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LMV854MTX

8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
National Semiconductor(TI )
零件包装代码
TSSOP
包装说明
TSSOP-14
针数
14
Reach Compliance Code
_compli
ECCN代码
EAR99
Is Samacsys
N
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0005 µA
25C 时的最大偏置电流 (IIB)
0.00001 µA
标称共模抑制比
92 dB
频率补偿
YES
最大输入失调电压
1200 µV
JESD-30 代码
R-PDSO-G14
JESD-609代码
e0
长度
5 mm
低-偏置
YES
低-失调
NO
微功率
YES
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
1
端子数量
14
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP14,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法
TAPE AND REEL
电源
3/5 V
认证状态
Not Qualified
座面最大高度
1.1 mm
标称压摆率
4.5 V/us
最大压摆率
2.05 mA
供电电压上限
6 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
标称均一增益带宽
8000 kHz
最小电压增益
70800
宽度
4.4 mm
Base Number Matches
1
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LMV851 Single/ LMV852 Dual/ LMV854 Quad 8 MHz Low Power CMOS, EMI Hardened Operational
Amplifiers
October 2007
LMV851/LMV852/LMV854
8 MHz Low Power CMOS, EMI Hardened Operational
Amplifiers
General Description
National’s LMV851/LMV852/LMV854 are CMOS input, low
power op amp ICs, providing a low input bias current, a wide
temperature range of −40°C to +125°C and exceptional per-
formance, making them robust general purpose parts. Addi-
tionally, the LMV851/LMV852/LMV854 are EMI hardened to
minimize any interference so they are ideal for EMI sensitive
applications. The unity gain stable LMV851/LMV852/LMV854
feature 8 MHz of bandwidth while consuming only 0.4 mA of
current per channel. These parts also maintain stability for
capacitive loads as large as 200 pF. The LMV851/LMV852/
LMV854 provide superior performance and economy in terms
of power and space usage. This family of parts has a maxi-
mum input offset voltage of 1 mV, a rail-to-rail output stage
and an input common-mode voltage range that includes
ground. Over an operating supply range from 2.7V to 5.5V the
LMV851/LMV852/LMV854 provide a CMRR of 92 dB, and a
PSRR of 93 dB. The LMV851/LMV852/LMV854 are offered
in the space saving 5-Pin SC70 package, the 8-Pin MSOP
and the 14-Pin TSSOP package.
Features
Unless otherwise noted, typical values at T
A
= 25°C,
V
SUPPLY
= 3.3V
2.7V to 5.5V
Supply voltage
0.4 mA
Supply current (per channel)
1 mV max
Input offset voltage
0.1 pA
Input bias current
GBW
8 MHz
87 dB
EMIRR at 1.8 GHz
11 nV/
Hz
Input noise voltage at 1 kHz
4.5 V/µs
Slew rate
Rail-to-Rail
Output voltage swing
30 mA
Output current drive
Operating ambient temperature range −40°C to 125°C
Applications
Photodiode preamp
Piezoelectric sensors
Portable/battery-powered electronic equipment
Filters/buffers
PDAs/phone accessories
Medical diagnosis equipment
Typical Application
Sensor Amplifiers Close to RF Sources
20202101
© 2007 National Semiconductor Corporation
202021
www.national.com
LMV851 Single/ LMV852 Dual/ LMV854 Quad
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model
Charge-Device Model
Machine Model
V
IN
Differential
Supply Voltage (V
+
– V
)
Voltage at Input/Output Pins
2 kV
1 kV
200V
± Supply Voltage
6V
V
+
+0.4V
V
−0.4V
(Note 4)
Storage Temperature Range
