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LC05111C02MTTTG

Battery Management 1 CELL LIB PROTECTION IC

器件类别:电源/电源管理    电源电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
HVSON, SOLCC6,.16,25
制造商包装代码
511BZ
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
4 weeks
Samacsys Description
Battery Management 1 CELL LIB PROTECTION IC
可调阈值
NO
模拟集成电路 - 其他类型
POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码
R-PDSO-N6
JESD-609代码
e6
长度
3.8 mm
湿度敏感等级
3
信道数量
1
功能数量
1
端子数量
6
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
HVSON
封装等效代码
SOLCC6,.16,25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
2/5 V
认证状态
Not Qualified
座面最大高度
0.8 mm
最大供电电流 (Isup)
0.006 mA
最大供电电压 (Vsup)
4.3 V
最小供电电压 (Vsup)
2.6 V
标称供电电压 (Vsup)
3.7 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
NO LEAD
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
2.6 mm
文档预览
LC05111CMT
1-Cell Lithium-Ion Battery
Protection IC with
Integrated Power MOSFET
Overview
The LC05111CMT is a protection IC for 1−cell lithium−ion
secondary batteries with integrated power MOSFET. Also it integrates
highly accurate detection circuits and detection delay circuits to
prevent batteries from over−charging, over−discharging, over−current
discharging and over−current charging.
A battery protection system can be made by only LC05111CMT and
few external parts.
Features
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WDFN6 2.6x4.0, 0.65P,
DUAL FLAG
CASE 511BZ
Charge−and−discharge Power MOSFET are Integrated at
Ta = 25_C, V
CC
= 4.5 V
ON Resistance (total of charge and discharge) 11.2 mW (typ)
Highly Accurate Detection Voltage/Current at Ta = 25°C, V
CC
= 3.7 V
Over−charge Detection
±25
mV
Over−discharge Detection
±50
mV
Charge Over−current Detection
±0.7
A
Discharge Over−current Detection
±0.7
A
Delay Time for Detection and Release (fixed internally)
Discharge/Charge Over−current Detection is Compensated for
Temperature Dependency of Power FET
0 V Battery Charging
: “Permission”
Auto Wake−up Function Battery Charging: “Permission”
Over Charge Detection Voltage
: 4.0 V to 4.5 V (5 mV steps)
Over Charge Release Hysteresis
: 0 V to 0.3 V (100 mV steps)
Over Discharge Detection Voltage : 2.2 V to 2.7 V (50 mV steps)
Over Discharge Release Hysteresis at Auto Wake−up : 0 V to 0.6 V
(200 mV steps)
Over Discharge Release Hysteresis : 0 V to 0.075 V (25 mV steps)
Discharge Over Current Detection : 2.0 A to 8.0 A (0.5 A steps)
Charge Over Current Detection
:
−8.0
A to
−2.0
A (0.5 A steps)
MARKING DIAGRAM
XXXXX
AYWWG
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of
this data sheet.
Typical Applications
Lithium Ion Battery Protection
©
Semiconductor Components Industries, LLC, 2017
October, 2018
Rev. 9
1
Publication Order Number:
LC05111CMT/D
LC05111CMT
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C (Notes 1 and 2)
Parameter
Supply voltage
S1
S2 voltage
CS terminal Input voltage
Charge or discharge current
TST Input voltage
Storage temperature
Current between S1 and S2(DC)
Current between S1 and S2
(continuous pulse)
Operating ambient temperature
Allowable power dissipation
Junction temperature
Symbol
VCC
VS1−S2
CS
BAT−, PAC−
TST
Tstg
ID
IDP
Topr
Pd
Tj
Ratings
−0.3
to +12.0
24.0
VCC−24.0
10.0
−0.3
to +7.0
−55
to +125
10.0
35
−40
to +85
450
125
Unit
V
V
V
A
V
°C
A
A
°C
mW
°C
Glass epoxy four−layer board. Board
size 27.4 mm x 3.1 mm x 0.8 mm
VCC = 3.7 V
Pulse Width < 10
ms,
duty cycle < 1%
Conditions
Between PAC+ and VCC : R1 = 680
W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Absolute maximum ratings represent the values which cannot be exceeded at any given time.
