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LM158AMD8

IC,OP-AMP,DUAL,BIPOLAR,DIE

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
, DIE OR CHIP
Reach Compliance Code
compliant
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB)
0.05 µA
频率补偿
YES
最大输入失调电压
4000 µV
低-失调
NO
湿度敏感等级
1
功能数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
封装等效代码
DIE OR CHIP
电源
+-1.5/+-15/3/30 V
认证状态
Not Qualified
筛选级别
MIL-STD-883 Class B (Modified)
最大压摆率
2 mA
供电电压上限
16 V
技术
BIPOLAR
温度等级
MILITARY
标称均一增益带宽
1000 kHz
最小电压增益
25000
Base Number Matches
1
文档预览
LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers
March 2002
LM158/LM258/LM358/LM2904
Low Power Dual Operational Amplifiers
General Description
The LM158 series consists of two independent, high gain,
internally frequency compensated operational amplifiers
which were designed specifically to operate from a single
power supply over a wide range of voltages. Operation from
split power supplies is also possible and the low power
supply current drain is independent of the magnitude of the
power supply voltage.
Application areas include transducer amplifiers, dc gain
blocks and all the conventional op amp circuits which now
can be more easily implemented in single power supply
systems. For example, the LM158 series can be directly
operated off of the standard +5V power supply voltage which
is used in digital systems and will easily provide the required
interface electronics without requiring the additional
±
15V
power supplies.
The LM358 and LM2904 are available in a chip sized pack-
age (8-Bump micro SMD) using National’s micro SMD pack-
age technology.
Advantages
n
Two internally compensated op amps
n
Eliminates need for dual supplies
n
Allows direct sensing near GND and V
OUT
also goes to
GND
n
Compatible with all forms of logic
n
Power drain suitable for battery operation
n
Pin-out same as LM1558/LM1458 dual op amp
Features
n
Available in 8-Bump micro SMD chip sized package,
(See AN-1112)
n
Internally frequency compensated for unity gain
n
Large dc voltage gain: 100 dB
n
Wide bandwidth (unity gain): 1 MHz
(temperature compensated)
n
Wide power supply range:
— Single supply: 3V to 32V
— or dual supplies:
±
1.5V to
±
16V
n
Very low supply current drain (500 µA) — essentially
independent of supply voltage
n
Low input offset voltage: 2 mV
n
Input common-mode voltage range includes ground
n
Differential input voltage range equal to the power
supply voltage
n
Large output voltage swing: 0V to V
+
− 1.5V
Unique Characteristics
n
In the linear mode the input common-mode voltage
range includes ground and the output voltage can also
swing to ground, even though operated from only a
single power supply voltage.
n
The unity gain cross frequency is temperature
compensated.
n
The input bias current is also temperature compensated.
Voltage Controlled Oscillator (VCO)
00778723
© 2002 National Semiconductor Corporation
DS007787
www.national.com
LM158/LM258/LM358/LM2904
Absolute Maximum Ratings
(Note 9)
Distributors for availability and specifications.
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
LM158/LM258/LM358
LM158A/LM258A/LM358A
Supply Voltage, V
+
Differential Input Voltage
Input Voltage
Power Dissipation (Note 1)
Molded DIP
Metal Can
Small Outline Package (M)
micro SMD
Output Short-Circuit to GND
(One Amplifier) (Note 2)
V
+
15V and T
A
= 25˚C
Input Current (V
IN
<
−0.3V) (Note 3)
