LSC07N70/LSD07N70/LSG07N70/LSH07N70
LonFET
Lonten N-channel 700V, 7A, 0.57Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
0.57Ω
21A
19nC
Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
dson
Ultra low gate charge (typ. Q
g
= 19nC)
100% UIS tested
RoHS compliant
D
TO-251
TO-252
TO-220
TO-220F
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
1)
Avalanche current, repetitive
1)
Power Dissipation
( T
C
= 25° )
C
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
I
DM
V
GSS
E
AS
E
AR
I
AR
P
D
V
DSS
I
D
Symbol
Value
700
7
4.4
21
±30
230
0.5
7
83
0.67
-55 to +150
7
21
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
°
C
A
A
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2014
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LSC07N70/LSD07N70/LSG07N70/LSH07N70
LonFET
Thermal Characteristics TO-251/TO-252/TO-220
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θJC
R
θJA
Symbol
Value
2.5
62
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220F
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θJC
R
θJA
Symbol
Value
4.3
80
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSC07N70
LSD07N70
LSG07N70
LSH07N70
Device Package
TO-220
TO-220F
TO-252
TO-251
Marking
LSC07N70
LSD07N70
LSG07N70
LSH07N70
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=700 V, V
GS
=0 V,
T
j
= 25°
C
T
j
= 125°
C
700
2.5
-
3.5
-
4.5
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
1
-
100
-100
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=3.5 A
T
j
= 25°
C
T
j
= 150°
C
0.51
1.2
0.4
0.57
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 300V, I
D
= 3.5A
R
G
= 12Ω, V
GS
=10V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
710
470
6
16
13
35
7
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=3.5A,
V
GS
=0 to 10 V
-
-
-
-
4
9
19
5.8
-
-
-
-
V
nC
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2014
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LSC07N70/LSD07N70/LSG07N70/LSH07N70
LonFET
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=3.5A
V
R
=50 V, I
F
=7A,
dI
F
/dt=100 A/μs
-
-
-
-
-
290
3.4
14
1.2
-
-
-
V
ns
μC
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 2.5A, V
DD
= 60V, R
G
= 25Ω, Starting T
J
= 25°
C
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
14
12
10
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
Figure 2. Transfer Characteristics
14
12
V
GS
=7V
V
GS
=6.5V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
10
Drain current I
D
(A)
8
6
4
V
GS
=5.5V
V
GS
=6V
Drain current I
D
(A)
16
8
6
4
2
0
2
0
0
4
8
12
2
4
6
8
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
1.1
1
0.9
0.8
Figure 4. Threshold Voltage vs. Temperature
1.3
1.2
1.1
V
th
, (Normalized)
Gate threshold voltage
1
0.9
0.8
0.7
0.6
0.5
I
DS
=0.25 mA
Pulse test
R
DS (on)
(Ω)
0.7
0.6
0.5
0.4
0.3
0.2
0
5
10
15
20
T
c
= 25°C
Pulse test
V
GS
= 10V
-60
-40
-20
0
20
40
60
80
100
120
140
160
Drain current I
D
(A)
Junction temperature T
j
(°C)
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2014
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LonFET
Figure 5. Breakdown Voltage vs. Temperature
1.1
Figure 6. On-Resistance vs. Temperature
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
2
1
1.5
1
0.9
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
0.5
V
GS
=10 V
I
DS
=3.5 A
Pulse test
0.8
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Figure 7. Capacitance Characteristics
10000.00
Figure 8. Gate Charge Characteristics
10
V
DS
=120V
1000.00
Gate-Source Voltage V
GS
(V)
C
iss
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
8
V
DS
=480V
Capacitance (pF)
100.00
6
10.00
C
rss
4
1.00
Notes:
f = 1 MHz
V
GS
=0 V
2
I = 3.5A
D
0.10
0.1
1
10
100
0
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9. Maximum Safe Operating Area
100
Figure 10. Power Dissipation vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
10
Limited by R
DS(on)
10us
100us
1ms
1
DC
0.1
Notes:
T
c
= 25°C
T
j
= 150°C
Single Pulse
0.01
1
10
100
1000
Drain power dissipation P
D
(W)
Drain current I
D
(A)
0
40
80
120
160
Drain-Source Voltage V
DS
(V)
Case temperature T
c
(°C)
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2014
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LonFET
Figure 11. Transient Thermal Response Curve
1.0E+01
In descending order
D=0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Normalized Transient
Thermal Resistance
1.0E+00
1.0E-01
P
DM
t
Z
θJC
1.0E-02
Duty = t/T
T
Z (t)=1.5°C/W Max.
θJC
1.0E-03
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Pulse Width t (s)
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Version 1.1
2014
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