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LT1167IS8

INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
仪表放大器, 75 uV 最大补偿, 1 MHz 波段 宽度, PDSO8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Linear ( ADI )

厂商官网:http://www.analog.com/cn/index.html

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器件参数
参数名称
属性值
Brand Name
Linear Technology
是否Rohs认证
不符合
厂商名称
Linear ( ADI )
零件包装代码
SOIC
包装说明
0.150 INCH, PLASTIC, SOP-8
针数
8
制造商包装代码
S8
Reach Compliance Code
_compli
ECCN代码
EAR99
放大器类型
INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)
0.0008 µA
标称带宽 (3dB)
1 MHz
最小共模抑制比
81 dB
最大输入失调电流 (IIO)
0.0007 µA
最大输入失调电压
100 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
湿度敏感等级
1
负供电电压上限
-20 V
标称负供电电压 (Vsup)
-15 V
最大非线性
0.01%
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
235
电源
+-15 V
认证状态
Not Qualified
座面最大高度
1.75 mm
标称压摆率
1.2 V/us
最大压摆率
1.6 mA
供电电压上限
20 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
20
最大电压增益
10000
最小电压增益
1
标称电压增益
10
宽度
3.9 mm
文档预览
LT1167
Single Resistor Gain
Programmable, Precision
Instrumentation Amplifier
FEATURES
s
s
s
s
DESCRIPTIO
s
s
s
s
s
s
s
s
s
s
Single Gain Set Resistor: G = 1 to 10,000
Gain Error: G = 10, 0.08% Max
Input Offset Voltage Drift: 0.3
µ
V/
°
C Max
Meets IEC 1000-4-2 Level 4 ESD Tests with
Two External 5k Resistors
Gain Nonlinearity: G = 10, 10ppm Max
Input Offset Voltage: G = 10, 60µV Max
Input Bias Current: 350pA Max
PSRR at G = 1: 105dB Min
CMRR at G = 1: 90dB Min
Supply Current: 1.3mA Max
Wide Supply Range:
±2.3V
to
±18V
1kHz Voltage Noise: 7.5nV/√Hz
0.1Hz to 10Hz Noise: 0.28µV
P-P
Available in 8-Pin PDIP and SO Packages
APPLICATIO S
s
s
s
s
s
Bridge Amplifiers
Strain Gauge Amplifiers
Thermocouple Amplifiers
Differential to Single-Ended Converters
Medical Instrumentation
The LT
®
1167 is a low power, precision instrumentation
amplifier that requires only one external resistor to set gains
of 1 to 10,000. The low voltage noise of 7.5nV/√Hz (at 1kHz)
is not compromised by low power dissipation (0.9mA typical
for
±2.3V
to
±15V
supplies).
The part’s high accuracy (10ppm maximum nonlinearity,
0.08% max gain error (G = 10)) is not degraded even for load
resistors as low as 2k (previous monolithic instrumentation
amps used 10k for their nonlinearity specifications). The
LT1167 is laser trimmed for very low input offset voltage
(40µV max), drift (0.3µV/°C), high CMRR (90dB, G = 1) and
PSRR (105dB, G = 1). Low input bias currents of 350pA max
are achieved with the use of superbeta processing. The
output can handle capacitive loads up to 1000pF in any gain
configuration while the inputs are ESD protected up to 13kV
(human body). The LT1167 with two external 5k resistors
passes the IEC 1000-4-2 level 4 specification.
The LT1167, offered in 8-pin PDIP and SO packages, requires
significantly less PC board area than discrete multi op amp
and resistor designs. These advantages make the LT1167 the
most cost effective solution for precision instrumentation
amplifier applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
V
S
R5
392k
1
LT1634CCZ-1.25
2
2
Single Supply Barometer
Gain Nonlinearity
3
1/2
LT1490
1
4
5k
R6
1k
5k
R1
825Ω
2
6
OFFSET R4
ADJUST 50k
R3
50k
6
R8
100k
R
SET
5
5k
5k
R2
12Ω
8
3
LT1167
G = 60
5
4
TO
4-DIGIT
DVM
6
4
+
1/2
LT1490
7
R7
50k
5
0.2% ACCURACY AT 25°C
1.2% ACCURACY AT 0°C TO 60°C
V
S
= 8V TO 30V
+
+
3
NONLINEARITY (100ppm/DIV)
+
8
LUCAS NOVA SENOR
NPC-1220-015-A-3L
V
S
1
2
1
7
VOLTS
2.800
3.000
3.200
INCHES Hg
28.00
30.00
32.00
1167 TA01
U
1167 TA02
U
U
G = 1000
R
L
= 1k
V
OUT
=
±10V
OUTPUT VOLTAGE (2V/DIV)
1
LT1167
ABSOLUTE
(Note 1)
AXI U
RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW
R
G
1
–IN 2
+IN 3
–V
S
4
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
T
JMAX
= 150°C,
θ
JA
= 130°C/ W (N8)
T
JMAX
= 150°C,
θ
JA
= 190°C/ W (S8)
Supply Voltage ......................................................