Operating Temperature Range
LM358
LM258
LM158
Storage Temperature Range
Lead Temperature, DIP
(Soldering, 10 seconds)
Lead Temperature, Metal Can
(Soldering, 10 seconds)
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
215˚C
220˚C
215˚C
220˚C
260˚C
260˚C
300˚C
300˚C
260˚C
260˚C
0˚C to +70˚C
−25˚C to +85˚C
−55˚C to +125˚C
−65˚C to +150˚C
−65˚C to +150˚C
−40˚C to +85˚C
Continuous
50 mA
Continuous
50 mA
830 mW
550 mW
530 mW
435mW
530 mW
830 mW
32V
32V
−0.3V to +32V
26V
26V
−0.3V to +26V
LM2904
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 10)
250V
250V
Electrical Characteristics
V
+
= +5.0V, unless otherwise stated
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common-Mode
Voltage Range
Supply Current
Conditions
(Note 5), T
A
= 25˚C
I
IN(+)
or I
IN(−)
, T
A
= 25˚C,
V
CM
= 0V, (Note 6)
I
IN(+)
− I
IN(−)
, V
CM
= 0V, T
A
= 25˚C
V = 30V, (Note 7)
(LM2904, V = 26V), T
A
= 25˚C
Over Full Temperature Range
R
L
=
on All Op Amps
V
+
= 30V (LM2904 V
+
= 26V)
V = 5V
+
+
+
LM158A
Min Typ
1
20
2
0
Max
2
50
10
V −1.5
+
LM358A
Min Typ
2
45
5
0
Max
3
100
30
V −1.5
+
LM158/LM258
Min Typ
2
45
3
0
Max
5
150
30
V −1.5
+
Units
mV
nA
nA
V
1
0.5
2
1.2
1
0.5
2
1.2
1
0.5
2
1.2
mA
mA
www.national.com
2
LM158/LM258/LM358/LM2904
Electrical Characteristics
V
+
= +5.0V, unless otherwise stated
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common-Mode
Voltage Range
Supply Current
Conditions
Min
(Note 5) , T
A
= 25˚C
I
IN(+)
or I
IN(−)
, T
A
= 25˚C,
V
CM
= 0V, (Note 6)
I
IN(+)
− I
IN(−)
, V
CM
= 0V, T
A
= 25˚C
V = 30V, (Note 7)
(LM2904, V
+
= 26V), T
A
= 25˚C
Over Full Temperature Range
R
L
=
on All Op Amps
V
+
= 30V (LM2904 V
+
= 26V)
V = 5V
+
+
LM358
Typ
2
45
5
0
Max
7
250
50
V −1.5
+
LM2904
Min
Typ
2
45
5
0
Max
7
250
50
V −1.5
+
Units
mV
nA
nA
V
1
0.5
2
1.2
1
0.5
2
1.2
mA
mA
Electrical Characteristics
V
+
= +5.0V, (Note 4), unless otherwise stated
Parameter
Large Signal Voltage
Gain
Common-Mode
Rejection Ratio
Power Supply
Rejection Ratio
Amplifier-to-Amplifier
Coupling
Output Current
Conditions
V
+
= 15V, T
A
= 25˚C,
R
L
2 kΩ, (For V
O
= 1V
to 11V)
T
A
= 25˚C,
V
CM
= 0V to V
+
−1.5V
V
+
= 5V to 30V
(LM2904, V
+
= 5V
to 26V), T
A
= 25˚C
f = 1 kHz to 20 kHz, T
A
= 25˚C
(Input Referred), (Note 8)
Source V
IN+
= 1V,
V
IN−
= 0V,
V
+
= 15V,
V
O
= 2V, T
A
= 25˚C
Sink V
IN−
= 1V, V
IN+
= 0V
V
+
= 15V, T
A
= 25˚C,
V
O
= 2V
V
IN−
= 1V,
V
IN+
= 0V
T
A
= 25˚C, V
O
= 200 mV,
V
+
= 15V
Short Circuit to Ground
Input Offset Voltage
Input Offset Voltage
Drift
Input Offset Current
Input Offset Current
Drift
Input Bias Current
Input Common-Mode
Voltage Range
I
IN(+)
or I
IN(−)
V
+
= 30 V, (Note 7)
(LM2904, V = 26V)
+
LM158A
Min Typ
50
100
Max
LM358A
Min Typ
25
100
Max
LM158/LM258
Min Typ
50
100
Max
Units
V/mV
70
85
65
85
70
85
dB
65
100
65
100
65
100
dB
−120
−120
−120
dB
20
40
20
40
20
40
mA
10
20
10
20
10
20
mA
12
50
12
50
12
50
µA
T
A
= 25˚C, (Note 2),
V
+
= 15V
(Note 5)
R
S
= 0Ω
I
IN(+)
− I
IN(−)
R
S
= 0Ω
40
60
4
40
60
5
40
60
7
mA
mV
µV/˚C
7
15
30
7
20
75
7
100
10
40
0
300
V
+
−2
nA
pA/˚C
nA
V
10
40
0
200
100
V
+
−2
0
10
40
300
200
V
+
−2
3
www.national.com
LM158/LM258/LM358/LM2904
Electrical Characteristics
+
(Continued)
V = +5.0V, (Note 4), unless otherwise stated
Parameter
Conditions
V = +15V
(V
O
= 1V to 11V)
R
L
2 kΩ
V
OH
V
+
= +30V
(LM2904, V
+
= 26V)
V
OL
V = 5V, R
L
= 10 kΩ
Source V
IN+
= +1V, V
IN−
= 0V,
V
+
= 15V, V
O
= 2V
Sink V
IN−
= +1V, V
IN+
