LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
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0.5µm InGaAs E-mode pHEMT
2.4 – 2.5GHz Operation
Single 3.3V Supply
Gain ~ 13.0dB
Noise Figure ~ 1.5dB
Input IP3 ~ +6.5dBm
Input P1dB ~ +2.5dBm
On-Chip Bias Circuit
On-Chip Input/Output Match
2mm x 2mm MLPQ-12L
Low Profile 0.5mm
The LX5561 is a low noise amplifier
(LNA) for WLAN applications in the
2.4-2.5 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure of 1.5dB while maintaining
input third order intercept point(IIP3)
of up to +6.5dBm.
The LNA is implemented with bias
circuit and input/output matching circuit
on chip, resulting in simple external
circuit on board. In addition, the on-
chip bias circuit provides stable
performance of gain, NF and current for
voltage variation compared to a general
resistor-network bias circuit.
The LX5561 is available in a 12-pin
2mm x 2mm micro-lead package
(MLPQ-12L).
W W W.
Microsemi
.CO
M
BLOCK DIAGRAM
APPLICATIONS
Vdd
▪
Wireless LAN 802.11b/g
▪
WiMax
Bias
Circuit
RF
Input
RF
Output
Input
Match
Output
Match
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
PRODUCT HIGHLIGHT
LX5561
LX5561
(YNNN : Trace code)
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5561LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5561LL-TR)
Copyright
©
2006
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
P
RODUCTION
D
ATA
S
HEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF Off ........................................................................................... 4 V
Drain Current ............................................................................................................ 40 mA
Total Power Dissipation ............................................................................................0.15 W
RF Input Power ..................................................................................................... +10 dBm
Operation Ambient Temperature ................................................................. -40°C to +85°C
Storage Temperature Range .........................................................................-65C to 150C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure).... 260°C (+0 -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
PACKAGE PIN OUT
W W W.
Microsemi
.CO
M
10
11
12
1
2
3
N/C
RF OUT
N/C
VDD
N/C
RF IN
N/C
4
N/C
9
8
7
6
N/C
5
LL P
ACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Finish
N/C
GND
N/C
FUNCTIONAL PIN DESCRIPTION
Name
RF IN
RF OUT
VDD
GND
Pin #
2
8
12
5
1,3,4,6,7,9,
10,11,
Center
Metal
Description
RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Supply voltage.
Ground.
N/C
Not Connected. They can be treated either as open pins or connected to ground.
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
Copyright
©
2006
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
P
RODUCTION
D
ATA
S
HEET
ELECTRICAL CHARACTERISTICS
Test conditions: V
DD
= 3.3V, I
DD
= 10.5mA, T
A
= +25°C (Room Temperature)
Parameter
Application Frequency Range
Small-Signal Gain
Noise Figure
Input 3
rd
Order Intercept Point
Input P1dB
Input Return Loss
Output Return Loss
Supply Voltage
Supply Current
Symbol
f
S21
NF
IIP3
IP1dB
S11
S22
V
DD
I
DD
Test Conditions
LX5561
Typ
13.0
1.5
6.5
2.5
12
12
3.3
10.5
Units
GHz
dB
dB
dBm
dBm
dB
dB
V
mA
W W W.
Microsemi
.CO
M
Min
2.4
Max
2.5
1.8
Freq. 1 = 2.412GHz, Freq. 2 = 2.432GHz
Freq. = 2.45GHz
E
LECTRICALS
E
LECTRICALS
Copyright
©
2006
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
P
RODUCTION
D
ATA
S
HEET
S-PARAMETER
S11
20
10
0
-10
-20
-30
-40
0
1
2
3
4
5
6
7
Frequency (GHz)
S12
S21
S22
GAIN OVER TEMP
3.0V
15
14
3.3V
3.6V
W W W.
Microsemi
.CO
M
S11, S12, S21, S22 (dB)
-40C
S21 (dB)
13
+25C
12
11
10
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
+85C
Typical S-Parameter Data at Room Temperature
(Vdd = 3.3V, Idd = 10.5mA at Room Temperature)
NOISE FIGURE OVER TEMP
3.0V
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
2.30
3.3V
3.6V
16
15
14
CURRENT OVER TEMP
-40°C
+25°C
+85°C
+85C
Idd (mA)
Noise Figure (dB)
13
12
11
10
9
8
7
+25C
-40C
2.40
Frequency (GHz)
2.50
2.60
6
3
3.1
3.2
3.3
Vdd (V)
3.4
3.5
3.6
INPUT P1DB (+25
C)
3.0V
6
3.3V
3.6V
INPUT IP3 (+25
C)
3.0V
11
10
9
3.3V
3.6V
5
4
IP1dB (dBm)
IIP3 (dBm)
8
7
6
5
G
RAPHS
G
RAPHS
3
2
1
4
0
2.30
2.40
Frequency (GHz)
2.50
2.60
3
2.30
2.40
Frequency (GHz)
2.50
2.60
Copyright
©
2006
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
P
RODUCTION
D
ATA
S
HEET
POWER SWEEP @ 2.45GHZ
Pout
20
15
Gain
Idd
40
35
30
25
20
15
10
5
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12
Pin (dBm)
W W W.
Microsemi
.CO
M
Pout(dBm), Gain(dB)
10
5
0
-5
-10
-15
(Vdd=3.3V, Idq=10.5mA at Room Temperature)
Idd (mA)
G
RAPHS
G
RAPHS
Copyright
©
2006
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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