JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KTD1146
TRANSISTOR (NPN)
1.EMITTER
FEATURES
Low V
CE(sat)
.
High Performance at Low Supply Voltage.
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
7
5
0.625
200
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition Frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
Symbol
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
*
Test
conditions
Min
40
20
7
Typ
Max
Unit
V
V
V
I
C
= 0.1mA ,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=2V, I
C
=500mA
I
C
=3A,I
B
=60mA
V
CE
=6V,I
C
=50mA
0.1
0.1
120
20
700
0.4
μA
μA
V
MHz
V
CE(sat)
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120-240
Y
200-400
GR
350-700
A,Dec,2010
电子工程世界
