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LM358MX

IC OPAMP GP 8SOIC

器件类别:模拟混合信号IC    放大器电路   

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厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SOP, SOP8,.25
制造商包装代码
751EB
Reach Compliance Code
compliant
ECCN代码
EAR99
Samacsys Description
ON SEMICONDUCTOR - LM358MX. - OP AMP, 0.6V/uS, SOIC-8, FULL REEL
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.5 µA
25C 时的最大偏置电流 (IIB)
0.25 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
9000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.92 mm
低-失调
NO
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-1.5/+-15/3/30 V
认证状态
Not Qualified
座面最大高度
1.8 mm
最大压摆率
2 mA
供电电压上限
32 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin (Sn)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最小电压增益
15000
宽度
3.95 mm
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Please
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LM2904,LM358/LM358A,LM258/
LM258A
Dual Operational Amplifier
Features
• Internally Frequency Compensated for Unity Gain
• Large DC Voltage Gain: 100dB
• Wide Power Supply Range:
LM258/LM258A, LM358/LM358A: 3V~32V (or ±1.5V
~ 16V)
LM2904 : 3V~26V (or ±1.5V ~ 13V)
• Input Common Mode Voltage Range Includes Ground
• Large Output Voltage Swing: 0V DC to Vcc -1.5V DC
• Power Drain Suitable for Battery Operation.
Description
The LM2904,LM358/LM358A, LM258/LM258A consist of
two independent, high gain, internally frequency
compensated operational amplifiers which were designed
specifically to operate from a single power supply over a
wide range of voltage. Operation from split power supplies
is also possible and the low power supply current drain is
independent of the magnitude of the power supply voltage.
Application areas include transducer amplifier, DC gain
blocks and all the conventional OP-AMP circuits which now
can be easily implemented in single power supply systems.
8-DIP
1
8-SOP
1
Internal Block Diagram
OUT1
1
8
V
CC
IN1 (-)
2
-
+
7
6
OUT2
IN2 (-)
IN1 (+)
3
-
+
GND
4
5
IN2 (+)
Rev. 1.0.3
©2010 Fairchild Semiconductor Corporation
LM2904,LM358/LM358A,LM258/LM258A
Schematic Diagram
(One section only)
V
CC
Q5
Q6
Q12
Q17
Q19
Q20
Q2
IN(-)
Q1
R2
IN(+)
Q11
Q21
Q15
Q7
Q8
Q9
Q10
Q13
Q14
Q16
OUTPUT
Q3
Q4
C1
Q18
R1
GND
Absolute Maximum Ratings
Parameter
Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit to GND
V
CC
≤15V,
T
A
= 25°C(One Amp)
Operating Temperature Range
Maximun Junction Temperature
Storage Temperature Range
Symbol
V
CC
V
I(DIFF)
V
I
-
T
OPR
T
J(MAX)
T
STG
LM258/LM258A
±16
or 32
32
-0.3 to +32
Continuous
-25 ~ +85
+150
-65 ~ +150
LM358/LM358A
±16
or 32
32
-0.3 to +32
Continuous
0 ~ +70
+150
-65 ~ +150
LM2904
±13
or 26
26
-0.3 to +26
Continuous
-40 ~ +85
+150
-65 ~ +150
Unit
V
V
V
-
°C
°C
°C
2
LM2904,LM358/LM358A,LM258/LM258A