±20V
Differential Input Voltage (Within the
Supply Voltage) .....................................................
±40V
Input Voltage (Equal to Supply Voltage) ................
±20V
Input Current (Note 3) ........................................
±20mA
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range ................ – 40°C to 85°C
Specified Temperature Range
LT1167AC/LT1167C (Note 4) .................. 0°C to 70°C
LT1167AI/LT1167I ............................. – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
8
+
7
6
5
R
G
+V
S
OUTPUT
REF
LT1167ACN8
LT1167ACS8
LT1167AIN8
LT1167AIS8
LT1167CN8
LT1167CS8
LT1167IN8
LT1167IS8
S8 PART MARKING
1167A
1167AI
1167
1167I
Consult factory for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
G
Gain Range
Gain Error
V
S
=
±15V,
V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
LT1167AC/LT1167AI
MIN
TYP
MAX
1
0.008
0.010
0.025
0.040
1
2
15
5
6
20
10k
0.02
0.08
0.08
0.10
6
10
40
12
15
65
LT1167C/LT1167I
MIN
TYP
MAX
1
0.015
0.020
0.030
0.040
1.5
3
20
6
7
25
10k
0.03
0.10
0.10
0.10
10
15
60
15
20
80
%
%
%
%
ppm
ppm
ppm
ppm
ppm
ppm
UNITS
CONDITIONS (Note 7)
G = 1 + (49.4k/R
G
)
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
O
=
±10V,
G = 1
V
O
=
±10V,
G = 10 and 100
V
O
=
±10V,
G = 1000
V
O
=
±10V,
G = 1, R
L
= 600
V
O
=
±10V,
G = 10 and 100,
R
L
= 600
V
O
=
±10V,
G = 1000,
R
L
= 600
Gain Nonlinearity (Note 5)
V
OST
V
OSI
V
OSO
I
OS
I
B
e
n
Total Input Referred Offset Voltage
Input Offset Voltage
Output Offset Voltage
Input Offset Current
Input Bias Current
Input Noise Voltage (Note 8)
V
OST
= V
OSI
+ V
OSO
/G
G = 1000, V
S
=
±5V
to
±15V
G = 1, V
S
=
±5V
to
±15V
15
40
90
50
0.1Hz to 10Hz, G = 1
0.1Hz to 10Hz, G = 10
0.1Hz to 10Hz, G = 100 and 1000
f
O
= 1kHz
2.00
0.50
0.28
7.5
67
12
90
40
200
320
350
20
50
100
80
2.00
0.50
0.28
7.5
67
12
90
60
300
450
500
µV
µV
pA
pA
µV
P-P
µV
P-P
µV
P-P
nV/√Hz
nV/√Hz
Total RTI Noise =
e
ni 2
+ (e
no
/G)
2
(Note 8)
e
ni
e
no
Input Noise Voltage Density (Note 8)
Output Noise Voltage Density (Note 8) f
O
= 1kHz (Note 3)
2
U
W
U
U
W W
W
LT1167
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
i
n
R
IN
C
IN(DIFF)
C
IN(CM)
V
CM
Input Noise Current
Input Noise Current Density
Input Resistance
Differential Input Capacitance
Common Mode Input
Capacitance
Input Voltage Range
CONDITIONS (Note 7)
f
O
= 0.1Hz to 10Hz
f
O
= 10Hz
V
IN
=
±10V
f
O
= 100kHz
f
O
= 100kHz
V
S
=
±15V,
V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
LT1167AC/LT1167AI
MIN
TYP
MAX
10
124
200
1000
1.6
1.6
200
LT1167C/LT1167I
MIN
TYP
MAX
10
124
1000
1.6
1.6
UNITS
pA
P-P
fA/√Hz
GΩ
pF
pF
G = 1, Other Input Grounded
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
R
L
= 10k
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G=1
G = 10
G = 100
G = 1000
G = 1, V
OUT
=
±10V
10V Step
G = 1 to 100
G = 1000
V
REF
= 0V
– V
S
+ 1.9
– V
S
+ 1.9
+ V
S
– 1.2 – V
S
+ 1.9
+ V
S
– 1.4 – V
S
+ 1.9
+ V
S
– 1.2
+ V
S
– 1.4
