JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KTA1281
TRANSISTOR (PNP)
1.
EMITTER
FEATURES
Low Collector Saturation Voltage: V
CE(sat)
=-0.5V(Max.)(I
C
=-1A)
High Speed Switching
Time:
t
stg
=1.0
μS(Typ.).
Complementary to KTC3209.
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
2.
COLLECTOR
3.
BASE
Value
-50
-50
-5
-2
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Out capacitance
Turn-on time
Storage time
Fall time
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
on
t
s
t
f
V
CC
=-30V,I
B1
=-I
B2
=-0.05A,
I
C
=-1A
V
CE
= -2V,
I
C
= -1.5A
40
-0.5
-1.2
100
40
0.1
1
0.1
V
V
MHz
pF
us
us
us
I
C
=-1A, I
B
= -0.05A
I
C
=-1A, I
B
= -0.05A
V
CE
=-2V, I
C
=-0.5A
V
CB
= -10 V , I
E
=0 , f=1MH
Z
Test
conditions
Min
-50
-50
-5
-0.1
-0.1
70
240
Typ
Max
Unit
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I
C
= -100 uA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
= -50 V , I
E
=0
V
EB
= -5V ,
V
CE
= -2V,
I
C
=0
I
C
= -0.5A
μ
A
μ
A
CLASSIFICATION OF h
FE(1)
Rank
Range
O
70-140
Y
120 - 240
A,Jun,2011
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