Electrical Characteristics
(V
CC
= 5.0V, V
EE
= GND, T
A
= 25°C, unless otherwise specified)
Parameter
Symbol
Conditions
V
CM
= 0V to V
CC
-1.5V
V
O(P)
= 1.4V,
R
S
= 0Ω
-
-
V
CC
= 30V
(LM2904, V
CC
=26V)
R
L
=
∞,
V
CC
= 30V
(LM2904, V
CC
=26V)
R
L
=
∞,
V
CC
= 5V
V
CC
= 15V,
R
L
=
2kΩ
V
O(P)
= 1V to 11V
LM258
LM358
LM2904
Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
-
2.9
5.0
-
2.9
7.0
-
2.9
7.0
Input Offset
Voltage
Input Offset
Current
Input Bias
Current
Input Voltage
Range
V
IO
mV
I
IO
I
BIAS
V
I(R)
-
-
0
-
-
50
3
45
-
0.8
0.5
100
-
28
5
85
100
120
40
30
150
V
CC
-1.5
2.0
1.2
-
-
-
20
-
-
-
60
-
-
0
-
-
25
26
27
-
65
65
-
-
5
45
-
0.8
0.5
100
-
28
5
80
100
120
40
50
250
V
CC
-1.5
2.0
1.2
-
-
-
20
-
-
-
60
-
-
0
-
-
25
22
23
5
45
-
0.8
0.5
100
-
24
5
50
250
V
CC
-1.5
2.0
1.2
-
-
-
20
-
-
-
60
nA
nA
V
mA
mA
V/mV
V
V
mV
dB
dB
dB
mA
Supply Current
Large Signal
Voltage Gain
I
CC
G
V
V
O(H)
Output Voltage
Swing
V
O(L)
Common-Mode
Rejection Ratio
Power Supply
Rejection Ratio
Channel
Separation
Short Circuit to
GND
CMRR
PSRR
CS
I
SC
V
CC
=30V R
L
= 2kΩ 26
(V
CC
R
L
=
=26V for
27
10kΩ
LM2904)
V
CC
= 5V, R
L
=
10kΩ
-
-
f = 1kHz to 20kHz
(Note1)
-
-
70
65
-
-
50
50
-
-
80
100
120
40
V
I(+)
= 1V,
V
I(-)
= 0V,
I
SOURCE
V
CC
= 15V,
V
O(P)
= 2V
Output Current
I
SINK
V
I(+)
= 0V, V
I(-)
= 1V,
V
CC
= 15V,
V
O(P)
= 2V
V
I(+)
= 0V,V
I(-)
=1V ,
V
CC
= 15V,
V
O(P)
= 200mV
-
20
30
-
20
30
-
20
30
-
mA
10
15
-
10
15
-
10
15
-
mA
12
-
100
-
-
V
CC
12
-
100
-
-
V
CC
-
-
-
-
-
V
CC
μA
V
Differential
Input Voltage
V
I(DIFF)
Note:
1. This parameter, although guaranteed, is not 100% tested in production.
3
LM2904,LM358/LM358A,LM258/LM258A
Electrical Characteristics
(Continued)
(V
CC
= 5.0V, V
EE
= GND, unless otherwise specified)
The following specification apply over the range of -25°C
T
A
+85°C for the LM258; and the 0°C
T
A
+70°C
for the LM358; and the -40°C
T
A
+85°C for the LM2904
Parameter
Symbol
Conditions
V
CM
= 0V to
V
CC
-1.5V
V
O(P)
= 1.4V,
R
S
= 0Ω
R
S
= 0Ω
-
-
-
V
CC
= 30V
(LM2904 , V
CC
= 26V)
V
CC
= 15V,
R
L
=2.0kΩ
V
O(P)
= 1V to 11V
V
CC
=30V
(V
CC
=
26V for
LM2904)
R
L
= 2kΩ
R
L
=10kΩ
LM258
LM358
LM2904
Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
-
-
7.0
-
-
9.0
-
-
10.0
Input Offset
Voltage
Input Offset
Voltage Drift
Input Offset
Current
Input Offset
Current Drift
Input Bias
Current
Input Voltage
Range
Large Signal
Voltage Gain
V
IO
mV
ΔV
IO/
Δ
T
I
IO
ΔI
IO
/ΔT
I
BIAS
V
I(R)
G
V
-
-
-
-
0
25
26
27
-
10
7.0
-
10
40
-
-
-
28
5
30
-
100
-
300
V
CC
-2.0
-
-
-
20
-
-
-
-
-
0
15
26
27
-
10
7.0
-
10
40
-
-
-
28
5
30
-
150
-
500
V
CC
-2.0
-
-
-
20
-
-
-
-
-
0
15
22
23
-
10
7.0
45
10
40
-
-
-
24
5
30
-
200
-
500
V
CC
-2.0
-
-
-
20
-
μV/°C
nA
pA/°C
nA
V
V/mV
V
V
mV
mA
Output Voltage
Swing
V
O(H)
V
O(L)
V
CC
= 5V, R
L
=10kΩ
Output Current
V
I(+)
= 1V,
V
I(-)