2. If you intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it used
within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for
confirmation.
PAC+
R1
VCC
Controller IC
Battery
C1
TST
VSS
S1
S2
CS
R2
PAC−
Figure 1. Example of Application Circuit
Table 2.
Components
R1
R2
C1
Recommended Value
680
1k
0.1
m
Max
1k
2k
1.0
m
Unit
W
W
F
Description
3. We don’t guarantee the characteristics of the circuit shown above.
4. TST pin would be better to be connected to VSS pin, though it is connected to VSS with internal resistor (100 kW typ).
5. Battery voltage drop occurs, a current of about 60
mA
flow period of 1.5 V
1.3 V.
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2
LC05111CMT
Table 3. ELECTRICAL CHARACTERISTICS
Parameter
DETECTION VOLTAGE
Over−charge detection volt-
age
Over−charge release volt-
age
Over−discharge detection
voltage
Over−discharge release
voltage
Over−discharge release
voltage2
Discharge over−current
detection current
Vov
R1=680W
25°C
−30
to 70°C
Vovr
R1=680W
25°C
−30
to 70°C
Vuv
R1=680W
25°C
−30
to 70°C
Vuvr
R1=680W
CS=0V
R1=680W
CS=open
R2=1kW
25°C
−30
to 70°C
25°C
−30
to 70°C
25°C
V
CC
=3.7V
−30
to 70°C
V
CC
=2.6 to 4.3V
Discharge over−current
release current
Iocr
R2=1kW
25°C
V
CC
=3.7V
−30
to 70°C
V
CC
=2.6 to 4.3V
Discharge over−current de-
tection current(Short circuit)
Charge over−current detec-
tion current
Ioc2
Ioch
R2=1kW
R2=1kW
25°C
V
CC
=3.7V
25°C
V
CC
=3.7V
−30
to 70°C
V
CC
=2.6 to 4.3V
Charge over−current re-
lease current
Iochr
R2=1kW
25°C
V
CC
=3.7V
−30
to 70°C
V
CC
=2.6 to 4.3V
INPUT VOLTAGE
Operating Voltage for 0V
charging
CURRENT CONSUMPTION
Operating current
Stand−by current
Icc
Istb
At normal
state
At Stand−by
state
Auto wake−up
= enable
25°C
VCC=3.7V
25°C
VCC=2.0V
3
6
0.95
mA
mA
Vchg
V
CC
−CS
V
CC
−GND=0V
25°C
1.4
V
Vov_set
−25
Vov_set
−30
Vovr_set
−40
Vovr_set
−70
Vuv_set
−50
Vuv_set
−80
Vuvr_set
−100
Vuvr_set
−120
Vuvr2_set
−100
Vuvr2_set
−120
Ioc_set
−0.7
Ioc_set
−1.2
(Ioc_set−0.7)
(Ioc_set−1.2)
Ioc2_set*0.8
Ioch_set
−0.7
Ioch_set
−1.2
Ioch_set
−0.7
Ioch_set
−1.2
Vov_set
Vov_set
Vovr_set
Vovr_set
Vuv_set
Vuv_set
Vuvr_set
Vuvr_set
Vuvr2_set
Vuvr2_set
Ioc_set
Ioc_set
(Ioc_set)
(Ioc_set)
Ioc2_set
Ioch_set
Ioch_set
Ioch_set
Ioch_set
Vov_set +25
Vov_set +30
Vovr_set +40
Vovr_set +70
Vuv_set +50
Vuv_set +80
Vuvr_set +100
Vuvr_set +120
Vuvr2_set +100
Vuvr2_set +120
Ioc_set +0.7
Ioc_set +1.2
(Ioc_set+0.7)
oc_set+1.2)
Ioc2_set*1.2
Ioch_set +0.7
Ioch_set +1.2
Ioch_set +0.7
Ioch_set +1.2
A
A
A
A
A
mV
mV
mV
mV
mV
Symbol
Conditions
Min
Typ
Max
Unit
Vuvr2
Ioc
RESISTANCE
ON resistance 1 of integrat-
ed power MOSFET
ON resistance 2 of integrat-
ed power MOSFET
ON resistance 3 of integrat-
ed power MOSFET
