LT1160/LT1162
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
FEATURES
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DESCRIPTIO
Floating Top Driver Switches Up to 60V
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Protection at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
The LT
®
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
APPLICATIO S
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PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
TYPICAL APPLICATIO
1N4148
HV = 60V MAX
+
12V
10µF
25V
1
10
SV
+
BOOST
T GATE DR
T GATE FB
14
13
12
11
C
BOOST
1µF
IRFZ44
1000µF
100V
PV
+
4
UV OUT
T SOURCE
LT1160
2
PWM
0Hz TO 100kHz
3
IN TOP
IN BOTTOM
SGND
5
B GATE DR
B GATE FB
PGND
6
9
8
IRFZ44
IN TOP IN BOTTOM T GATE DR B GATE DR
L
L
H
H
L
H
L
H
L
L
H
L
L
H
L
L
1160 TA01
U
11602fb
U
U
1
LT1160/LT1162
ABSOLUTE
MAXIMUM
RATINGS
(Note 1)
Supply Voltage (Note 2) ......................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10µs) .............................. 1.5A
Input Pin Voltages .......................... – 0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... – 5V to 60V
Boost to Source Voltage ........................... – 0.3V to 20V
Operating Temperature Range
Commercial .......................................... 0°C to 70°C
Industrial ......................................... – 40°C to 85°C
Junction Temperature (Note 3) ............................ 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
PACKAGE/ORDER INFORMATION
TOP VIEW
SV
+
ORDER PART
NUMBER
14 BOOST
13 T GATE DR
12 T GATE FB
11 T SOURCE
10 PV
+
9 B GATE DR
8 B GATE FB
1
IN TOP 2
IN BOTTOM 3
UV OUT 4
SGND 5
PGND 6
NC 7
N PACKAGE
14-LEAD PDIP
LT1160CN
LT1160CS
LT1160IN
LT1160IS
S PACKAGE
14-LEAD PLASTIC SO
T
JMAX
= 125°C,
θ
JA
= 70°C/ W (N)
T
JMAX
= 125°C,
θ
JA
= 110°C/ W (S)
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
I
S
DC Supply Current (Note 4)
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
=
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
CONDITIONS
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
V
INTOP
= V
INBOTTOM
= 0.8V
●
●
I
BOOST
V
IL
V
IH
I
IN
V
+UVH
V
+UVL
V
BUVH
V
BUVL
Boost Current (Note 4)
Input Logic Low
Input Logic High
Input Current
V
+
Undervoltage Start-Up Threshold
V
+
Undervoltage Shutdown Threshold
V
BOOST
Undervoltage Start-Up Threshold
V
BOOST
Undervoltage Shutdown Threshold
V
INTOP
= V
INBOTTOM
= 4V
V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
)
V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
)
2
U
U
W
W W
U
W
TOP VIEW
SV A 1
IN TOP A 2
IN BOTTOM A 3
UV OUT A 4
GND A 5
B GATE FB A 6
SV
+
B 7
IN TOP B 8
IN BOTTOM B 9
UV OUT B 10
GND B 11
B GATE FB B 12
N PACKAGE
24-LEAD PDIP
+
24 BOOST A
23 T GATE DR A
22 T GATE FB A
21 T SOURCE A
20 PV
+
A
19 B GATE DR A
18 BOOST B
17 T GATE DR B
16 T GATE FB B
15 T SOURCE B
14 PV
+
B
13 B GATE DR B
SW PACKAGE
24-LEAD PLASTIC SO WIDE
ORDER PART
NUMBER
LT1162CSW
LT1162ISW
OBSOLETE
PART NUMBERS
LT1162CN
LT1162IN
T
JMAX
= 125°C,
θ
JA
= 58°C/ W (N)
T
JMAX
= 125°C,
θ
JA
= 80°C/ W (SW)
MIN
7
7
7
3
TYP
11
10
11
4.5
1.4
MAX
15
15
15
6
0.8
25
9.7
8.8
9.8
9.2
UNITS
mA
mA
mA
mA
V
V
µA
V
V
V
V
2
8.4
7.8
8.8
8.2
1.7
7
8.9
8.3
9.3
8.7
●
11602fb
LT1160/LT1162
The
●
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
=
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
I
UVOUT
V
UVOUT
V
OH
V
OL
t
r
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
Top Gate OFF Voltage
Bottom Gate OFF Voltage
Top Gate Rise Time
Bottom Gate Rise Time
t
f
Top Gate Fall Time
Bottom Gate Fall Time
t
D1
Top Gate Turn-On Delay
Bottom Gate Turn-On Delay
t
D2
Top Gate Turn-Off Delay
Bottom Gate Turn-Off Delay
t
D3
Top Gate Lockout Delay
Bottom Gate Lockout Delay
t
D4
Top Gate Release Delay
Bottom Gate Release Delay
CONDITIONS
V
+
= 15V
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
ELECTRICAL CHARACTERISTICS
MIN
TYP
0.1
0.2
MAX
5
0.4
12
12
0.7
0.7
200
200
140
140
500
400
600
400
600
500
500
400
UNITS
µA
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
+
= 7.5V, I
UVOUT
= 2.5mA
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 5)
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 5)
V
INBOTTOM
(–) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 5)
V
INTOP
(–) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 5)
11
11
11.3
11.3
0.4
0.4
130
90
60
60
250
200
300
200
300
250
250
200
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 3:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1160CN/LT1160IN: T
J
= T
A
+ (P
D
)(70°C/W)
LT1160CS/LT1160IS: T
J
= T
A
+ (P
D
)(110°C/W)
LT1162CN/LT1162IN: T
J
= T
A
+ (P
D
)(58°C/W)
LT1162CS/LT1162IS: T
J
= T
A
+ (P
D
)(80°C/W)
Note 4:
I
S
is the sum of currents through SV
+
, PV
+
and Boost pins.