Junction Temperature (Note 3)
Soldering Information
Infrared or Convection (20 sec)
−65°C to +150°C
+150°C
+260°C
Operating Ratings
Temperature Range (Note 3)
Supply Voltage (V
+
– V
)
(Note 1)
−40°C to +125°C
2.7V to 5.5V
313 °C/W
217 °C/W
135 °C/W
Package Thermal Resistance (θ
JA
(Note 3))
5-Pin SC70
8-Pin MSOP
14-Pin TSSOP
3.3V Electrical Characteristics
Symbol
V
OS
TCV
OS
I
B
I
OS
CMRR
PSRR
EMIRR
Parameter
Input Offset Voltage
Input Offset Voltage Drift
(Note 10)
Input Bias Current
(Note 10)
Input Offset Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
EMI Rejection Ratio, IN+ and IN−
(Note 8)
Unless otherwise specified, all limits are guaranteed for T
A
= 25°C, V
+
= 3.3V, V
= 0V, V
CM
= V
+
/2, and R
L
= 10 kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Conditions
Min
(Note 6)
Typ
(Note 5)
±0.26
(Note 9)
±0.4
(Note 9)
0.1
1
−0.2V < V
CM
< V
+
- 1.2V
2.7V
V
+
5.5V,
V
OUT
= 1V
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 400 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 900 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 1800 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 2400 MHz
CMVR
A
VOL
Input Common-Mode Voltage Range CMRR
76 dB
Large Signal Voltage Gain
(Note 11)
R
L
= 2 kΩ,
V
OUT
= 0.15V to 1.65V,
V
OUT
= 3.15V to 1.65V
R
L
= 10 kΩ,
V
OUT
= 0.1V to 1.65V,
V
OUT
= 3.2V to 1.65V
V
O
Output Swing High,
(measured from V
+
)
R
L
= 2 kΩ to V
+
/2
R
L
= 10 kΩ to V
+
/2
Output Swing Low,
(measured from V
)
R
L
= 2 kΩ to V
+
/2
R
L
= 10 kΩ to V
+
/2
−0.2
100
97
100
97
114
76
75
75
74
92
(Note 9)
93
(Note 9)
64
78
87
90
2.1
V
dB
Max
(Note 6)
±1
±1.2
±2
10
500
Units
mV
μV/°C
pA
pA
dB
dB
115
dB
31
7
26
6
35
43
10
12
32
43
11
14
mV
mV
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2
LMV851 Single/ LMV852 Dual/ LMV854 Quad
Symbol
I
O
Parameter
Output Short Circuit Current
Conditions
Sourcing, V
OUT
= V
CM
,
V
IN
= 100 mV
Sinking, V
OUT
= V
CM
,
V
IN
= −100 mV
Min
(Note 6)
25
20
28
20
Typ
(Note 5)
28
31
0.42
0.79
1.54
4.5
8
62
Max
(Note 6)
Units
mA
I
S
Supply Current
LMV851
LMV852
LMV854
0.50
0.58
0.90
1.06
1.67
1.99
V/μs
MHz
deg
nV/
pA/
pF
%
mA
SR
GBW
Φ
m
e
n
i
n
R
OUT
C
IN
THD+N
Slew Rate (Note 7)
Gain Bandwidth Product
Phase Margin
Input-Referred Voltage Noise
Input-Referred Current Noise
Closed Loop Output Impedance
Common-Mode Input Capacitance
Differential-Mode Input Capacitance
Total Harmonic Distortion + Noise
A
V
= +1, V
OUT
= 1 V
PP
,
10% to 90%
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 6 MHz
11
10
0.005
400
11
6
f = 1 kHz, A
V
= 1, BW = >500 kHz
(Note 4)
0.006
5V Electrical Characteristics
Symbol
V
OS
TCV
OS
I
B
I
OS
CMRR
PSRR
EMIRR
Parameter
Input Offset Voltage
Input Offset Voltage Drift
(Note 10)
Input Bias Current
(Note 10)
Input Offset Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
EMI Rejection Ratio, IN+ and IN−
(Note 8)
Unless otherwise specified, all limits are guaranteed for T
A
= 25°C, V
+
= 5V, V
= 0V, V
CM
= V
+
/2, and R
L
= 10 kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Conditions
Min
(Note 6)
Typ
(Note 5)
±0.26
(Note 9)
±0.4
(Note 9)
0.1
1
−0.2V
V
CM
V
+
−1.2V
2.7V
V
+
