JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO – 220
KTD1351
TRANSISTOR (NPN)
1. BASE
FEATURES
Low Saturations Voltage
APPLICATIONS
General Purpose Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
7
3
2
63
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
60
60
7
0.1
0.1
60
300
1
1
35
3
V
V
pF
MHz
Typ
Max
Unit
V
V
V
mA
mA
I
C
=100µA,I
E
=0
I
C
=50mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=5V, I
C
=0.5A
I
C
=2A,I
B
=0.2A
V
CE
=5V, I
C
=0.5A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=0.5A
CLASSIFICATION OF h
FE
RANK
RANGE
O
60-120
Y
100-200
GR
150-300
A,Dec,2010