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LF444CN

TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
DIP
包装说明
DIP-14
针数
14
Reach Compliance Code
_compli
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0001 µA
25C 时的最大偏置电流 (IIB)
0.0001 µA
最小共模抑制比
70 dB
标称共模抑制比
95 dB
频率补偿
YES
最大输入失调电压
12000 µV
JESD-30 代码
R-PDIP-T14
JESD-609代码
e0
长度
19.18 mm
低-偏置
YES
低-失调
NO
微功率
YES
湿度敏感等级
1
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
4
端子数量
14
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
包装方法
RAIL
峰值回流温度(摄氏度)
260
电源
+-15 V
认证状态
Not Qualified
座面最大高度
5.08 mm
标称压摆率
1 V/us
最大压摆率
1 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称均一增益带宽
1000 kHz
最小电压增益
15000
宽度
7.62 mm
Base Number Matches
1
文档预览
LF444 Quad Low Power JFET Input Operational Amplifier
May 1998
LF444
Quad Low Power JFET Input Operational Amplifier
General Description
The LF444 quad low power operational amplifier provides
many of the same AC characteristics as the industry stan-
dard LM148 while greatly improving the DC characteristics
of the LM148. The amplifier has the same bandwidth, slew
rate, and gain (10 kΩ load) as the LM148 and only draws
one fourth the supply current of the LM148. In addition the
well matched high voltage JFET input devices of the LF444
reduce the input bias and offset currents by a factor of
10,000 over the LM148. The LF444 also has a very low
equivalent input noise voltage for a low power amplifier.
The LF444 is pin compatible with the LM148 allowing an im-
mediate 4 times reduction in power drain in many applica-
tions. The LF444 should be used wherever low power dissi-
pation and good electrical characteristics are the major
considerations.
Features
n
n
n
n
n
⁄ supply current of a LM148: 200 µA/Amplifier (max)
Low input bias current: 50 pA (max)
High gain bandwidth: 1 MHz
High slew rate: 1 V/µs
Low noise voltage for low power
14
n
Low input noise current
n
High input impedance: 10
12
n
High gain V
O
=
±
10V, R
L
= 10k:
50k (min)
Simplified Schematic
1/4 Quad
Connection Diagram
Dual-In-Line Package
DS009156-2
DS009156-1
Ordering Information
LF444XYZ
X
indicates electrical grade
Y
indicates temperature range
“M” for military, “C” for commercial
Z
indicates package type “D”, “M” or “N”
Top View
Order Number LF444AMD, LF444CM,
LF444ACN, LF444CN or LF444MD/883
See NS Package Number D14E, M14A or N14A
BI-FET
and BI-FET II
are trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation
DS009156
www.national.com
Absolute Maximum Ratings
(Note 11)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 1)
Output Short Circuit
Duration (Note 2)
Power Dissipation
(Notes 3, 9)
T
j
max
θ
jA
(Typical)
LF444A
±
22V
±
38V
±
19V
Continuous
D Package
900 mW
150˚C
100˚C/W
LF444
±
18V
±
30V
±
15V
Continuous
Operating Temperature Range
Storage Temperature Range
ESD Tolerance (Note 10)
LF444A/LF444
(Note 4)
−65˚C
T
A
150˚C
Rating to
be determined
N, M Packages
670 mW
115˚C
85˚C/W
(Note 5)
Soldering Information
Dual-In-Line Packages
(Soldering, 10 sec.)
260˚C
Small Outline Package
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
DC Electrical Characteristics
Symbol
V
OS
Parameter
Input Offset Voltage
Conditions
Min
R
S
= 10k, T
A
= 25˚C
0˚C
T
A
+70˚C
−55˚C
T
A
+125˚C
R
S
= 10 kΩ
V
S
=
±
15V
(Notes 5, 6)
T
j
= 25˚C
T
j
= 70˚C
T
j
= 125˚C
T
j
= 25˚C
T
j
= 70˚C
T
j
= 125˚C
50
25
LF444A
Typ
2
Max
5
6.5
8
10
5
25
1.5
10
10
50
3
20
10
12
LF444
Min
Typ
3
Max
10
12
10
5
50
1.5
10
100
3
10
25
15
12
Units
mV
mV
mV
µV/˚C
pA
nA
nA
pA
nA
nA
V/mV
V/mV
∆V
OS
/∆T
I
OS
Average TC of Input
Offset Voltage
Input Offset Current
I
B
Input Bias Current
V
S
=
±
15V
(Notes 5, 6)
R
IN
A
VOL
Input Resistance
Large Signal Voltage
Gain
T
j
= 25˚C
V
S
=
±
15V, V
O
=
±
10V
R
L
= 10 kΩ, T
A
= 25˚C
Over Temperature
V
S
=
±
15V, R
L
= 10 kΩ
100
100
V
O
V
CM
CMRR
PSRR
I
S
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
±
12
±
16
80
80
±
13
+18
−17
100
100
0.6
0.8
±
12
±
11
70
70
±
13
+14
−12
95
90
0.6
1.0
V
V
V
dB
dB
mA
R
S
10 kΩ
(Note 7)
www.national.com
2
AC Electrical Characteristics
Symbol
Parameter
Amplifier-to-Amplifier
Coupling
SR
GBW
e
n
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
(Note 5)
Conditions
Min
LF444A
Typ
−120
Max
Min
LF444
Typ
−120
1
1
35
Max
dB
V/µs
MHz
Units
V
S
=
±
15V, T
A
= 25˚C
V
S
=
±
15V, T
A
= 25˚C
T
A
= 25˚C, R
S
= 100Ω,
f = 1 kHz
T
A
= 25˚C, f = 1 kHz
1
1
35
i
n
Equivalent Input Noise Current
0.01
0.01
Note 1:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 2:
Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 4:
The LF444A is available in both the commercial temperature range 0˚C
T
A
70˚C and the military temperature range −55˚C
T
A
125˚C. The LF444 is
available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A “C”
indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only.