5.5V,
V
OUT
= 1V
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 400 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 900 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 1800 MHz
V
RFpeak
= 100 mV
P
(−20 dBV
P
),
f = 2400 MHz
CMVR
Input Common-Mode Voltage Range CMRR
77 dB
−0.2
77
76
75
74
94
(Note 9)
93
(Note 9)
64
76
84
89
3.8
V
dB
Max
(Note 6)
±1
±1.2
±2
10
500
Units
mV
μV/°C
pA
pA
dB
dB
3
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LMV851 Single/ LMV852 Dual/ LMV854 Quad
Symbol
A
VOL
Parameter
Large Signal Voltage Gain
(Note 11)
Conditions
R
L
= 2 kΩ,
V
OUT
= 0.15V to 2.5V,
V
OUT
= 4.85V to 2.5V
R
L
= 10 kΩ,
V
OUT
= 0.1V to 2.5V,
V
OUT
= 4.9V to 2.5V
Min
(Note 6)
105
102
105
102
Typ
(Note 5)
118
Max
(Note 6)
Units
120
dB
V
O
Output Swing High,
(measured from V
+
)
R
L
= 2 kΩ to V
+
/2
R
L
= 10 kΩ to V
+
/2
34
7
31
7
60
48
58
44
65
62
0.43
0.82
1.59
4.5
8
64
39
47
11
13
38
50
12
15
mV
Output Swing Low,
(measured from V
)
R
L
= 2 kΩ to V
+
/2
R
L
= 10 kΩ to V
+
/2
mV
I
O
Output Short Circuit Current
Sourcing, V
OUT
= V
CM
,
V
IN
= 100 mV
Sinking, V
OUT
= V
CM
,
V
IN
= −100 mV
mA
I
S
Supply Current
LMV851
LMV852
LMV854
0.52
0.60
0.93
1.09
1.73
2.05
V/μs
MHz
deg
nV/
pA/
pF
%
mA
SR
GBW
Φ
m
e
n
i
n
R
OUT
C
IN
THD+N
Slew Rate (Note 7)
Gain Bandwidth Product
Phase Margin
Input-Referred Voltage Noise
Input-Referred Current Noise
Closed Loop Output Impedance
Common-Mode Input Capacitance
Differential-Mode Input Capacitance
Total Harmonic Distortion + Noise
A
V
= +1, V
OUT
= 2 V
PP
,
10% to 90%
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 6 MHz
11
10
0.005
400
11
6
f = 1 kHz, A
V
= 1, BW = >500 kHz
0.003
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2:
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3:
The maximum power dissipation is a function of T
J(MAX)
, θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is
P
D
= (T
J(MAX)
- T
A
)/ θ
JA
. All numbers apply for packages soldered directly onto a PC board.
Note 4:
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device.
Note 5:
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6:
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality
control (SQC) method.
Note 7:
Number specified is the slower of positive and negative slew rates.
Note 8:
The EMI Rejection Ratio is defined as EMIRR = 20log ( V
RFpeak
/ΔV
OS
).
Note 9:
The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting distribution
Note 10:
This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 11:
The specified limits represent the lower of the measured values for each output range condition.
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4
LMV851 Single/ LMV852 Dual/ LMV854 Quad
Connection Diagrams
5-Pin SC70
8-Pin MSOP
14-Pin TSSOP
20202102
Top View
20202103
Top View
20202104
Top View
Ordering Information
Package
5-Pin SC70
8-Pin MSOP
14-Pin TSSOP
Part Number
LMV851MG
LMV851MGX
LMV852MM
LMV852MMX
LMV854MT
LMV854MTX
Package Marking
A98
AB5A
LMV854MT
Transport Media
1k Units Tape and Reel
3k Units Tape and Reel
1k Units Tape and Reel
3.5k Units Tape and Reel
94 Units/Rail
2.5k Units Tape and Reel
NSC Drawing