ON resistance 4 of integrat-
ed power MOSFET
Ron1
Ron2
Ron3
Ron4
V
CC
=3.1V
I=±2.0A
V
CC
=3.7V
I=±2.0A
VCC=4.0V
I=±2.0A
V
CC
=4.5V
I=±2.0A
25°C
25°C
25°C
25°C
10.4
9.6
9.2
8.8
13
12
11.6
11.2
18.2
15.6
15
14
mW
mW
mW
mW
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3
LC05111CMT
Table 3. ELECTRICAL CHARACTERISTICS
Parameter
RESISTANCE
Internal resistance
(V
CC
−CS)
Internal resistance
(V
SS
−CS)
Rcsu
Rcsd
V
CC
=Vuv_set
CS=0V
V
CC
=3.7V
CS=0.1V
25°C
25°C
300
15
kW
kW
Symbol
Conditions
Min
Typ
Max
Unit
DETECTION AND RELEASE DELAY TIME
Over−charge detection de-
lay time
Over−charge release delay
time
Over−discharge detection
delay time
Over−discharge release de-
lay time
Discharge over−current
detection delay time 1
Discharge over−current
release delay time 1
Discharge over−current
detection delay time 2
(Short circuit)
Charge Over−current
detection delay time
Charge Over−current
release delay time
Tov
25°C
−30
to 70°C
Tovr
25°C
−30
to 70°C
Tuv
25°C
−30
to 70°C
Tuvr
25°C
−30
to 70°C
Toc1
V
CC
=3.7V
V
CC
=3.7V
V
CC
=3.7V
25°C
−30
to 70°C
Tocr1
25°C
−30
to 70°C
Toc2
25°C
−30
to 70°C
Toch
V
CC
=3.7V
V
CC
=3.7V
25°C
−30
to 70°C
Tochr
25°C
−30
to 70°C
0.8
0.6
12.8
9.6
16
12
0.9
0.6
9.6
7.2
3.2
2.4
280
180
12.8
9.6
3.2
2.4
1
1
16
16
20
20
1.1
1.1
12
12
4
4
400
400
16
16
4
4
1.2
1.5
19.2
24
24
30
1.3
1.5
14.4
18
4.8
6
560
800
19.2
24
4.8
6
ms
ms
ms
ms
ms
ms
ms
ms
sec
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
LC05111CMT
Table 4. SELECTION GUIDE
Device
LC05111C01MTTTG
LC05111C02MTTTG
LC05111C05MTTTG
LC05111C12MTTTG
LC05111C13MTTTG
LC05111C14MTTTG
LC05111C15MTTTG
LC05111C16MTTTG
LC05111C18MTTTG
LC05111C20MTTTG
LC05111C21MTTTG
LC05111C23MTTTG
Vov(V)
4.425
4.280
4.425
4.450
4.240
4.445
4.280
4.470
4.200
4.310
4.240
4.445
Vovr(V)
4.225
4.180
4.225
4.450
4.140
4.245
4.280
4.270
4.000
4.110
4.140
4.245
Vuv(V)
2.500
2.700
2.300
2.600
2.700
2.600
2.700
2.500
2.700
2.500
2.700
2.600
Vuvr(V)
2.500
2.700
2.300
2.600
2.700
2.600
2.700
2.500
2.750
2.500
2.700
2.600
Vuvr2(V)
2.900
2.900
2.700
3.000
2.900
3.000
3.100
2.900
2.900
2.900
2.900
3.000
AWUP
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
Ioc(A)
6.0
6.0
4.0
4.0
3.0
4.0
5.2
7.0
6.0
3.0
6.0
5.2
Ioch(A)
4.0
3.5
4.0
3.0
2.5
4.0
2.9
5.7
2.5
2.0
5.0
4.0
Ioc2(A)
17.5
21.5
17.5
15.0
15.0
17.5
17.5
17.5
17.5
15.0
17.5
17.5
0Vcharge
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
enable
Pdmax−Ta Graph
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参数对比
与LC05111C02MTTTG相近的元器件有:LC05111C05MTTTG。描述及对比如下:
型号 LC05111C02MTTTG LC05111C05MTTTG
描述 Battery Management 1 CELL LIB PROTECTION IC Battery Management 3 CELL LIB PROTECTION IC
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