE
Description
Monochrome, Special Microlens, PGA Package, Sealed Clear Cover Glass
with AR coating (both sides), Grade 1
Monochrome, Special Microlens, PGA Package, Sealed Clear Cover Glass
with AR coating (both sides), Grade 2
Monochrome, Special Microlens, PGA Package, Sealed Clear Cover Glass
with AR coating (both sides), Engineering Grade
Monochrome, Special Microlens, PGA Package, Taped Clear Cover Glass
(no coatings), Grade 1
Monochrome, Special Microlens, PGA Package, Taped Clear Cover Glass
(no coatings), Grade 2
Monochrome, Special Microlens, PGA Package, Taped Clear Cover Glass
(no coatings), Engineering Grade
Gen2 Color (Bayer RGB), Special Microlens, PGA Package, Sealed Clear
Cover Glass with AR coating (both sides), Grade 1
Gen2 Color (Bayer RGB), Special Microlens, PGA Package, Sealed Clear
Cover Glass with AR coating (both sides), Grade 2
Gen2 Color (Bayer RGB), Special Microlens, PGA Package, Sealed Clear
Cover Glass with AR coating (both sides), Engineering Grade
Gen2 Color (Sparse CFA), Special Microlens, PGA Package, Sealed Clear
Cover Glass with AR coating (both sides), Grade 1
Gen2 Color (Sparse CFA), Special Microlens, PGA Package, Sealed Clear
Cover Glass with AR coating (both sides), Engineering Grade
KAI−43140−QXA
Serial Number
KAI−43140−FXA
Serial Number
KAI−43140−AXA
Serial Number
Marking Code
KAI−43140−AXA
Serial Number
See the ON Semiconductor
Device Nomenclature
document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com.
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2
KAI−43140
DEVICE DESCRIPTION
Architecture
FDGcd
H2Bc
H2Sc
H1Bc
H1Sc
H2Bd
H2Sd
H1Bd
H1Sd
FDGcd
SUB
RDcd
Rc
VDDc
VOUTc
GND
OGc
H2SLc
V4T
V3T
V2T
V1BT
1 11 40 8 12
RDcd
Rd
12 8 40 11 1
VDDd
VOUTd
GND
OGd
H2SLd
V4T
V3T
V2T
V1BT
DevID
4020
FLD
40
8
12
4020
ESD
V1BT
V2B
V3B
V4B
VDDa
VOUTa
GND
OGa
H2SLa
1 11 40 8 12
Dark Reference Pixels
There are 40 dark reference rows at the top and 40 dark
rows at the bottom of the image sensor. The dark rows are not
entirely dark and so should not be used for a dark reference
level. Use the 40 dark columns on the left or right side of the
image sensor as a dark reference. Under normal
circumstances use only the center 38 columns of the 40
column dark reference due to potential light leakage.
Dummy Pixels
Within each horizontal shift register there are 12 leading
additional shift phases. These pixels are designated as
dummy pixels and should not be used to determine a dark
reference level. In addition, there is one dummy row of
pixels at the top and bottom of the image.
Active Buffer Pixels
20 unshielded pixels adjacent to any leading or trailing
dark reference regions are classified as active buffer pixels.
These pixels are light sensitive but are not tested for defects
and non−uniformities. The 8 outer buffer pixels are less
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
RDab
Ra
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
40
8 12
8040H x 5360V
4.5mm x 4.5mm Pixels
12 8
40
ESD
12 Inner Buffer
8 Outer Buffer
40 Dark
FLD
V1BT
V2B
V3B
V4B
RDab
Rb
VDDb
VOUTb
GND
OGb
H2SLb
4020
4020
12 8 40 11 1
FDGab
H2Ba
H2Sa
H1Ba
H1Sa
H2Bb
H2Sb
H1Bb
H1Sb
FDGab
Figure 2. Block Diagram
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3
SUB
sensitive than the inner buffer pixels. The inner buffer pixels
have the same sensitivity as the 8040 by 5360 active pixels.
Image Acquisition
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron−hole pairs within the individual silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photo−site. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent upon light level
and exposure time and non−linearly dependent on
wavelength. When the photodiodes charge capacity is
reached, excess electrons are discharged into the substrate to
prevent blooming.
