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LMC662EN

DUAL OP-AMP, 6500uV OFFSET-MAX, 1.4MHz BAND WIDTH, PDIP8, DIP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
DIP
包装说明
DIP-8
针数
8
Reach Compliance Code
unknown
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.00006 µA
标称共模抑制比
83 dB
最大输入失调电压
6500 µV
JESD-30 代码
R-PDIP-T8
JESD-609代码
e0
长度
9.817 mm
湿度敏感等级
NOT SPECIFIED
负供电电压上限
-8 V
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
座面最大高度
5.08 mm
标称压摆率
1.1 V/us
供电电压上限
8 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
1400 kHz
宽度
7.62 mm
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LMC662 CMOS Dual Operational Amplifier
April 1998
LMC662
CMOS Dual Operational Amplifier
General Description
The LMC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V
OS
, drift, and
broadband noise as well as voltage gain into realistic loads
(2 kΩ and 600Ω) are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC660 datasheet for a Quad CMOS operational
amplifier with these same features.
n
n
n
n
n
n
n
Ultra low input bias current: 2 fA
Input common-mode range includes V
Operating range from +5V to +15V supply
I
SS
= 400 µA/amplifier; independent of V+
Low distortion: 0.01% at 10 kHz
Slew rate: 1.1 V/µs
Available in extended temperature range (−40˚C to
+125˚C); ideal for automotive applications
n
Available to a Standard Military Drawing specification
Applications
n
n
n
n
n
n
n
n
High-impedance buffer or preamplifier
Precision current-to-voltage converter
Long-term integrator
Sample-and-hold circuit
Peak detector
Medical instrumentation
Industrial controls
Automotive sensors
Features
n
n
n
n
n
Rail-to-rail output swing
Specified for 2 kΩ and 600Ω loads
High voltage gain: 126 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 µV/˚C
Connection Diagram
8-Pin DIP/SO
DS009763-1
Ordering Information
Package
Military
8-Pin
Ceramic DIP
8-Pin
Small Outline
8-Pin
Molded DIP
8-Pin
Side Brazed
Ceramic DIP
LMC662AMD
D08C
Rail
LMC662EN
LMC662AIN
LMC662CN
N08E
LMC662EM
LMC662AIM
LMC662CM
M08A
Rail,
Tape and Reel
Rail
LMC662AMJ/883
Temperature Range
Extended
Industrial
Commercial
NSC
Drawing
J08A
Transport
Media
Rail
© 1999 National Semiconductor Corporation
DS009763
www.national.com
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
− V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Power Dissipation
Junction Temperature
ESD Tolerance (Note 8)
1000V
Operating Ratings
(Note 3)
Temperature Range
LMC662AMJ/883,
LMC662AMD
LMC662AI
LMC662C
LMC662E
Supply Voltage Range
Power Dissipation
Thermal Resistance (θ
JA
) (Note 11)
8-Pin Ceramic DIP
8-Pin Molded DIP
8-Pin SO
8-Pin Side Brazed Ceramic DIP
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
0˚C
T
J
+70˚C
−40˚C
T
J
+125˚C
4.75V to 15.5V
(Note 10)
100˚C/W
101˚C/W
165˚C/W
100˚C/W
±
Supply Voltage
16V
(Note 12)
(Note 1)
260˚C
−65˚C to +150˚C
(V
+
) +0.3V, (V
) −0.3V
±
18 mA
±
5 mA
35 mA
(Note 2)
150˚C
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V,
V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC662AMJ/883
LMC662AMD
Limit
(Notes 4, 9)
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
V = 5V & 15V
For CMRR
50 dB
V − 1.9
Large Signal
Voltage Gain
R
L
= 2 kΩ (Note 5)
Sourcing
Sinking
R
L
= 600Ω (Note 5)
Sourcing
Sinking
250
500
1000
2000
+
+
+
+
LMC662AI
Limit
(Note 4)
3
3.3
LMC662C
Limit
(Note 4)
6
6.3
LMC662E
Limit
(Note 4)
6
6.5
Units
1
1.3
0.002
0.001
3
3.5
mV
max
µV/˚C
20
100
20
100
2
70
68
70
68
84
83
−0.1
0
V − 2.3
V − 2.5
440
400
180
120
220
200
100
60
+
+
+
+
pA
4
2
1
63
62
63
62
74
73
−0.1
0
V − 2.3
V − 2.4
300
200
90
80
150
100
50
40
+
+
60
60
63
60
63
60
74
70
−0.1
0
V − 2.3
V − 2.6
200
100
90
40
100
75
50
20
max
pA
max
TeraΩ
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
>
1
0V
V
CM
12.0V
V
+
= 15V
5V
V
15V
V
O
= 2.5V
+
83
83
94
−0.4
70
68
70
68
84
82
−0.1
0
V − 2.3
V − 2.6
400
300
180
70
200
150
100
35
0V
V
−10V
www.national.com
2
DC Electrical Characteristics
Parameter
Conditions
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V,