I
BOOST
is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 5:
See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
11602fb
3
LT1160/LT1162
TYPICAL PERFORMANCE CHARACTERISTICS
DC Supply Current
vs Supply Voltage
14
13
14
13
V
+
= 12V
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
11
10
9
8
7
6
5
8
10
12
14
16
18
SUPPLY VOLTAGE (V)
20
22
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
11
10
9
8
7
6
5
–50
V
INTOP
= HIGH
V
INBOTTOM
= LOW
BOTH INPUTS
HIGH OR LOW
SUPPLY CURRENT (mA)
12
BOTH INPUTS
HIGH OR LOW
DC + Dynamic Supply Current
vs Input Frequency
60
50
SUPPLY CURRENT (mA)
40
C
GATE
= 10000pF
30
20
10
0
C
GATE
= 3000pF
50% DUTY CYCLE
V
+
= 12V
SUPPLY VOLTAGE (V)
11
10
START-UP THRESHOLD
9
8
7
6
C
GATE
= 1000pF
1
10
100
INPUT FREQUENCY (kHz)
1000
1160/62 G04
V
BOOST
– V
TSOURCE
VOLTAGE (V)
Input Threshold Voltage
vs Temperature
2.0
V
+
= 12V
14
13
V
HIGH
12
INPUT THRESHOLD VOLTAGE (V)
1.8
1.6
INPUT CURRENT (µA)
11
10
9
8
7
6
5
INPUT CURRENT (mA)
V
LOW
1.4
1.2
1.0
0.8
–50
–25
0
25
50
75
TEMPERATURE (°C)
4
U W
1160/62 G01
(LT1160 or 1/2 LT1162)
DC + Dynamic Supply Current
vs Input Frequency
60
50
40
30
20
V
+
= 10V
10
0
50% DUTY CYCLE
C
GATE
= 3000pF
DC Supply Current
vs Temperature
12
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
+
= 20V
V
+
= 15V
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1
10
100
INPUT FREQUENCY (kHz)
1000
1160/62 G03
1160/62 G02
Undervoltage Lockout (V
+
)
13
12
13
12
11
10
9
8
7
6
5
Undervoltage Lockout (V
BOOST
)
V
TSOURCE
= 60V
START-UP THRESHOLD
SHUTDOWN THRESHOLD
SHUTDOWN THRESHOLD
5
4
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
4
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1160/62 G05
1160/62 G06
Top or Bottom Input Pin Current
vs Temperature
5.0
V
+
= 12V
V
IN
= 4V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
–25
50
25
0
75
TEMPERATURE (°C)
100
125
0
Top or Bottom Input Pin Current
vs Input Voltage
V
+
= 12V
100
125
4
–50
4
5
6
10
8
7
9
INPUT VOLTAGE (V)
11
12
1160/62 G07
1160/62 G08
1160/62 G09
11602fb
LT1160/LT1162
TYPICAL PERFORMANCE CHARACTERISTICS
Bottom Gate Rise Time
vs Temperature
230
210
V
+
= 12V
BOTTOM GATE FALL TIME (ns)
BOTTOM GATE RISE TIME (ns)
TOP GATE RISE TIME (ns)
190
170
150
130
110
90
70
50
–50
C
LOAD
= 10000pF
C
LOAD
= 3000pF
C
LOAD
= 1000pF
–25
0
25
50
75
TEMPERATURE (°C)
100
125
Top Gate Fall Time
vs Temperature
180
160
TOP GATE FALL TIME (ns)
140
120
100
80
60
40
C
LOAD
= 1000pF
20
–50 –25
0
25
50
75
100
125
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 10000pF
TURN ON DELAY TIME (ns)
350
300
400
TURN OFF DELAY TIME (ns)
TEMPERATURE (°C)
11160/62 G13
Lockout Delay Time
vs Temperature
400
350
V
+
= 12V
C
LOAD
= 3000pF
400
350
TOP DRIVER
BOTTOM DRIVER
LOCKOUT DELAY TIME (ns)
300
250
200
150
100
–50
RELEASE DELAY TIME (ns)
–25
U W
1160/62 G10
(LT1160 or 1/2 LT1162)
Top Gate Rise Time
vs Temperature
300
280
260
240
220
200
180
160
140
120
100
C
LOAD
= 1000pF
–25
0
25
50
75
TEMPERATURE (°C)
100
125
80
–50
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 10000pF
Bottom Gate Fall Time
vs Temperature
210
190
170
150
130
110
90
70
50
30
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
C
LOAD
= 3000pF
C
LOAD
= 1000pF
C
LOAD
= 10000pF
V
+
= 12V
1160/62 G11
1160/62 G12
Turn-On Delay Time
vs Temperature
400
V
+
= 12V
C
LOAD
= 3000pF
350
300
250
200
150
Turn-Off Delay Time
vs Temperature
V
+
= 12V
C
LOAD
= 3000pF
TOP DRIVER
TOP DRIVER
250
200
BOTTOM DRIVER
150
100
–50
BOTTOM DRIVER
–25
0
25
50
75
TEMPERATURE (°C)
100
125
100
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1160/62 G14
1160/62 G15
Release Delay Time
vs Temperature
V
+
= 12V
C
LOAD
= 3000pF
300
TOP DRIVER
250
200
BOTTOM DRIVER
150
100
–50
0
25
50
75
TEMPERATURE (°C)
100
125
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1160/62 G16
1160/62 G17
11602fb
5
嵌入式系统