= 0V,
V
+
= 15V, V
O
= 2V
10
10
+
+
LM158A
Min Typ
25
Max
LM358A
Min Typ
15
26
Max
LM158/LM258
Min Typ
25
26
Max
Units
Large Signal Voltage
Gain
Output
Voltage
Swing
Output Current
V/mV
V
28
5
20
V
mV
mA
mA
R
L
= 2 kΩ
R
L
= 10 kΩ
26
27
28
5
20
15
20
27
28
5
20
27
10
5
20
8
10
5
20
8
Electrical Characteristics
V
+
= +5.0V, (Note 4), unless otherwise stated
Parameter
Large Signal Voltage
Gain
Common-Mode
Rejection Ratio
Power Supply
Rejection Ratio
Amplifier-to-Amplifier
Coupling
Output Current
+
Conditions
V = 15V, T
A
= 25˚C,
R
L
2 kΩ, (For V
O
= 1V
to 11V)
T
A
= 25˚C,
V
CM
= 0V to V
+
−1.5V
V
+
= 5V to 30V
(LM2904, V
+
= 5V
to 26V), T
A
= 25˚C
f = 1 kHz to 20 kHz, T
A
= 25˚C
(Input Referred), (Note 8)
Source V
IN+
= 1V,
V
IN−
= 0V,
V
+
= 15V,
V
O
= 2V, T
A
= 25˚C
Sink V
IN−
= 1V, V
IN+
= 0V
V
+
= 15V, T
A
= 25˚C,
V
O
= 2V
V
IN−
= 1V,
V
IN+
= 0V
T
A
= 25˚C, V
O
= 200 mV,
V
+
= 15V
LM358
Min
25
Typ
100
Max
Min
25
LM2904
Typ
100
Max
Units
V/mV
65
85
50
70
dB
65
100
50
100
dB
−120
−120
dB
20
40
20
40
mA
10
20
10
20
mA
12
50
12
50
µA
Short Circuit to Ground
Input Offset Voltage
Input Offset Voltage
Drift
Input Offset Current
Input Offset Current
Drift
Input Bias Current
Input Common-Mode
Voltage Range
T
A
= 25˚C, (Note 2),
V
+
= 15V
(Note 5)
R
S
= 0Ω
I
IN(+)
− I
IN(−)
R
S
= 0Ω
I
IN(+)
or I
IN(−)
V = 30 V, (Note 7)
(LM2904, V
+
= 26V)
+
40
60
9
40
60
10
mA
mV
µV/˚C
7
150
10
40
0
500
V
+
−2
0
7
45
10
40
500
V
+
−2
200
nA
pA/˚C
nA
V
www.national.com
4
LM158/LM258/LM358/LM2904
Electrical Characteristics
+
(Continued)
V = +5.0V, (Note 4), unless otherwise stated
Parameter
Conditions
V = +15V
(V
O
= 1V to 11V)
R
L
2 kΩ
V
OH
V
+
= +30V
(LM2904, V
+
= 26V)
V
OL
V = 5V, R
L
= 10 kΩ
Source V
IN+
= +1V, V
IN−
= 0V,
V
+
= 15V, V
O
= 2V
Sink V
IN−
= +1V, V
IN+
= 0V,
V
+
= 15V, V
O
= 2V
10
5
+
+
LM358
Min
15
Typ
Max
Min
15
22
28
5
20
8
20
10
5
23
LM2904
Typ
Max
Units
Large Signal Voltage
Gain
Output
Voltage
Swing
Output Current
V/mV
V
24
5
20
8
100
V
mV
mA
mA
R
L
= 2 kΩ
R
L
= 10 kΩ
26
27
Note 1:
For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a +125˚C maximum junction temperature and a thermal
resistance of 120˚C/W for MDIP, 182˚C/W for Metal Can, 189˚C/W for Small Outline package, and 230˚C/W for micro SMD, which applies for the device soldered
in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be derated based on a +150˚C maximum junction temperature.
The dissipation is the total of both amplifiers — use external resistors, where possible, to allow the amplifier to saturate or to reduce the power which is dissipated
in the integrated circuit.
Note 2:
Short circuits from the output to V
+
can cause excessive heating and eventual destruction. When considering short cirucits to ground, the maximum output
current is approximately 40 mA independent of the magnitude of V
+
. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 3:
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V
+
voltage level (or to ground for a large overdrive) for the time duration
that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value
greater than −0.3V (at 25˚C).
Note 4:
These specifications are limited to −55˚C
T
A
+125˚C for the LM158/LM158A. With the LM258/LM258A, all temperature specifications are limited to
−25˚C
T
A
+85˚C, the LM358/LM358A temperature specifications are limited to 0˚C
T
A
+70˚C, and the LM2904 specifications are limited to −40˚C
T
A
+85˚C.