V
V
CMRR
Common Mode
Rejection Ratio
90
106
120
126
105
125
131
135
95
115
125
140
120
135
140
150
0.9
1.3
85
100
110
120
100
120
126
130
95
115
125
140
120
135
140
150
0.9
1.3
+ V
S
– 1.2
+ V
S
– 1.3
27
1000
800
120
12
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
kHz
kHz
kHz
kHz
V/µs
µs
µs
kΩ
µA
+ V
S
– 1.6
V
PSRR
Power Supply
Rejection Ratio
I
S
V
OUT
Supply Current
Output Voltage Swing
– V
S
+ 1.1
– V
S
+ 1.2
20
27
1000
800
120
12
0.75
1.2
14
130
20
50
– V
S
+ 1.6
+ V
S
– 1.2 – V
S
+ 1.1
+ V
S
– 1.3 – V
S
+ 1.2
20
I
OUT
BW
Output Current
Bandwidth
SR
Slew Rate
Settling Time to 0.01%
0.75
1.2
14
130
20
50
R
REFIN
I
REFIN
V
REF
A
VREF
Reference Input Resistance
Reference Input Current
Reference Voltage Range
Reference Gain to Output
+ V
S
– 1.6 – V
S
+ 1.6
1
±
0.0001
1
±
0.0001
3
LT1167
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Gain Error
The
q
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
=
±15V,
V
CM
= 0V, 0°C
T
A
70°C, R
L
= 2k, unless otherwise noted.
CONDITIONS (Note 7)
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
OUT
=
±10V,
G = 1
V
OUT
=
±10V,
G = 10 and 100
V
OUT
=
±10V,
G = 1000
G < 1000 (Note 2)
V
OST
= V
OSI
+ V
OSO
/G
V
S
=
±5V
to
±15V
(Notes 3, 6)
V
S
=
±5V
to
±15V
(Notes 3, 6)
(Note 3)
(Note 3)
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
LT1167AC
MIN
TYP
MAX
0.01
0.08
0.09
0.14
1.5
3
20
20
0.03
0.30
0.30
0.33
10
15
60
50
LT1167C
MIN
TYP
MAX
0.012
0.100
0.120
0.140
2
4
25
20
0.04
0.33
0.33
0.35
15
20
80
50
UNITS
%
%
%
%
ppm
ppm
ppm
ppm/°C
Gain Nonlinearity
G/T
V
OST
V
OSI
V
OSIH
V
OSO
V
OSOH
V
OSI
/T
V
OSO
/T
I
OS
I
OS
/T
I
B
I
B
/T
V
CM
Gain vs Temperature
Total Input Referred
Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis
Input Offset Drift (Note 8)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
18
3.0
60
30
0.05
0.7
100
0.3
75
0.4
– V
S
+ 2.1
– V
S
+ 2.1
60
380
0.3
3
400
450
23
3.0
70
30
0.06
0.8
120
0.4
105
0.4
80
500
0.4
4
550
600
µV
µV
µV
µV
µV/°C
µV/°C
pA
pA/°C
pA
pA/°C
G = 1, Other Input Grounded
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
R
L
= 10k
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G = 1, V
OUT
=
±10V
(Note 3)
q
q
+ V
S
– 1.3
+ V
S
– 1.4
– V
S
+ 2.1
– V
S
+ 2.1
+ V
S
– 1.3
+ V
S
– 1.4
V
V
CMRR
Common Mode
Rejection Ratio
q
q
q
q
q
q
q
q
q
q
q
q
q
q
88
100
115
117
103
123
127
129
92
110
120
135
115
130
135
145
1.0
1.5
+ V
S
– 1.3
+ V
S
– 1.5
21
1.1
+ V
S
– 1.6
83
97
113
114
98
118
124
126
92
110
120
135
115
130
135
145
1.0
1.5
+ V
S
–1.3
+ V
S
– 1.5
21
1.1
+ V
S
– 1.6
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
V/µs
V
PSRR
Power Supply Rejection Ratio
I
S
V
OUT
Supply Current
Output Voltage Swing
– V
S
+ 1.4
– V
S
+ 1.6
16
0.65
– V
S
+ 1.6
– V
S
+ 1.4
– V
S
+ 1.6
16
0.65
– V
S
+ 1.6
I
OUT
SR
V
REF
Output Current
Slew Rate
REF Voltage Range
4
LT1167
ELECTRICAL CHARACTERISTICS
The
q
denotes specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25°C.
