JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
KSD1020
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Complementary to KSB811
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
5
1
350
357
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE (sat)
C
ob
f
T
Test
conditions
Min
40
30
5
0.1
0.1
70
400
0.5
1.2
16
130
V
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 0.1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=1A,I
B
=0.1A
I
C
=1A,I
B
=0.1A
V
CB
=6V,I
E
=0, f=1MHz
V
CE
=6V,I
C
=10mA
CLASSIFICATION OF h
FE
RANK
RANGE
O
70-140
Y
120-240
G
200-400
A,Dec,2010
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