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KBU6M

6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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器件:KBU6M

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KBU6A THRU KBU6M
Features
· Diffused Junction
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 250A Peak
· Ideal for Printed Circuit Board Applications
· Case to Terminal Isolation Voltage 1500V
· Plastic Material - UL Flammability
Classification Rating 94V-0
CURRENT 6.0 Amperes
VOLTAGE 50 to 1000 Volts
A
C
B
D
K
L
M
-
J
~
~
+
E
N
P
Mechanical Data
· Case : Molded Plastic
· Terminals : Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity : As Marked on Case
· Mounting : Through Hole for #6 Screw
· Mounting Torque : 5.0 Inch-pounds Maximum
· Weight : 8.0 grams (approx.)
· Mounting Position : Any
· Marking : Type Number
H
Dim
A
B
C
D
E
G
H
G
KBU
Min
Max
Dim
Min
J
22.70
23.70
25.40
3.80
4.10
K
16.80
4.20
4.70
L
M
1.70
2.20
6.60
N
4.70
10.30
11.30
4.50
6.80
P
1.20
4.80
5.80
A ll Dimens ions in mm
Max
19.30
17.80
7.10
5.20
1.30
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
RMS Reverse voltage
Average Rectified Output Current
@ T
C
=100
V
RMM
V
RWM
V
R
V
RMS
Io
I
FSM
V
FM
I
RM
I
2
t
JA
T
j
T
STG
KBU
6A
50
35
KBU
6B
100
70
KBU
6D
200
140
KBU
6G
400
280
6.0
200
1.0
10
1.0
166
6.3
-65 to +150
KBU
6J
600
420
KBU
6K
800
560
KBU
6M
1000
700
Units
Volts
Volts
Amps
Amps
Volts
μA
mA
A
2S
℃/W
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
Forward voltage (per element)
Peak Reverse Current at Rated
DC Blocking voltage
I
2
t Rating for Fusing (Note 2)
Typical Thermal Resistance,
Junction to Case (Note 1)
Operating and Storage Temperature Range
@ I
F
=3.0 A
@ T
C
=25℃
@ T
C
=100℃
Notes:
(1) Thermal resistance junction to case mounted on heat sink.
(2) Non-repetitive, for t > 1.0ms and t < 8.3ms.
RATINGS AND CHARACTERISTIC CURVES KBU6A THRU KBU6M
6
5
100
I
F
, INS TANTANE OUS F WD C UR R E NT (A)
I
(AV )
, AV E R AG E OUT P UT C UR R E NT (A)
4
3
2
1
S ingle P has e Half Wave
60 Hz R es is tive or Inductive Load
10
1.0
T
j
= 25º
C
P uls e Width = 300 ms
0
20
40
60
80
100 120 140
T
C
, C AS E T E MP E R AT UR E (º )
C
F ig. 1 F orward C urrent Derating C urve
0.1
0.6
0.7
0.8
0.9
1.0
1.1 1.2
1.3
V
F
, INS TANTANE OUS F WD V OLTAG E (V )
F ig. 2 Typical F orward C haracteris tics
250
I
F S M
, P E AK F WD S UR G E C UR R E NT (A)
400
200
C
j
, C APAC ITANC E (pF )
150
100
100
50
8.3ms S ingle Half S ine- ave
W
J E DE C Method
T
j
= 25º
C
f = 1MHz
10
100
NUMB E R OF C Y LE S AT 60 Hz
C
F ig. 3 Max Non- epetitive P eak F wd S urge C urrent
R
I
R
, INS TANTANE OUS R E V E R S E C UR R E NT (mA)
10
0
10
1
10
100
V
R
, R E V E R S E V OLTAG E (V )
F ig. 4 Typical J unction C apacitance P er E lement
1
T
j
= 100º
C
1.0
0.1
T
j
= 25º
C
0.01
0
20
40
60
80
100
120 140
R AT E D P E R C E NT OF P E AK R E V E R S E V OLTAG E (%
)
F ig. 5 Typical R evers e C haracteris tics
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参数对比
与KBU6M相近的元器件有:KBU6K。描述及对比如下:
型号 KBU6M KBU6K
描述 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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