JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
KSA931
TRANSISTOR (PNP)
1.EMITTER
FEATURE
Low Frequency Amplifier
Medium Speed Switching
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-8
-0.7
1
150
-55 to +150
Units
V
V
V
A
W
℃
℃
123
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test conditions
I
C
= -100μA, I
E
=0
I
C
= -10mA ,
I
B
=0
Min
-80
-60
-8
-0.1
-0.1
40
320
-0.7
-1.2
100
13
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
E
= -100μA, I
C
=0
V
CB
= -60 V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-2 V, I
C
= -50mA
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -10 V, I
C
=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
R
40-80
O
70-140
Y
120-240
GR
160-320
A,Apr,2011
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