= 0V,
I
SOURCE
V
CC
= 15V,
V
O(P)
= 2V
I
SINK
V
I(+)
= 0V,
V
I(-)
= 1V,
V
CC
= 15V,
V
O(P)
= 2V
-
5
8
-
5
9
-
5
9
-
mA
Differential
Input Voltage
V
I(DIFF)
-
-
V
CC
-
-
V
CC
-
-
V
CC
V
4
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参数对比
与LM358MX相近的元器件有:LM358AM、LM358AMX、LM2904M、LM358M、LM258AM、LM358N。描述及对比如下:
型号 LM358MX LM358AM LM358AMX LM2904M LM358M LM258AM LM358N
描述 IC OPAMP GP 8SOIC Operational Amplifiers - Op Amps Dual Operational Amp Operational Amplifiers - Op Amps Dual OP amp Operational Amplifier, Single Supply, Dual, 8100-TUBE IC OPAMP GP 8SOIC IC OPAMP GP 8SOIC 增益带宽积(GBP):1MHz 放大器组数:2 运放类型:General Purpose 各通道功耗:- 压摆率(SR):0.6 V/us 电源电压:3V ~ 32V, ±1.5V ~ 16V
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
包装说明 SOP, SOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25 SOP-8 SOP, SOP8,.25 SOP-8 DIP-8
制造商包装代码 751EB 751EB 751EB 751EB 751EB 751EB 626-05
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.5 µA 0.2 µA 0.2 µA 0.5 µA 0.5 µA 0.1 µA 0.5 µA
25C 时的最大偏置电流 (IIB) 0.25 µA 0.1 µA 0.1 µA 0.25 µA 0.25 µA 0.08 µA 0.25 µA
标称共模抑制比 80 dB 85 dB 85 dB 80 dB 80 dB 85 dB 80 dB
频率补偿 YES NO YES NO NO NO NO
最大输入失调电压 9000 µV 5000 µV 5000 µV 10000 µV 9000 µV 4000 µV 7000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e3 e3 e3 e3 e3 e4 e3
长度 4.92 mm 4.92 mm 4.92 mm 4.92 mm 4.92 mm 4.92 mm 9.78 mm
低-失调 NO NO NO NO NO NO NO
功能数量 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8
最高工作温度 70 °C 70 °C 70 °C 85 °C 70 °C 85 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP SOP SOP DIP
封装等效代码 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.8 mm 1.8 mm 1.8 mm 1.8 mm 1.8 mm 1.8 mm 4.45 mm
最大压摆率 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 3 mA
供电电压上限 32 V 32 V 32 V 26 V 32 V 32 V 32 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL OTHER COMMERCIAL
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) TIN Tin (Sn) Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) Matte Tin (Sn) - annealed
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最小电压增益 15000 15000 15000 15000 15000 25000 15000
宽度 3.95 mm 3.95 mm 3.95 mm 3.95 mm 3.95 mm 3.95 mm 7.62 mm
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
Samacsys Description ON SEMICONDUCTOR - LM358MX. - OP AMP, 0.6V/uS, SOIC-8, FULL REEL Dual Operational Amplifier LM358AMX, Operational Amplifier Transducer, R-R, 3 to 32V, 8-Pin SOP OBSOLETE LM358M ON Semiconductor, Op Amp, 5 → 28 V, 8-Pin SOIC - -
湿度敏感等级 1 1 1 1 1 1 -
电源 +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V - +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V +-1.5/+-15/3/30 V
最小共模抑制比 - 65 dB - 50 dB 65 dB 70 dB 65 dB
低-偏置 - NO - NO NO NO NO
微功率 - NO - NO NO NO NO
功率 - NO - NO NO NO NO
可编程功率 - NO - NO NO NO NO
宽带 - NO - NO NO NO NO
是否Rohs认证 - - 符合 符合 符合 - 符合
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