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LM6325N

High Speed Buffer

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
National Semiconductor(TI )
零件包装代码
DIP
包装说明
DIP, DIP14,.3
针数
14
Reach Compliance Code
unknow
ECCN代码
EAR99
放大器类型
BUFFER
最大平均偏置电流 (IIB)
7 µA
标称带宽 (3dB)
50 MHz
25C 时的最大偏置电流 (IIB)
7 µA
最大输入失调电压
100000 µV
JESD-30 代码
R-PDIP-T14
JESD-609代码
e0
长度
19.18 mm
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
14
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-15 V
认证状态
Not Qualified
座面最大高度
5.08 mm
最小摆率
550 V/us
标称压摆率
800 V/us
最大压摆率
22 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
LM6125/LM6225/LM6325 High Speed Buffer
December 1994
LM6125/LM6225/LM6325
High Speed Buffer
General Description
The LM6125 family of high speed unity gain buffers slew at
800 V/µs and have a small signal bandwidth of 50 MHz while
driving a 50Ω load. These buffers drive
±
300 mA peak and
do not oscillate while driving large capacitive loads. The
LM6125 contains unique features not found in power buffers;
these include current limit, thermal shutdown, electronic
shutdown, and an error flag that warns of fault conditions.
These buffers are built with National’s VIP
(Vertically Inte-
grated PNP) process which provides fast PNP transistors
that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed
performance without the need for complex and expensive di-
electric isolation.
n
n
n
n
n
n
High output current:
±
300 mA
Stable with large capacitive loads
Current and thermal limiting
Electronic shutdown
5V to
±
15V operation guaranteed
Fully specified to drive 50Ω lines
Applications
n
Line Driving
n
Radar
n
Sonar
Features
n
High slew rate:
800 V/µs
Simplified Schematic and Block Diagram
DS009222-1
DS009222-2
Numbers in () are for 14–pin N DIP.
VIP
is a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation
DS009222
www.national.com
Pin Configurations
DS009222-4
Note:
Pin 4 connected to case
DS009222-3
*Heat sinking pins.
Internally connected to V−.
Order Number LM6225N
or LM6325N
See NS Package Number N14A
Top View
Order Number LM6125H/883
(Note 1)
or LM6125H
See NS Package Number H08C
Note 1:
Available per 5962-9081501
www.national.com
2
Absolute Maximum Ratings
(Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Input to Output Voltage (Note 2)
Input Voltage
Output Short-Circuit to GND
(Note 3)
Flag Output Voltage
Storage Temperature Range
Lead Temperature
(Soldering, 10 seconds)
36V (
±
18V)
±
7V
±
Vsupply
Continuous
GND
Vflag
+Vsupply
−65˚C to +150˚C
260˚C
ESD Tolerance (Note 9)
θ
JA
(Note 4)
H Package
N Package
Maximum Junction
Temperature (T
J
)
Operating Temperature Range
LM6125
LM6225
LM6325
Operating Supply Voltage Range
±
1500V
150˚C/W
40˚C/W
150˚C
−55˚C to +125˚C
−40˚C to +85˚C
0˚C to +70˚C
4.75V to
±
16V
DC Electrical Characteristics
The following specifications apply for Supply Voltage =
±
15V, V
CM
= 0, R
L
100 kΩ and R
S
= 50Ω unless otherwise noted.
Boldface
limits apply for T
A
= T
J
= T
MIN
to T
MAX
; all other limits T
A
= T
J
= 25˚C.
Symbol
Parameter
Conditions
Typ
LM6125
Limit
(Notes 5, 10)
A
V1
A
V2
A
V3
V
OS
I
B
R
IN
C
IN
R
O
I
S1
I
S2
I
S/D
V
O1
V
O2
V
O3
V
O4
PSRR
V
OL
Voltage Gain 1
Voltage Gain 2
Voltage Gain 3
(Note 6)
Offset Voltage
Input Bias Current
Input Resistance
Input Capacitance
Output Resistance
Supply Current 1
Supply Current 2
Supply Current
in Shutdown
Output Swing 1
Output Swing 2
Output Swing 3
Output Swing 4
Power Supply
Rejection Ratio
Flag Pin Output
Low Voltage
V
±
=
±
5V to
±
15V
V
S/D
= 0V
R
L
= 1 kΩ
R
L
= 100Ω
R
L
= 50Ω
R
L
= 50Ω
V+ = 5V (Note 6)
13.5
12.7
12
1.8
70
I
OUT
=
±
10 mA
R
L
=
R
L
=
, V+ = 5V
R
L
=
, V
±
=
±
15V
R
L
= 1kΩ, V
IN
=
±
10V
R
L
= 50Ω, V
IN
=
±
10V
R
L
= 50Ω, V+ = 5V
V
IN
= 2 V
PP
(1.5 V
PP
)
R
L
= 1 kΩ
R
L
= 1 kΩ, R
S
= 10 kΩ
R
L
= 50Ω
0.990
0.900
0.840
15
1
5
3.5
3
15
14
1.1
5
10
18
20
16
18
1.5
2.0
13.3
13
11.5
10
11
9
1.6
1.3
60
55
300
400
5
10
18
20
16
18
1.5
2.0
13.3
13
11.5
10
11
9
1.6
1.4
60
50
300
400
5
6
20
22
18
20
1.5
2.0
13.2
13
11
10
10
9
1.6
1.5
60
50
340
400
V
PP
Min
dB
Min
mV
Max
mA
Max
0.980
0.970
0.860
0.800
0.780
0.750
30
50
4
7
LM6225
Limit
(Note 5)
0.980
0.950
0.860
0.820
0.780
0.700
30
60
4
7
LM6325
Limit
(Note 5)
0.970
0.950
0.850
0.820
0.750
0.700
50
100
5
7
mV
Max
µA
Max
MΩ
pF
Max
V/V
Min
Units
±
V
Min
3
www.national.com
DC Electrical Characteristics
Symbol
Parameter
(Continued)
The following specifications apply for Supply Voltage =
±
15V, V
CM
= 0, R
L
100 kΩ and R
S
= 50Ω unless otherwise noted.
