JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KSC5019
TRANSISTOR (NPN)
1.EMITTER
FEATURES
Low V
CE(sat)
General Purpose Amplifier Transistor
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
10
6
2
750
166
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
30
10
6
0.1
0.1
140
70
0.5
1.5
27
150
V
V
pF
MHz
600
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 0.1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
I
C
=2A,I
B
=50mA
V
CE
=1V, I
C
=500mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=1V,I
C
= 500mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
CLASSIFICATION OF h
FE(1)
RANK
RANGE
L
140-240
M
200-330
N
300-450
P
420-600
A,Dec,2010
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