型号
- 型号
- 关键词
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
厂商名称：ST(意法半导体)
厂商官网：http://www.st.com/
下载文档| 型号 | M36L0R8060B1ZAQT | M36L0R8060T1ZAQF | M36L0R8060T1ZAQT | M36L0R8060T1ZAQE | M36L0R8060T1 | M36L0R8060B1ZAQF | M36L0R8060B1ZAQE | M36L0R8060B1 |
|---|---|---|---|---|---|---|---|---|
| 描述 | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package | 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 | - | 符合 | 符合 | - |
| 厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | - | ST(意法半导体) | ST(意法半导体) | - |
| 零件包装代码 | BGA | BGA | BGA | BGA | - | BGA | BGA | - |
| 包装说明 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 | - | 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 | 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 | - |
| 针数 | 88 | 88 | 88 | 88 | - | 88 | 88 | - |
| Reach Compliance Code | _compli | unknow | _compli | unknow | - | unknow | compli | - |
| 其他特性 | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | - | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | - |
| JESD-30 代码 | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 | R-PBGA-B88 | - | R-PBGA-B88 | R-PBGA-B88 | - |
| JESD-609代码 | e0 | e1 | e0 | e1 | - | e1 | e1 | - |
| 长度 | 10 mm | 10 mm | 10 mm | 10 mm | - | 10 mm | 10 mm | - |
| 内存密度 | 268435456 bi | 268435456 bi | 268435456 bi | 268435456 bi | - | 268435456 bi | 268435456 bi | - |
| 内存集成电路类型 | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | - | MEMORY CIRCUIT | MEMORY CIRCUIT | - |
| 内存宽度 | 16 | 16 | 16 | 16 | - | 16 | 16 | - |
| 混合内存类型 | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM | - | FLASH+PSRAM | FLASH+PSRAM | - |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 | - |
| 端子数量 | 88 | 88 | 88 | 88 | - | 88 | 88 | - |
| 字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | - | 16777216 words | 16777216 words | - |
| 字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | - | 16000000 | 16000000 | - |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | - |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | - | 85 °C | 85 °C | - |
| 最低工作温度 | -25 °C | -25 °C | -25 °C | -25 °C | - | -25 °C | -25 °C | - |
| 组织 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | - | 16MX16 | 16MX16 | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | - | TFBGA | TFBGA | - |
| 封装等效代码 | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 | BGA88,8X12,32 | - | BGA88,8X12,32 | BGA88,8X12,32 | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | - | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | NOT SPECIFIED | 260 | - | 260 | 260 | - |
| 电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | - |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | - | 1.2 mm | 1.2 mm | - |
| 最大待机电流 | 0.00011 A | 0.00011 A | 0.00011 A | 0.00011 A | - | 0.00011 A | 0.00011 A | - |
| 最大压摆率 | 0.052 mA | 0.052 mA | 0.052 mA | 0.052 mA | - | 0.052 mA | 0.052 mA | - |
| 最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | - | 1.95 V | 1.95 V | - |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | - | 1.7 V | 1.7 V | - |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | - |
| 表面贴装 | YES | YES | YES | YES | - | YES | YES | - |
| 技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | - |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | - | OTHER | OTHER | - |
| 端子面层 | Tin/Lead (Sn/Pb) | TIN SILVER COPPER | Tin/Lead (Sn/Pb) | TIN SILVER COPPER | - | TIN SILVER COPPER | TIN SILVER COPPER | - |
| 端子形式 | BALL | BALL | BALL | BALL | - | BALL | BALL | - |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | - | 0.8 mm | 0.8 mm | - |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | - | 8 mm | 8 mm | - |