JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3203
TRANSISTOR (NPN)
TO-92
1. EMITTER
FEATURES
Complementary to KTA1271
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
2. COLLECTOR
3. BASE
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
V
CE(sat)
V
BE
f
T
C
ob
V
CE
=1V, I
C
= 700mA
I
C
= 500 mA, I
B
= 20mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 5 V, I
C
= 10mA
V
CB
=10V,I
E
= 0,f=1MHz
120
13
35
0.5
0.8
V
V
MHz
pF
Test
conditions
Min
35
30
5
0.1
0.2
0.1
100
320
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= 0.1mA, I
B
=0
I
C
= 10mA, I
B
=0
I
E
= 0.1mA, I
C
=0
V
CB
= 35V ,
V
CE
= 25V ,
I
E
=0
I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 100mA
CLASSIFICATION OF h
FE(1)
Rank
Range
O
100-200
Y
160-320
A,June,2011
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