DRAM MODULE
KMM5322200C2W/C2WG
2Mx32 DRAM SIMM
(1MX16 Base)
Revision 0.0
November 1997
-1-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
Revision History
Version 0.0 (November 1997)
• Changed module PCB from 6-Layer to 4-Layer.
KMM5322200C2W/C2WG
• Changed Module Part No. from KMM5322200CW/CWG to KMM5322200C2W/C2WG caused by PCB revision .
-2-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
KMM5322200C2W/C2WG with Fast Page Mode
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5322200C2W is a 2Mx32bits Dynamic
RAM high density memory module. The Samsung
KMM5322200C2W consists of four CMOS 1Mx16bits DRAMs
in 42-pin SOJ packages mounted on a 72-pin glass-epoxy
substrate. A 0.1 or 0.22uF decoupling capacitor is mounted
on the printed circuit board for each DRAM. The
KMM5322200C2W is a Single In-line Memory Module with
edge connections and is intended for mounting into 72 pin
edge connector sockets.
KMM5322200C2W/C2WG
FEATURES
• Part Identification
- KMM5322200C2W(1024 cycles/16ms Ref, SOJ, Solder)
- KMM5322200C2WG(1024 cycles/16ms Ref, SOJ, Gold)
• Fast Page Mode Operation
• CAS-before-RAS refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V
±10%
power supply
• JEDEC standard PDPin & pinout
• PCB : Height(750mil), double sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
15ns
15ns
t
RC
90ns
110ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
Res(A10)
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
Res(A11)
Vcc
A8
A9
RAS1
RAS0
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A9
DQ0 - DQ31
W
RAS0 , RAS1
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Res
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
Reserved Pin
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
NC
NC
Vss
Vss
60NS
NC
NC
NC
NC
* Pin connection changing available
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
-3-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
KMM5322200C2W/C2WG
DQ0-DQ15
RAS0
RAS
U0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
U2
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15 A0-A9
RAS
RAS1
CAS0
LCAS
LCAS
CAS0
CAS1
UCAS
UCAS
CAS1
OE
OE
A0-A9
W
W
DQ16-DQ31
RAS
U1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
U3
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15 A0-A9
RAS
CAS2
LCAS
LCAS
CAS2
CAS3
UCAS
UCAS
CAS3
OE
A0-A9
W
OE
W
A0-A9
W
Vcc
.1 or .22uF Capacitor
for each DRAM
Vss
To all DRAMs
-4-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
KMM5322200C2W/C2WG
Rating
-1 to +7.0
-1 to +7.0
-55 to +150
4
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
CC
+2.0V/20ns, Pulse width is measured at V
CC
.
*2 : -2.0V/ 20ns, Pulse width is measured at V
SS
.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1
*1
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM5322200C2W/C2WG
Min
-
-
Max
304
284
8
304
284
184
164
4
304
284
20
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-20
-10
2.4
-
: Operating Current * ( RAS, LCAS or UCAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=LCAS=UCAS=W=V
IH
)
: RAS Only Refresh Current * ( LCAS=UCAS=V
IH
, RAS cycling @
t
RC
=min)
: Fast Page Mode Current * ( RAS=V
IL
, LCAS or UCAS cycling :
t
PC
=min)
: Standby Current ( RAS=LCAS=UCAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤V
OUT
≤Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one page mode cycle,
t
PC
.
-5-
Rev. 0.0 (Nov. 1997)
嵌入式系统
