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LM386N-4/NOPB

IC 1 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8, DIP-8, Audio/Video Amplifier

器件类别:模拟混合信号IC    消费电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
National Semiconductor(TI )
包装说明
DIP, DIP8,.3
Reach Compliance Code
compliant
ECCN代码
EAR99
标称带宽
300 kHz
商用集成电路类型
AUDIO AMPLIFIER
增益
46 dB
谐波失真
10%
JESD-30 代码
R-PDIP-T8
JESD-609代码
e3
长度
9.817 mm
湿度敏感等级
1
信道数量
1
功能数量
1
端子数量
8
最高工作温度
70 °C
最低工作温度
标称输出功率
1 W
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
5.08 mm
最大压摆率
8 mA
最大供电电压 (Vsup)
18 V
最小供电电压 (Vsup)
5 V
表面贴装
NO
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
7.62 mm
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LM386 Low Voltage Audio Power Amplifier
August 2000
LM386
Low Voltage Audio Power Amplifier
General Description
The LM386 is a power amplifier designed for use in low volt-
age consumer applications. The gain is internally set to 20 to
keep external part count low, but the addition of an external
resistor and capacitor between pins 1 and 8 will increase the
gain to any value from 20 to 200.
The inputs are ground referenced while the output automati-
cally biases to one-half the supply voltage. The quiescent
power drain is only 24 milliwatts when operating from a 6 volt
supply, making the LM386 ideal for battery operation.
Features
n
n
n
n
n
n
n
n
Battery operation
Minimum external parts
Wide supply voltage range: 4V–12V or 5V–18V
Low quiescent current drain: 4mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion: 0.2% (A
V
= 20, V
S
= 6V, R
L
= 8Ω, P
O
=
125mW, f = 1kHz)
n
Available in 8 pin MSOP package
Applications
n
n
n
n
n
n
n
n
AM-FM radio amplifiers
Portable tape player amplifiers
Intercoms
TV sound systems
Line drivers
Ultrasonic drivers
Small servo drivers
Power converters
Equivalent Schematic and Connection Diagrams
Small Outline,
Molded Mini Small Outline,
and Dual-In-Line Packages
DS006976-2
DS006976-1
Top View
Order Number LM386M-1,
LM386MM-1, LM386N-1,
LM386N-3 or LM386N-4
See NS Package Number
M08A, MUA08A or N08E
© 2000 National Semiconductor Corporation
DS006976
www.national.com
LM386
Absolute Maximum Ratings
(Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
(LM386N-1, -3, LM386M-1)
Supply Voltage (LM386N-4)
Package Dissipation (Note 3)
(LM386N)
(LM386M)
(LM386MM-1)
Input Voltage
Storage Temperature
Operating Temperature
Junction Temperature
Soldering Information
15V
22V
1.25W
0.73W
0.595W
±
0.4V
−65˚C to +150˚C
0˚C to +70˚C
+150˚C
Dual-In-Line Package
Soldering (10 sec)
+260˚C
Small Outline Package
(SOIC and MSOP)
Vapor Phase (60 sec)
+215˚C
Infrared (15 sec)
+220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Thermal Resistance
37˚C/W
θ
JC
(DIP)
107˚C/W
θ
JA
(DIP)
35˚C/W
θ
JC
(SO Package)
172˚C/W
θ
JA
(SO Package)
210˚C/W
θ
JA
(MSOP)
56˚C/W
θ
JC
(MSOP)
Electrical Characteristics
(Notes 1, 2)
T
A
= 25˚C
Parameter
Operating Supply Voltage (V
S
)
LM386N-1, -3, LM386M-1, LM386MM-1
LM386N-4
Quiescent Current (I
Q
)
Output Power (P
OUT
)
LM386N-1, LM386M-1, LM386MM-1
LM386N-3
LM386N-4
Voltage Gain (A
V
)
Bandwidth (BW)
Total Harmonic Distortion (THD)
Power Supply Rejection Ratio (PSRR)
Input Resistance (R
IN
)
Input Bias Current (I
BIAS
)
V
S
= 6V, Pins 2 and 3 Open
Note 1:
All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3:
For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and 1) a thermal resis-
tance of 107˚C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170˚C/W for the small outline package.
Conditions
Min
4
5
Typ
Max
12
18
Units
V
V
mA
mW
mW
mW
dB
dB
kHz
%
dB
kΩ
nA
V
S
= 6V, V
IN
= 0
V
S
= 6V, R
L
= 8Ω, THD = 10%
V
S
= 9V, R
L
= 8Ω, THD = 10%
V
S
= 16V, R
L
= 32Ω, THD = 10%
V
S
= 6V, f = 1 kHz
10 µF from Pin 1 to 8
V
S
= 6V, Pins 1 and 8 Open
V
S
= 6V, R
L
= 8Ω, P
OUT
= 125 mW
f = 1 kHz, Pins 1 and 8 Open
V
S
= 6V, f = 1 kHz, C
BYPASS
= 10 µF
Pins 1 and 8 Open, Referred to Output
250
500
700
4
325
700
1000
26
46
300
0.2
50
50
250
8
www.national.com
2
LM386
Application Hints
GAIN CONTROL
To make the LM386 a more versatile amplifier, two pins (1
and 8) are provided for gain control. With pins 1 and 8 open
the 1.35 kΩ resistor sets the gain at 20 (26 dB). If a capacitor
is put from pin 1 to 8, bypassing the 1.35 kΩ resistor, the
gain will go up to 200 (46 dB). If a resistor is placed in series
with the capacitor, the gain can be set to any value from 20
to 200. Gain control can also be done by capacitively cou-
pling a resistor (or FET) from pin 1 to ground.
