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KBP202

2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:分立半导体    普通整流桥   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
Package
KBP
Maximum recurrent peak reverse voltage
200
Maximum average forward rectified curre
2
Peak forward surge curre
80
Maximum instantaneous forward voltage
1.1
Maximum reverse curre
10
TJ(℃)
-55~+150
文档预览
KBP201-KBP207
Single Phase 2.0AMP. Silicon Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
2.0 Amperes
KBP
Features
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction technique
results in inexpensive product
High temperature soldering guaranteed:
260
/ 10 seconds at 5 lbs. ( 2.3 Kg )
tension
Small size, simple installation
.460(11.68)
.420(10.6)
AC
.035(0.9)
.028(0.7)
.5 (12.7)
MIN
.160(4.1)
SPACING
.140(3.6)
.600(15.50)
.560(14.00)
.153(3.9)
.146(3.2)
.050(1.27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
KBP KBP KBP
Type Number
201
202
203
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
= 50℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=125℃
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
KBP
204
KBP
205
KBP
206
KBP
207
Units
V
V
V
A
A
V
uA
uA
℃/W
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
T
J
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.2
600
420
600
800 1000
560 700
800 1000
T
STG
Note: Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B.
With 0.47 x 0.47” (12 x 12mm) Copper Pads.
10
500
25
8
-55 to +125
-55 to +150
http://www.luguang.cn
mail:lge@luguang.cn
KBP201-KBP207
Single Phase 2.0AMP. Silicon Bridge Rectifiers
RATINGS AND CHARACTERISTIC CURVES (KBP201 THRU KBP207)
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
60
2.0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)
PEAK FORWARD SURGE CURRENT. (A)
50
1.5
40
30
1.0
20
0.5
10
0
1
2
4
6
10
20
40
60
100
0
20
40
60
80
100
o
120
140 150
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER BRIDGE ELEMENT
10
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
INSTANTANEOUS FORWARD CURRENT. (A)
1
INSTANTANEOUS REVERSE CURRENT. ( A)
TJ=125
0
C
10
0.1
1
TJ=25
0
C
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0.1
0
20
40
60
80
100
120
140
0
INSTANTANEOUS FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
http://www.luguang.cn
mail:lge@luguang.cn
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参数对比
与KBP202相近的元器件有:KBP201、KBP203、KBP204、KBP205、KBP206、KBP207。描述及对比如下:
型号 KBP202 KBP201 KBP203 KBP204 KBP205 KBP206 KBP207
描述 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W 2 A, SILICON, BRIDGE RECTIFIER DIODE
Package KBP KBP - KBP - KBP -
Maximum recurrent peak reverse voltage 200 100 - 400 - 600 -
Maximum average forward rectified curre 2 2 - 2 - 2 -
Peak forward surge curre 80 80 - 80 - 80 -
Maximum instantaneous forward voltage 1.1 1.1 - 1.1 - 1.1 -
Maximum reverse curre 10 10 - 10 - 10 -
TJ(℃) -55~+150 -55~+150 - -55~+150 - -55~+150 -
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