Note 5:
Unless otherwise specified the specifications apply over the full temperature range and for V
S
=
±
20V for the LF444A and for V
S
=
±
15V for the LF444. V
OS
,
I
B
, and I
OS
are measured at V
CM
= 0.
Note 6:
The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
j
. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, P
D
. T
j
= T
A
+
θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 7:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
±
15V to
±
5V for the LF444 and from
±
20V to
±
5V for the LF444A.
Note 8:
Refer to RETS444X for LF444MD military specifications.
Note 9:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Note 10:
Human body model, 1.5 kΩ in series with 100 pF.
Note 11:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
Supply Current
DS009156-12
DS009156-13
DS009156-14
3
www.national.com
Typical Performance Characteristics
Positive Common-Mode
Input Voltage Limit
(Continued)
Negative Common-Mode
Input Voltage Limit
Positive Current Limit
DS009156-17
DS009156-15
DS009156-16
Negative Current Limit
Output Voltage Swing
Output Voltage Swing
DS009156-18
DS009156-19
DS009156-20
Gain Bandwidth
Bode Plot
Slew Rate
DS009156-21
DS009156-22
DS009156-23
www.national.com
4
Typical Performance Characteristics
Distortion vs Frequency
(Continued)
Undistorted Output
Voltage Swing
Open Loop
Frequency Response
DS009156-24
DS009156-25
DS009156-26
Common-Mode
Rejection Ratio
Power Supply
Rejection Ratio
Equivalent Input
Noise Voltage
DS009156-27
DS009156-28
DS009156-29
Open Loop Voltage Gain
Output Impedance
Inverter Settling Time
DS009156-30
DS009156-31
DS009156-32
5
www.national.com
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参数对比
与LF444CN相近的元器件有:LF444、LF444ACN、LF444AMD、LF444CM、LF444MD/883。描述及对比如下:
型号 LF444CN LF444 LF444ACN LF444AMD LF444CM LF444MD/883
描述 TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14 TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14 TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14 TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14 TEXAS INSTRUMENTS - LF444CM - IC; OP-AMP; 1MHZ; 1V/ us; SOIC-14 QUAD OP-AMP, 10000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP14
是否Rohs认证 不符合 - 不符合 不符合 不符合 不符合
零件包装代码 DIP - DIP DIP SOIC DIP
包装说明 DIP-14 - DIP-14 DIP, DIP14,.3 PLASTIC, SOP-14 DIP, DIP14,.3
针数 14 - 14 14 14 14
Reach Compliance Code _compli - not_compliant unknown _compli compliant
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0001 µA - 0.00005 µA 0.00005 µA 0.0001 µA 0.0001 µA
25C 时的最大偏置电流 (IIB) 0.0001 µA - 0.00005 µA 0.00005 µA 0.0001 µA 0.0001 µA
最小共模抑制比 70 dB - 80 dB 80 dB 70 dB -
标称共模抑制比 95 dB - 100 dB 100 dB 95 dB 95 dB
频率补偿 YES - YES YES YES YES
最大输入失调电压 12000 µV - 6500 µV 8000 µV 12000 µV 10000 µV
JESD-30 代码 R-PDIP-T14 - R-PDIP-T14 R-CDIP-T14 R-PDSO-G14 R-CDIP-T14
JESD-609代码 e0 - e0 e0 e0 e0
长度 19.18 mm - 19.18 mm - 8.65 mm 19.304 mm
低-偏置 YES - YES YES YES YES
低-失调 NO - NO NO NO NO
微功率 YES - YES YES YES YES
湿度敏感等级 1 - 1 - 1 1
负供电电压上限 -18 V - -22 V -22 V -18 V -18 V
标称负供电电压 (Vsup) -15 V - -20 V -20 V -15 V -15 V
功能数量 4 - 4 4 4 4
端子数量 14 - 14 14 14 14
最高工作温度 70 °C - 70 °C 125 °C 70 °C 125 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
封装代码 DIP - DIP DIP SOP DIP
封装等效代码 DIP14,.3 - DIP14,.3 DIP14,.3 SOP14,.25 DIP14,.3
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE - IN-LINE IN-LINE SMALL OUTLINE IN-LINE
包装方法 RAIL - RAIL - RAIL RAIL
峰值回流温度(摄氏度) 260 - 260 NOT SPECIFIED 235 260
电源 +-15 V - +-15 V +-15 V +-15 V +-15 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm - 5.08 mm 4.572 mm 1.75 mm 4.572 mm
标称压摆率 1 V/us - 1 V/us 1 V/us 1 V/us 1 V/us
最大压摆率 1 mA - 0.8 mA 1 mA 1 mA 1 mA
供电电压上限 18 V - 22 V 22 V 18 V 18 V
标称供电电压 (Vsup) 15 V - 20 V 20 V 15 V 15 V
表面贴装 NO - NO NO YES NO
技术 BIPOLAR - BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL - COMMERCIAL MILITARY COMMERCIAL MILITARY
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 2.54 mm - 2.54 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL - DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 - 40 NOT SPECIFIED 30 40
标称均一增益带宽 1000 kHz - 1000 kHz 1000 kHz 1000 kHz 1000 kHz
最小电压增益 15000 - 25000 25000 15000 15000
宽度 7.62 mm - 7.62 mm 7.62 mm 3.9 mm 7.62 mm
厂商名称 - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
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