V
S
=
±15V,
V
CM
= 0V, – 40°C
T
A
85°C, R
L
= 2k, unless otherwise noted. (Note 4)
SYMBOL PARAMETER
Gain Error
CONDITIONS (Note 7)
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
O
=
±10V,
G = 1
V
O
=
±10V,
G = 10 and 100
V
O
=
±10V,
G = 1000
G < 1000 (Note 2)
V
OST
= V
OSI
+ V
OSO
/G
q
q
q
q
q
q
q
q
q
MIN
LT1167AI
TYP
MAX
0.014
0.130
0.140
0.160
2
5
26
20
20
3.0
180
30
0.05
0.8
110
0.3
180
0.5
600
0.04
0.40
0.40
0.40
15
20
70
50
75
500
0.3
5
550
MIN
LT1167I
TYP
MAX
0.015
0.140
0.150
0.180
3
6
30
20
25
3.0
200
30
0.06
1
120
0.3
220
0.6
800
+V
S
– 1.3
+ V
S
– 1.4
0.4
6
700
600
0.05
0.42
0.42
0.45
20
30
100
50
100
UNITS
%
%
%
%
ppm
ppm
ppm
ppm/°C
µV
µV
µV
µV
µV/°C
µV/°C
pA
pA/°C
pA
pA/°C
V
V
G
N
Gain Nonlinearity (Notes 2, 4)
G/T
V
OST
V
OSI
V
OSIH
V
OSO
V
OSOH
V
OSI
/T
V
OSO
/T
I
OS
I
OS
/T
I
B
I
B
/T
V
CM
CMRR
Gain vs Temperature
Total Input Referred Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis
Input Offset Drift (Note 8)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
Common Mode Rejection Ratio
(Notes 3, 6)
q
(Notes 3, 6)
(Note 3)
(Note 3)
q
q
q
q
q
q
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G = 1, V
OUT
=
±10V
(Note 3)
q
q
– V
S
+ 2.1
– V
S
+ 2.1
+ V
S
– 1.3 – V
S
+ 2.1
+ V
S
– 1.4 – V
S
+ 2.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
86
98
114
116
100
120
125
128
– V
S
+ 1.4
– V
S
+ 1.6
15
0.55
– V
S
+ 1.6
90
105
118
133
112
125
132
140
1.1
1.6
81
95
112
112
95
115
120
125
+ V
S
– 1.3 – V
S
+ 1.4
+ V
S
– 1.5 – V
S
+ 1.6
90
105
118
133
112
125
132
140
1.1
1.6
+ V
S
– 1.3
+ V
S
– 1.5
20
0.95
+ V
S
– 1.6
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
V/µs
V
PSRR
Power Supply Rejection Ratio
I
S
V
OUT
I
OUT
SR
V
REF
Supply Current
Output Voltage Swing
Output Current
Slew Rate
REF Voltage Range
20
0.95
15
0.55
+ V
S
– 1.6 – V
S
+ 1.6
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2:
Does not include the effect of the external gain resistor R
G
.
Note 3:
This parameter is not 100% tested.
Note 4:
The LT1167AC/LT1167C are designed, characterized and expected
to meet the industrial temperature limits, but are not tested at – 40°C and
85°C. I-grade parts are guaranteed.
Note 5:
This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6:
Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or – 40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7:
Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 8:
Referred to input.
