MUBW20-06A6K
Converter - Brake - Inverter
Module
(CBI 1)
NPT IGBT
Preliminary data
Part name
(Marking on product)
MUBW20-06A6K
Three Phase
Rectifier
I
DAVM25
=
I
FSM
Brake
Chopper
Three Phase
Inverter
= 600 V
= 25 A
V
RRM
= 1600 V V
CES
= 600 V V
CES
95 A I
C25
= 12 A I
C25
= 250 A V
CE(sat)
= 2.25 V V
CE(sat)
= 2.0 V
E72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Package:
• UL registered
• Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
20090929b
© 2009 IXYS All rights reserved
1-5
MUBW20-06A6K
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 15 A; V
GE
= 15 V
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 15 A
inductive load
V
CE
= 300 V; I
C
= 15 A
V
GE
= ±15 V; R
G(on)
= 39
W
R
G(off)
= 22
W
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
600
±20
±30
25
17
85
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
2.0
2.3
4.5
1.3
2.4
6.5
0.6
100
800
57
30
25
160
50
0.42
0.44
30
RBSOA; V
GE
= ±15 V; R
G
= 68
W
L = 100 µH; clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
V
CE
= 600 V; V
GE
= ±15 V;
R
G
= 68
W;
non-repetitive
(per IGBT)
(per IGBT)
T
VJ
= 125°C
t
SC
(SCSOA)
R
thJC
R
thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
10
1.5
0.55
µs
K/W
K/W
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 15 A; V
GE
= 0 V
V
R
= 300 V
di
F
/dt = -400 A/µs
I
F
= 15 A; V
GE
= 0 V
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 100°C
min.
typ.
max.
600
36
24
2.1
Unit
V
A
A
V
V
A
ns
µJ
1.5
14
80
tbd
1.6
0.55
K/W
K/W
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20090929b
© 2009 IXYS All rights reserved
2-5
MUBW20-06A6K
Brake Chopper T7
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 10 A; V
GE
= 15 V
I
C
= 0.2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 6 A
inductive load
V
CE
= 300 V; I
C
= 8 A
V
GE
= ±15 V; R
G(on)
= 54
W
R
G(off)
= 22
W
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
600
±20
±30
11
8
50
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
2.65
3.1
4.5
0.7
3.3
6.5
0.1
120
220
32
20
10
110
30
0.21
0.26
18
RBSOA; V
GE
= ±15 V; R
G
= 54
W
L = 100 µH; clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
V
CE
= 600 V; V
GE
= ±15 V;
R
G
= 54
W;
non-repetitive
(per IGBT)
(per IGBT)
T
VJ
= 125°C
t
SC
(SCSOA)
R
thJC
R
thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
10
2.75
0.9
µs
K/W
K/W
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
I
RM
t
rr
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 10 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 100 V; I
F
= 12 A
di
F
/dt = -100 A/µs
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 100°C
min.
Ratings
typ. max.
600
21
14
2.1
1.25
0.06
0.2
3.5
80
2.5
0.85
Unit
V
A
A
V
V
mA
mA
A
ns
K/W
K/W
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20090929b
© 2009 IXYS All rights reserved
3-5
MUBW20-06A6K
Input Rectifier Bridge D8 - D13
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Symbol
V
F
I
R
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. surge forward current
total power dissipation
Conditions
sine 180°
rectangular; d =
1
/
3
; bridge
t = 10 ms; sine 50 Hz
T
C
= 80°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
1600
23
65
250
65
V
A
A
A
W
Conditions
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Characteristic Values
min.
I
F
= 30 A
V
R
= V
RRM
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
0.65
typ.
1.1
1.2
0.4
1.9
max.
1.45
0.02
V
V
mA
mA
K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/85
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
Weight
Equivalent Circuits for Simulation
I
V
0
R
0
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.45
Ratings
typ. max.
4.7
3510
5.0
Unit
kW
K
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
2.2
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
(M4)
2.0
12.7
12.7
40
g
Symbol
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
Definitions
rectifier diode
IGBT
free wheeling diode
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
Ratings
typ. max.
0.90
12
1.0
70
1.25
13
1.4
150
1.25
26
Unit
V
mW
V
mW
V
mW
V
mW
V
mW
IGBT
free wheeling diode
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20090929b
© 2009 IXYS All rights reserved
4-5
MUBW20-06A6K
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
MUBW 20-06A6K
Marking on Product Delivering Mode Base Qty Ordering Code
MUBW20-06A6K
Box
10
500 103
IXYS reserves the right to change limits, test conditions and dimensions.
20090929b
© 2009 IXYS All rights reserved
5-5
Microchip MCU