ESD Protection
Adherence to the power−up and power−down sequence is
critical. Failure to follow the proper power−up and
power−down sequences may cause damage to the sensor.
See Power−Up and Power−Down Sequence section.
KAI−43140
Bayer Color Filter
FDGcd
H2Bc
H2Sc
H1Bc
H1Sc
H2Bd
H2Sd
H1Bd
H1Sd
FDGcd
SUB
RDcd
Rc
VDDc
VOUTc
GND
OGc
H2SLc
V4T
V3T
V2T
V1BT
1 11 40 8 12
RDcd
Rd
12 8 40 11 1
VDDd
VOUTd
GND
OGd
H2SLd
V4T
V3T
V2T
V1BT
DevID
ESD
V1BT
V2B
V3B
V4B
VDDa
VOUTa
GND
OGa
H2SLa
1 11 40 8 12
Sparse Color Filter
FDGcd
H2Bc
H2Sc
H1Bc
H1Sc
H2Bd
H2Sd
H1Bd
H1Sd
FDGcd
SUB
RDcd
Rc
VDDc
VOUTc
GND
OGc
H2SLc
V4T
V3T
V2T
V1BT
1 11 40 8 12
ESD
V1BT
V2B
V3B
V4B
VDDa
VOUTa
GND
OGa
H2SLa
1 11 40 8 12
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
RDab
Ra
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
RDab
Ra
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
FLD
40
8
12
B G
G R
B G
G R
40
8 12
4020
4020
8040H x 5360V
4.5mm x 4.5mm Pixels
12 8
40
ESD
B G
G R
12 Inner Buffer
8 Outer Buffer
40 Dark
FLD
B G
G R
V1BT
V2B
V3B
V4B
RDab
Rb
VDDb
VOUTb
GND
OGb
H2SLb
4020
4020
12 8 40 11 1
Figure 3. Bayer Color Filter Pattern
ÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍÍ
FDGab
H2Ba
H2Sa
H1Ba
H1Sa
4020
H2Bb
H2Sb
H1Bb
H1Sb
FDGab
4020
FLD
40
8
12
SUB
RDcd
Rd
12 8 40 11 1
VDDd
VOUTd
GND
OGd
H2SLd
V4T
V3T
V2T
V1BT
DevID
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
40
8 12
8040H x 5360V
4.5mm x 4.5mm Pixels
12 8
40
ESD
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
12 Inner Buffer
8 Outer Buffer
40 Dark
FLD
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
V1BT
V2B
V3B
V4B
RDab
Rb
VDDb
VOUTb
GND
OGb
H2SLb
4020
4020
12 8 40 11 1
Figure 4. Sparse Color Filter Pattern
FDGab
H2Ba
H2Sa
H1Ba
H1Sa
H2Bb
H2Sb
H1Bb
H1Sb
FDGab
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4
SUB
KAI−43140
PHYSICAL DESCRIPTION
Pin Description and Device Orientation
H2SLd
H2SLc
VDDd
VDDc
V1BT
V4T
V4B
H2Sd
H1Bd
V1BT
H1Bc
H2Sc
GND
GND
SUB
V3T
71 69 67 65 63 61 59 57 55 53 51 49 47 45 43 41 39 37
72 70 68 66 64 62 60 58 56 54 52 50 48 46 44 42 40 38
ESD
V2T
VOUTc
RDcd
OGc
H2Bc
H1Sc
FDGcd
FDGcd
H1Sd
H2Bd
OGd
RDcd
VOUTd
V2T
V4T
DevID
Pixel
(1,1)
VOUTa
VOUTb
FDGab
FDGab
RDab
RDab
H2Ba
H1Sa
H1Sb
H2Bb
V3T
N/C
Rd
Rc
OGa
OGb
ESD
V2B
V2B
V4B
4
1
V3B
6
5
VDDa
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
7
GND
3
V1BT
9 11 13 15 17 19 21 23 25 27 29 31 33 35
H1Ba
H2Sa
SUB
N/C
H2Sb
H1Bb
H2SLb
Ra
H2SLa
Rb
GND
VDDb
V1BT
V3B
Figure 5. Package Pin Description
−
Top View
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5
stm32/stm8