MAA05A
MUA08A
MTC14
5
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参数对比
与LMV854MTX相近的元器件有:LMV851、LMV851MG、LMV851MGX、LMV852、LMV852MM、LMV852MMX、LMV854、LMV854MT。描述及对比如下:
型号 LMV854MTX LMV851 LMV851MG LMV851MGX LMV852 LMV852MM LMV852MMX LMV854 LMV854MT
描述 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers
是否Rohs认证 不符合 - 不符合 不符合 - 不符合 不符合 - 不符合
厂商名称 National Semiconductor(TI ) - National Semiconductor(TI ) National Semiconductor(TI ) - National Semiconductor(TI ) National Semiconductor(TI ) - National Semiconductor(TI )
零件包装代码 TSSOP - SC-70 SC-70 - SOIC SOIC - TSSOP
包装说明 TSSOP-14 - SC-70, 5 PIN SC-70, 5 PIN - MSOP-8 MSOP-8 - TSSOP-14
针数 14 - 5 5 - 8 8 - 14
Reach Compliance Code _compli - _compli _compli - _compli _compli - _compli
ECCN代码 EAR99 - EAR99 EAR99 - EAR99 EAR99 - EAR99
Is Samacsys N - N N - N N - N
放大器类型 OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0005 µA - 0.0005 µA 0.0005 µA - 0.0005 µA 0.0005 µA - 0.0005 µA
25C 时的最大偏置电流 (IIB) 0.00001 µA - 0.00001 µA 0.00001 µA - 0.00001 µA 0.00001 µA - 0.00001 µA
标称共模抑制比 92 dB - 92 dB 92 dB - 92 dB 92 dB - 92 dB
频率补偿 YES - YES YES - YES YES - YES
最大输入失调电压 1200 µV - 1200 µV 1200 µV - 1200 µV 1200 µV - 1200 µV
JESD-30 代码 R-PDSO-G14 - R-PDSO-G5 R-PDSO-G5 - S-PDSO-G8 S-PDSO-G8 - R-PDSO-G14
JESD-609代码 e0 - e0 e0 - e0 e0 - e0
长度 5 mm - 2 mm 2 mm - 3 mm 3 mm - 5 mm
低-偏置 YES - YES YES - YES YES - YES
低-失调 NO - NO NO - NO NO - NO
微功率 YES - YES YES - YES YES - YES
湿度敏感等级 1 - 1 1 - 1 1 - 1
功能数量 1 - 1 1 - 1 1 - 1
端子数量 14 - 5 5 - 8 8 - 14
最高工作温度 125 °C - 125 °C 125 °C - 125 °C 125 °C - 125 °C
最低工作温度 -40 °C - -40 °C -40 °C - -40 °C -40 °C - -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 TSSOP - TSSOP TSSOP - TSSOP TSSOP - TSSOP
封装等效代码 TSSOP14,.25 - TSSOP5/6,.08 TSSOP5/6,.08 - TSSOP8,.19 TSSOP8,.19 - TSSOP14,.25
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR - SQUARE SQUARE - RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法 TAPE AND REEL - TAPE AND REEL TAPE AND REEL - TAPE AND REEL TAPE AND REEL - TAPE AND REEL
电源 3/5 V - +-1.35/+-2.75/2.7/5.5 V +-1.35/+-2.75/2.7/5.5 V - +-1.35/+-2.75/2.7/5.5 V +-1.35/+-2.75/2.7/5.5 V - 3/5 V
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified
座面最大高度 1.1 mm - 1.1 mm 1.1 mm - 1.09 mm 1.09 mm - 1.1 mm
标称压摆率 4.5 V/us - 4.5 V/us 4.5 V/us - 4.5 V/us 4.5 V/us - 4.5 V/us
最大压摆率 2.05 mA - 0.6 mA 0.6 mA - 1.09 mA 1.09 mA - 2.05 mA
供电电压上限 6 V - 6 V 6 V - 6 V 6 V - 6 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V - 3.3 V 3.3 V - 3.3 V
表面贴装 YES - YES YES - YES YES - YES
技术 CMOS - CMOS CMOS - CMOS CMOS - CMOS
温度等级 AUTOMOTIVE - AUTOMOTIVE AUTOMOTIVE - AUTOMOTIVE AUTOMOTIVE - AUTOMOTIVE
端子面层 Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15)
端子形式 GULL WING - GULL WING GULL WING - GULL WING GULL WING - GULL WING
端子节距 0.65 mm - 0.65 mm 0.65 mm - 0.65 mm 0.65 mm - 0.65 mm
端子位置 DUAL - DUAL DUAL - DUAL DUAL - DUAL
标称均一增益带宽 8000 kHz - 8000 kHz 8000 kHz - 8000 kHz 8000 kHz - 8000 kHz
最小电压增益 70800 - 70800 70800 - 70800 70800 - 70800
宽度 4.4 mm - 1.25 mm 1.25 mm - 3 mm 3 mm - 4.4 mm
Base Number Matches 1 - 1 1 - 1 1 - 1
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