JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTA1270
TRANSISTOR (PNP)
TO-92
FEATURES
General Purpose Application Switching
Application
1.EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.5
500
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(on)
V
CE
=-6 V,
I
C
= -400mA
25
-0.25
-1
200
13
V
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V, I
C
= -100mA
V
CE
=-6 V, I
C
= -20mA
f =100MHz
V
CB
=-6V,I
E
=0,f=1MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
Test
conditions
Min
-35
-30
-5
-0.1
-0.1
70
240
Typ
Max
Unit
V
V
V
µA
µA
I
C
= -100µA, I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -35 V , I
E
=0
V
EB
= -5 V ,
V
CE
=-1 V,
I
C
=0
I
C
= -100mA
Transition frequency
Collector output capacitance
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
h
FE(1)
Range
h
FE(2)
25(min)
40(min)
O
70-140
Y
120-240
A,June,2011
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