KSB601
KSB601
Low Frequency Power Amplifier
• Medium Speed Switching Industrial Use
• Complement to KSD560
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-7
-5
-8
- 0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Test Condition
I
C
= - 3A, I
B1
= - 3mA,
L = 1mH
I
C
= - 3A, I
B1
= - I
B2
= - 3mA
V
BE
(off) = 5V, L =180µH
Clamped
I
C
= - 6A, I
B1
= - 12mA
I
B2
= 3mA, V
BE
(off) = 5V
L = 180uH, Clamped
V
CB
= - 100V, I
E
= 0
V
CE
= - 100V, R
BE
= 51Ω
T
C
= 125°C
V
CE
= - 100V, V
BE
(off) = 1.5V
V
CE
= - 100V, V
BE
(off) = 1.5V
T
C
= 125°C
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 3A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 3A, I
B
= - 3mA
I
C
= - 3A, I
B
= - 3mA
V
CC
= - 50V , I
C
= - 3A
I
B1
= - I
B2
= - 3mA
R
L
= 17Ω
0.5
1
1
2000
500
Min.
-
100
-
100
-
100
- 10
-1
- 10
-1
-3
15000
- 1.5
-2
V
V
µs
µs
µs
Typ.
Max.
Units
V
V
V
CEX
(sus)2
Collector-Emitter Sustaining Voltage
V
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
S
t
F
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage
Fall time
µA
mA
µA
mA
mA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classification
Classification
h
FE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Typical Characteristics
-5
I
C
[A], COLLECTOR CURRENT
-4
I
B
= -10mA
I
B
= -6mA
I
B
= -4mA
I
B
=
m
-2
A
10000
V
CE
= -2V
A
-1.5m
I
B
=
I
B
= -1.0mA
-3
h
FE
, DC CURRENT GAIN
-5
1000
I
B
= -0.8mA
-2
I
B
= -0.6mA
-1
100
I
B
= -0.4mA
-0
-1
-2
-3
-4
10
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat)[V],V
BE
(sat)[V] SATURATION VOLTAGE
-10
I
C
= 1000 I
B
-10
I
C
[A], COLLECTOR CURRENT
100ms
-1
V
BE
(sat)
10m
s
Dis
sip
atio
Li m
ited n
100
s
1m
us
50u
s
30
0u
s
s/b
-1
L im
V
CE
(sat)
-0.1
ite
d
-0.01
-0.1
-0.1
-0.001
-1
-10
-100
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
-16
160
-14
140
I
C
[A], COLLECTOR CURRENT
-12
120
-10
dT[%], Ic DERATING
100
-8
80
s/b
60
-6
Di
ss
Lim
ip
a
ite
d
-4
40
tio
n
Li
m
ite
d
-2
20
-0
-20
-40
-60
-80
-100
-120
-140
-160
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Areas
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Typical Characteristics
(Continued)
40
35
P
C
[W], POWER DISSIPATION
30
25
20
15
10
5
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB601
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
