JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTD1898
TRANSISTOR (NPN)
1. BASE
FEATURES
Small Flat Package
General Purpose Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test
conditions
Min
100
80
5
1
1
70
20
100
400
0.4
V
pF
MHz
Typ
Max
Unit
V
V
V
µA
µA
I
C
=0.1mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=80V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=3V, I
C
=500mA
I
C
=500mA,I
B
=20mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
=50mA,
f=100MHz
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
O
70–140
ZO
Y
120–240
ZY
GR
200–400
ZG
A,Nov,2010
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