Additional external components can be placed in parallel
with the internal feedback resistors to tailor the gain and fre-
quency response for individual applications. For example,
we can compensate poor speaker bass response by fre-
quency shaping the feedback path. This is done with a series
RC from pin 1 to 5 (paralleling the internal 15 kΩ resistor).
For 6 dB effective bass boost: R
.
15 kΩ, the lowest value
for good stable operation is R = 10 kΩ if pin 8 is open. If pins
1 and 8 are bypassed then R as low as 2 kΩ can be used.
This restriction is because the amplifier is only compensated
for closed-loop gains greater than 9.
INPUT BIASING
The schematic shows that both inputs are biased to ground
with a 50 kΩ resistor. The base current of the input transis-
tors is about 250 nA, so the inputs are at about 12.5 mV
when left open. If the dc source resistance driving the LM386
is higher than 250 kΩ it will contribute very little additional
offset (about 2.5 mV at the input, 50 mV at the output). If the
dc source resistance is less than 10 kΩ, then shorting the
unused input to ground will keep the offset low (about 2.5 mV
at the input, 50 mV at the output). For dc source resistances
between these values we can eliminate excess offset by put-
ting a resistor from the unused input to ground, equal in
value to the dc source resistance. Of course all offset prob-
lems are eliminated if the input is capacitively coupled.
When using the LM386 with higher gains (bypassing the
1.35 kΩ resistor between pins 1 and 8) it is necessary to by-
pass the unused input, preventing degradation of gain and
possible instabilities. This is done with a 0.1 µF capacitor or
a short to ground depending on the dc source resistance on
the driven input.
3
www.national.com
LM386
Typical Performance Characteristics
Quiescent Supply Current
vs Supply Voltage
Power Supply Rejection Ratio
(Referred to the Output)
vs Frequency
Peak-to-Peak Output Voltage
Swing vs Supply Voltage
DS006976-5
DS006976-13
DS006976-12
Voltage Gain vs Frequency
Distortion vs Frequency
Distortion vs Output Power
DS006976-14
DS006976-15
DS006976-16
Device Dissipation vs Output
Power — 4Ω Load
Device Dissipation vs Output
Power — 8Ω Load
Device Dissipation vs Output
Power — 16Ω Load
DS006976-17
DS006976-18
DS006976-19
www.national.com
4
LM386
Typical Applications
Amplifier with Gain = 20
Minimum Parts
Amplifier with Gain = 200
DS006976-4
DS006976-3
Amplifier with Gain = 50
Low Distortion Power Wienbridge Oscillator
DS006976-6
DS006976-7
Amplifier with Bass Boost
Square Wave Oscillator
DS006976-8
DS006976-9
5
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参数对比
与LM386N-4/NOPB相近的元器件有:LM386MMX-1/NOPB、LM386M-1/NOPB、LM386N-1/NOPB、LM386MX-1/NOPB、LM386N-3/NOPB。描述及对比如下:
型号 LM386N-4/NOPB LM386MMX-1/NOPB LM386M-1/NOPB LM386N-1/NOPB LM386MX-1/NOPB LM386N-3/NOPB
描述 IC 1 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8, DIP-8, Audio/Video Amplifier IC 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, 0.118 INCH, MSOP-8, Audio/Video Amplifier IC 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, SOIC-8, Audio/Video Amplifier IC 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8, DIP-8, Audio/Video Amplifier IC 0.325 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, SOIC-8, Audio/Video Amplifier IC 0.7 W, 1 CHANNEL, AUDIO AMPLIFIER, PDIP8, DIP-8, Audio/Video Amplifier
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
包装说明 DIP, DIP8,.3 TSSOP, TSSOP8,.19 SOP, SOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25 DIP, DIP8,.3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
标称带宽 300 kHz 300 kHz 300 kHz 300 kHz 300 kHz 300 kHz
商用集成电路类型 AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER
增益 46 dB 46 dB 46 dB 46 dB 46 dB 46 dB
谐波失真 10% 10% 10% 10% 10% 10%
JESD-30 代码 R-PDIP-T8 S-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e3 e3 e3 e3 e3 e3
长度 9.817 mm 3 mm 4.9 mm 9.817 mm 4.9 mm 9.817 mm
湿度敏感等级 1 1 1 1 1 1
信道数量 1 1 1 1 1 1
功能数量 1 1 1 1 1 1
端子数量 8 8 8 8 8 8
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
标称输出功率 1 W 0.325 W 0.325 W 0.325 W 0.325 W 0.7 W
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP TSSOP SOP DIP SOP DIP
封装等效代码 DIP8,.3 TSSOP8,.19 SOP8,.25 DIP8,.3 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR SQUARE RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 260 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 1.1 mm 1.75 mm 5.08 mm 1.75 mm 5.08 mm
最大压摆率 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA
最大供电电压 (Vsup) 18 V 12 V 12 V 12 V 12 V 12 V
最小供电电压 (Vsup) 5 V 4 V 4 V 4 V 4 V 4 V
表面贴装 NO YES YES NO YES NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 2.54 mm 0.65 mm 1.27 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40 40
宽度 7.62 mm 3 mm 3.9 mm 7.62 mm 3.9 mm 7.62 mm
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