Boldface
limits apply for T
A
= T
J
= T
MIN
to T
MAX
; all other limits T
A
= T
J
= 25˚C.
Conditions
Typ
LM6125
Limit
(Notes 5, 10)
I
OH
V
TH
V
IH
V
IL
I
IL
I
IH
I
O
Flag Pin Output
High Current
Shutdown Threshold
Shutdown Pin
Trip Point High
Shutdown Pin
Trip Point Low
Shutdown Pin
Input Low Current
Shutdown Pin
Input High Current
Bi-State Output
Current
Shutdown Pin = 0V
V
OUT
= +5V or −5V
1
V
S/D
= 5V
−0.05
V
S/D
= 0V
−0.07
V
OH
Flag Pin = 15V
(Note 6)
1.4
2.0
2.0
0.8
0.8
−10
−20
−10
−20
50
2000
2.0
2.0
0.8
0.8
−10
−20
−10
−20
50
100
2.0
2.0
0.8
0.8
−10
−20
−10
−20
100
200
0.01
10
20
LM6225
Limit
(Note 5)
10
20
LM6325
Limit
(Note 5)
10
20
µA
Max
V
V
Min
V
Max
µA
Max
µA
Max
µA
Units
AC Electrical Characteristics
The following specifications apply for Supply Voltage =
±
15V, V
CM
= 0, R
L
100 kΩ and R
S
= 50Ω unless otherwise noted.
Boldface
limits apply for T
A
= T
J
= T
MIN
to T
MAX
; all other limits T
A
= T
J
= 25˚C.
Symbol
Parameter
Conditions
Typ
LM6125
Limit
(Note 5)
SR
1
SR
2
SR
3
BW
t
r
, t
f
t
PD
O
S
V
FT
Slew Rate 1
Slew Rate 2
Slew Rate 3
−3 dB Bandwidth
Rise Time
Fall Time
Propagation
Delay Time
Overshoot
V
IN
, V
OUT
Feedthrough
in Shutdown
C
OUT
t
SD
Output Capacitance
in Shutdown
Shutdown
Response Time
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond its rated operating conditions.
Note 3:
During current limit, thermal limit, or electronic shutdown the input current will increase if the input to output differential voltage exceeds 8V. See Overvoltage
Protection in Application Hints.
Note 4:
The LM6125 series buffers contain current limit and thermal shutdown to protect against fault conditions.
LM6225
Limit
(Note 5)
550
LM6325
Limit
(Note 5)
550
Units
V
IN
=
±
11V, R
L
= 1 kΩ
V
IN
=
±
11V, R
L
= 50Ω
(Note 8)
V
IN
= 2 V
PP
, R
L
= 50Ω
V+ = 5V (Note 6)
V
IN
= 100 mV
PP
R
L
= 50Ω, C
L
10 pF
R
L
= 50Ω, C
L
10 pF
V
O
= 100 mV
PP
R
L
= 50Ω, C
L
10 pF
V
O
= 100 mV
PP
R
L
= 50Ω, C
L
10 pF
V
O
= 100 mV
PP
Shutdown Pin = 0V
V
IN
= 4 V
PP
, 1 MHz
R
L
= 50Ω
Shutdown Pin = 0V
1200
800
50
50
8.0
4.0
10
30
30
30
550
V/µs
Min
MHz
Min
ns
ns
%
−50
30
700
dB
pF
ns
www.national.com
4
AC Electrical Characteristics
(Continued)
Note 5:
For operation at elevated temperature, these devices must be derated based on a thermal resistance of
θ
JA
and T
J
max, T
J
= T
A
+
θ
JA
P
D
.