5
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参数对比
与LT1167IS8相近的元器件有:LT1167、LT1167ACS8、LT1167ACN8、LT1167_02、LT1167IN8、LT1167CN8、LT1167CS8、LT1167AIS8、LT1167AIN8。描述及对比如下:
型号 LT1167IS8 LT1167 LT1167ACS8 LT1167ACN8 LT1167_02 LT1167IN8 LT1167CN8 LT1167CS8 LT1167AIS8 LT1167AIN8
描述 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8 INSTRUMENTATION AMPLIFIER, 75 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
放大器类型 INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER
最小共模抑制比 81 dB 86 dB 88 dB 88 dB 86 dB 81 dB 83 dB 83 dB 86 dB 86 dB
最大输入失调电压 100 µV 75 mV 60 µV 60 µV 75 mV 100 µV 80 µV 80 µV 75 µV 75 µV
最大非线性 0.01% 0.0070 % 0.006% 0.006% 0.0070 % 0.01% 0.008% 0.008% 0.007% 0.007%
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8 8 8 8
表面贴装 YES Yes YES NO Yes NO NO YES YES NO
温度等级 INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
最大电压增益 10000 10000 10000 10000 10000 10000 10000 10000 10000 10000
最小电压增益 1 1 1 1 1 1 1 1 1 1
Brand Name Linear Technology - Linear Technology Linear Technology - Linear Technology Linear Technology Linear Technology Linear Technology Linear Technology
是否Rohs认证 不符合 - 不符合 不符合 - 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOIC - SOIC DIP - DIP DIP SOIC SOIC DIP
包装说明 0.150 INCH, PLASTIC, SOP-8 - 0.150 INCH, PLASTIC, SOP-8 DIP, DIP8,.3 - DIP, DIP8,.3 DIP, DIP8,.3 SOP, SOP8,.25 0.150 INCH, PLASTIC, SOP-8 DIP, DIP8,.3
针数 8 - 8 8 - 8 8 8 8 8
制造商包装代码 S8 - S8 N - N N S8 S8 N
Reach Compliance Code _compli - _compli _compli - _compli _compli _compli _compli _compli
ECCN代码 EAR99 - EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
最大平均偏置电流 (IIB) 0.0008 µA - 0.00045 µA 0.00045 µA - 0.0008 µA 0.0006 µA 0.0006 µA 0.0006 µA 0.0006 µA
标称带宽 (3dB) 1 MHz - 1 MHz 1 MHz - 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz
最大输入失调电流 (IIO) 0.0007 µA - 0.0004 µA 0.0004 µA - 0.0007 µA 0.00055 µA 0.00055 µA 0.00055 µA 0.00055 µA
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8 R-PDIP-T8 - R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 - e0 e0 - e0 e0 e0 e0 e0
湿度敏感等级 1 - 1 1 - 1 1 1 1 1
负供电电压上限 -20 V - -20 V -20 V - -20 V -20 V -20 V -20 V -20 V
标称负供电电压 (Vsup) -15 V - -15 V -15 V - -15 V -15 V -15 V -15 V -15 V
最高工作温度 85 °C - 70 °C 70 °C - 85 °C 70 °C 70 °C 85 °C 85 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP - SOP DIP - DIP DIP SOP SOP DIP
封装等效代码 SOP8,.25 - SOP8,.25 DIP8,.3 - DIP8,.3 DIP8,.3 SOP8,.25 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE IN-LINE - IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 235 - 235 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 235 235 NOT SPECIFIED
电源 +-15 V - +-15 V +-15 V - +-15 V +-15 V +-15 V +-15 V +-15 V
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm - 1.75 mm 3.937 mm - 3.937 mm 3.937 mm 1.75 mm 1.75 mm 3.937 mm
标称压摆率 1.2 V/us - 1.2 V/us 1.2 V/us - 1.2 V/us 1.2 V/us 1.2 V/us 1.2 V/us 1.2 V/us
最大压摆率 1.6 mA - 1.5 mA 1.5 mA - 1.6 mA 1.5 mA 1.5 mA 1.5 mA 1.6 mA
供电电压上限 20 V - 20 V 20 V - 20 V 20 V 20 V 20 V 20 V
标称供电电压 (Vsup) 15 V - 15 V 15 V - 15 V 15 V 15 V 15 V 15 V
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子节距 1.27 mm - 1.27 mm 2.54 mm - 2.54 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm
处于峰值回流温度下的最长时间 20 - 20 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 20 20 NOT SPECIFIED
标称电压增益 10 - 10 10 - 10 10 10 10 10
宽度 3.9 mm - 3.9 mm 7.62 mm - 7.62 mm 7.62 mm 3.9 mm 3.9 mm 7.62 mm
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