V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Typ
(Note 4)
LMC662AMJ/883
LMC662AMD
Limit
(Notes 4, 9)
Output Swing
V = 5V
R
L
= 2 kΩ to V
+
/2
+
LMC662AI
Limit
(Note 4)
4.82
4.79
0.15
0.17
4.41
4.31
0.50
0.56
14.50
14.44
0.35
0.40
13.35
13.15
1.16
1.32
16
14
16
14
28
25
28
24
1.3
1.5
LMC662C
Limit
(Note 4)
4.78
4.76
0.19
0.21
4.27
4.21
0.63
0.69
14.37
14.32
0.44
0.48
12.92
12.76
1.45
1.58
13
11
13
11
23
21
23
20
1.6
1.8
LMC662E
Limit
(Note 4)
4.78
4.70
0.19
0.25
4.27
4.10
0.63
0.75
14.37
14.25
0.44
0.55
12.92
12.60
1.45
1.75
13
9
13
9
23
15
23
15
1.6
1.9
Units
4.87
0.10
4.82
4.77
0.15
0.19
4.41
4.24
0.50
0.63
14.50
14.40
0.35
0.43
13.35
13.02
1.16
1.42
16
12
16
12
19
19
19
19
1.3
1.8
V
min
V
max
V
min
V
max
V
min
V
max
V
min
V
max
mA
min
mA
min
mA
min
mA
min
mA
max
V = 5V
R
L
= 600Ω to V
+
/2
+
4.61
0.30
V = 15V
R
L
= 2 kΩ to V
+
/2
+
14.63
0.26
V
+
= 15V
R
L
= 600Ω to V
+
/2
13.90
0.79
Output Current
V
+
= 5V
Sourcing, V
O
= 0V
Sinking, V
O
= 5V
22
21
40
39
0.75
Output Current
V
+
= 15V
Sourcing, V
O
= 0V
Sinking, V
O
= 13V
(Note 12)
Supply Current
Both Amplifiers
V
O
= 1.5V
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V,
V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note
4)
LMC662AMJ/883
LMC662AMD
Limit
(Notes 4, 9)
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input-Referred Voltage Noise
Input-Referred Current Noise
Total Harmonic Distortion
(Note 7)
F = 1 kHz
F = 1 kHz
F = 10 kHz, A
V
= −10
R
L
= 2 kΩ, V
O
= 8 V
PP
V
+
= 15V
0.01
%
(Note 6)
1.1
1.4
50
17
130
22
0.0002
0.8
0.5
Limit
(Note 4)
0.8
0.6
Limit
(Note 4)
0.8
0.7
Limit
(Note 4)
0.8
0.4
V/µs
min
MHz
Deg
dB
dB
LMC662AI
LMC662C
LMC662E
Units
3
www.national.com
AC Electrical Characteristics
(Continued)
Note 1:
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)
–T
A
)/θ
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
V
O
11.5V. For Sinking tests, 2.5V
V
O
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 10 kΩ connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
Human body model, 1.5 kΩ in series with 100 pF.
Note 9:
A military RETS electrical test specification is available on request. At the time of printing, the LMC662AMJ/883 RETS spec complied fully with the
boldface
limits in this column. The LMC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 10:
For operating at elevated temperatures the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/θ
JA
.
Note 11:
All numbers apply for packages soldered directly into a PC board.
Note 12:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
Typical Performance Characteristics
Supply Current vs
Supply Voltage
Offset Voltage
V
S
=
±
7.5V, T
A
= 25˚C unless otherwise specified
Input Bias Current
DS009763-25
DS009763-24
DS009763-26
Output Characteristics
Current Sinking
Output Characteristics
Current Sourcing
Input Voltage Noise
vs Frequency
DS009763-27
DS009763-28
DS009763-29
www.national.com
4
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参数对比
与LMC662EN相近的元器件有:LMC662EM。描述及对比如下:
型号 LMC662EN LMC662EM
描述 DUAL OP-AMP, 6500uV OFFSET-MAX, 1.4MHz BAND WIDTH, PDIP8, DIP-8 DUAL OP-AMP, 6500uV OFFSET-MAX, 1.4MHz BAND WIDTH, PDSO8, SO-8
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
厂商名称 Rochester Electronics Rochester Electronics
零件包装代码 DIP SOIC
包装说明 DIP-8 SO-8
针数 8 8
Reach Compliance Code unknown unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.00006 µA 0.00006 µA
标称共模抑制比 83 dB 83 dB
最大输入失调电压 6500 µV 6500 µV
JESD-30 代码 R-PDIP-T8 R-PDSO-G8
JESD-609代码 e0 e0
长度 9.817 mm 4.9 mm
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED
负供电电压上限 -8 V -8 V
功能数量 2 2
端子数量 8 8
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
座面最大高度 5.08 mm 1.75 mm
标称压摆率 1.1 V/us 1.1 V/us
供电电压上限 8 V 8 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 NO YES
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子面层 TIN LEAD TIN LEAD
端子形式 THROUGH-HOLE GULL WING
端子节距 2.54 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
标称均一增益带宽 1400 kHz 1400 kHz
宽度 7.62 mm 3.9 mm
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