θ
JC
for the
LM6125H and LM6225H is 17˚C/W. The thermal impedance
θ
JA
of the device in the N package is 40˚C/W when soldered directly to a printed circuit board, and the
heat-sinking pins (pins 3, 4, 5, 10, 11, and 12) are connected to 2 square inches of 2 oz. copper. When installed in a socket, the thermal impedance
θ
JA
of the N pack-
age is 60˚C/W.
Note 6:
Limits are guaranteed by testing or correlation.
Note 7:
The input is biased to +2.5V, and V
IN
swings V
PP
about this value. The input swing is 2 V
PP
at all temperatures except for the A
V
3 test at −55˚C where it
is reduced to 1.5 V
PP
.
Note 8:
The Error Flag is set (low) during current limit or thermal fault detection in addition to being set by the Shutdown pin. It is an open-collector output which re-
quires an external pullup resistor.
Note 9:
Slew rate is measured with a
±
11V input pulse and 50Ω source impedance at 25˚C. Since voltage gain is typically 0.9 driving a 50Ω load, the output swing
will be approximately
±
10V. Slew rate is calculated for transitions between
±
5V levels on both rising and falling edges. A high speed measurement is done to minimize
device heating. For slew rate versus junction temperature see typical performance curves. The input pulse amplitude should be reduced to
±
10V for measurements
at temperature extremes. For accurate measurements, the input slew rate should be at least 1700 V/µs.
Note 10:
The test circuit consists of the human body model of 120 pF in series with 1500Ω.
Note 11:
A military RETS specification is available on request. At the time of printing, the LM6125H/883 RETS spec complied with the Boldface limits in this column.
The LM6125H/883 may also be procured as Standard Military Drawing specification
#5962-9081501MXX.
Typical Performance Characteristics
Frequency Response
T
A
= 25˚C, V
S
=
±
15V unless otherwise specified
Slew Rate vs Temperature
Frequency Response
DS009222-9
DS009222-10
DS009222-11
Overshoot vs Capacitive Load
Large Signal Response
(R
L
= 1 kΩ)
Large Signal Response
(R
L
= 50Ω)
DS009222-12
DS009222-13
DS009222-14
Supply Current
−3 dB Bandwidth
Slew Rate
DS009222-15
DS009222-16
DS009222-17
5
www.national.com
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参数对比
与LM6325N相近的元器件有:LM6125、LM6125H、LM6125H/883、LM6225N。描述及对比如下:
型号 LM6325N LM6125 LM6125H LM6125H/883 LM6225N
描述 High Speed Buffer High Speed Buffer High Speed Buffer High Speed Buffer High Speed Buffer
是否Rohs认证 不符合 - 不符合 不符合 不符合
厂商名称 National Semiconductor(TI ) - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
零件包装代码 DIP - BCY BCY DIP
包装说明 DIP, DIP14,.3 - , CAN8,.2 , CAN8,.2 DIP, DIP14,.3
针数 14 - 8 8 14
Reach Compliance Code unknow - unknow unknow unknow
ECCN代码 EAR99 - EAR99 EAR99 EAR99
放大器类型 BUFFER - BUFFER BUFFER BUFFER
最大平均偏置电流 (IIB) 7 µA - 7 µA 4 µA 7 µA
标称带宽 (3dB) 50 MHz - 50 MHz 50 MHz 50 MHz
25C 时的最大偏置电流 (IIB) 7 µA - 7 µA 4 µA 7 µA
最大输入失调电压 100000 µV - 50000 µV 30000 µV 60000 µV
JESD-30 代码 R-PDIP-T14 - O-MBCY-W8 O-MBCY-W8 R-PDIP-T14
JESD-609代码 e0 - e0 e0 e0
负供电电压上限 -18 V - -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V - -15 V -15 V -15 V
功能数量 1 - 1 1 1
端子数量 14 - 8 8 14
最高工作温度 70 °C - 125 °C 125 °C 85 °C
最低工作温度 - - -55 °C -55 °C -40 °C
封装主体材料 PLASTIC/EPOXY - METAL METAL PLASTIC/EPOXY
封装等效代码 DIP14,.3 - CAN8,.2 CAN8,.2 DIP14,.3
封装形状 RECTANGULAR - ROUND ROUND RECTANGULAR
封装形式 IN-LINE - CYLINDRICAL CYLINDRICAL IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 +-15 V - +-15 V +-5/+-15 V +-15 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified
最小摆率 550 V/us - 550 V/us 550 V/us 550 V/us
标称压摆率 800 V/us - 800 V/us 800 V/us 800 V/us
最大压摆率 22 mA - 20 mA 20 mA 20 mA
供电电压上限 18 V - 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V - 15 V 15 V 15 V
表面贴装 NO - NO NO NO
技术 BIPOLAR - BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL - MILITARY MILITARY INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE - WIRE WIRE THROUGH-HOLE
端子位置 DUAL - BOTTOM BOTTOM DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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