JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
LB123T
FEATURES
High voltage, high speed power switch
Switch regulators
PWM inverter and Motor controls
Solenoid and relay drivers
Deflection circuits
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
600
400
8
1
1.25
150
-55-150
Units
v
V
V
A
W
℃
℃
TRANSISTOR (NPN)
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain *
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage*
V
CE(sat)
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
V
V
V
I
C
=
1
mA, I
E
=0
I
C
=
10
mA, I
B
=0
I
E
=
1m
A, I
C
=0
V
CB
=
600
V, I
E
=0
V
EB
=8V, I
C
=0
V
CE
=
5
V, I
C
=
0.3A
V
CE
=
5
V, I
C
=
0.5
A
V
CE
=
5
V, I
C
=1A
I
C
=
100
mA, I
B
=
10
mA
I
C
=3
00
mA, I
B
=3
0
mA
I
C
=
100
mA, I
B
=
10
mA
I
C
=3
00
mA, I
B
=3
0
mA
600
400
8
10
10
10
10
6
μA
μA
50
0.8
0.9
1.2
V
V
V
V
Base-emitter saturation voltage*
V
BE(sat)
1.8
*pulse test: pulse width≤380μs, Duty cycle≤2%.
CLASSIFICATION OF h
FE(1)
Rank
B1
B2
B3
B4
Range
Marking
10-17
13-22
18-27
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
Typical Characteristics
LB123T
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