Note 5:
V
O
.
1.4V, R
S
= 0Ω with V
+
from 5V to 30V; and over the full input common-mode range (0V to V
+
−1.5V) at 25˚C. For LM2904, V
+
from 5V to 26V.
Note 6:
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so
no loading change exists on the input lines.
Note 7:
The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25˚C). The upper end of the
common-mode voltage range is V
+
−1.5V (at 25˚C), but either or both inputs can go to +32V without damage (+26V for LM2904), independent of the magnitude of
V
+
.
Note 8:
Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This typically can be
detected as this type of capacitance increases at higher frequencies.
Note 9:
Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
Note 10:
Human body model, 1.5 kΩ in series with 100 pF.
5
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参数对比
与LM158AMD8相近的元器件有:LM158MD8、LM2904MWA、LM2904MWC、LM358MWA、LM358MDA、LM158AH-MLS。描述及对比如下:
型号 LM158AMD8 LM158MD8 LM2904MWA LM2904MWC LM358MWA LM358MDA LM158AH-MLS
描述 IC,OP-AMP,DUAL,BIPOLAR,DIE IC DUAL OP-AMP, 7000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, DIE, Operational Amplifier IC,OP-AMP,DUAL,BIPOLAR,WAFER IC DUAL OP-AMP, 10000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, WAFER, Operational Amplifier IC DUAL OP-AMP, 9000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, WAFER, Operational Amplifier IC DUAL OP-AMP, 9000 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC, DIE, Operational Amplifier IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
是否Rohs认证 符合 符合 符合 符合 符合 符合 不符合
包装说明 , DIE OR CHIP DIE, DIE OR CHIP , WAFER DIE, WAFER , WAFER DIE, DIE OR CHIP TO-5, CAN8,.2
Reach Compliance Code compliant compliant compliant compliant compliant compliant unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB) 0.05 µA 0.05 µA 0.25 µA 0.25 µA 0.25 µA 0.25 µA 0.05 µA
频率补偿 YES YES YES YES YES YES YES
最大输入失调电压 4000 µV 7000 µV 10000 µV 10000 µV 9000 µV 9000 µV 4000 µV
低-失调 NO NO NO NO NO NO NO
功能数量 2 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 85 °C 85 °C 70 °C 70 °C 125 °C
最低工作温度 -55 °C -55 °C -40 °C -40 °C - - -55 °C
封装等效代码 DIE OR CHIP DIE OR CHIP WAFER WAFER WAFER DIE OR CHIP CAN8,.2
电源 +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V +-1.5/+-13/3/26 V +-1.5/+-13/3/26 V +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大压摆率 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA
供电电压上限 16 V 32 V 13 V 26 V 32 V 32 V 32 V
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL MILITARY
最小电压增益 25000 25000 15000 15000 15000 15000 25000
湿度敏感等级 1 1 1 1 1 1 -
标称均一增益带宽 1000 kHz 1000 kHz - 1000 kHz 1000 kHz 1000 kHz 1000 kHz
零件包装代码 - WAFER - WAFER WAFER WAFER BCY
ECCN代码 - EAR99 - EAR99 EAR99 EAR99 EAR99
最大平均偏置电流 (IIB) - 0.3 µA - 0.5 µA 0.5 µA 0.5 µA 0.1 µA
标称共模抑制比 - 85 dB - 70 dB 85 dB 85 dB 85 dB
JESD-30 代码 - X-XUUC-N - X-XUUC-N X-XUUC-N X-XUUC-N O-MBCY-W8
封装主体材料 - UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED METAL
封装代码 - DIE - DIE - DIE TO-5
封装形状 - UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED ROUND
封装形式 - UNCASED CHIP - UNCASED CHIP UNCASED CHIP UNCASED CHIP CYLINDRICAL
峰值回流温度(摄氏度) - 260 - 260 260 260 NOT SPECIFIED
标称压摆率 - 0.5 V/us - 0.1 V/us 0.1 V/us 0.1 V/us 0.5 V/us
标称供电电压 (Vsup) - 5 V - 5 V 5 V 5 V 5 V
表面贴装 - YES - YES YES YES NO
端子形式 - NO LEAD - NO LEAD NO LEAD NO LEAD WIRE
端子位置 - UPPER - UPPER UPPER UPPER BOTTOM
处于峰值回流温度下的最长时间 - 40 - 40 40 40 NOT SPECIFIED
厂商名称 - - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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