DRAM MODULE
M53233200CE0/CJ0-C
4Byte 32Mx32 SIMM
(16Mx4 base)
Revision 0.0
June 1999
DRAM MODULE
Revision History
Version 0.0 (June 1999)
• The 4th. generation of 64Mb DRAM components are applied for this module.
M53233200CE0/CJ0-C
DRAM MODULE
M53233200CE0/CJ0-C EDO Mode
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M53233200CE0/CJ0-C is a 32Mx32bits
Dynamic RAM high density memory module. The Samsung
M53233200CE0/CJ0-C consists of sixteen CMOS 16Mx4bits
DRAMs in SOJ packages mounted on a 72-pin glass-epoxy
substrate. A 0.1 or 0.22uF decoupling capacitor is mounted
on the printed circuit board for each DRAM. The
M53233200CE0/CJ0-C is a Single In-line Memory Module
with edge connections and is intended for mounting into 72
pin edge connector sockets.
M53233200CE0/CJ0-C
FEATURES
• Part Identification
- M53233200CE0-C(4K cycles/64ms Ref, SOJ, Solder)
- M53233200CJ0-C(4K cycles/64ms Ref, SOJ, Gold)
• Extended Data Out Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1420mil), double sided component
PERFORMANCE RANGE
Speed
-C50
-C60
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11
Vcc
A8
A9
RAS3
RAS2
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
Vcc
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A11
DQ0-7, DQ9-16
DQ18-25, DQ27-34
W
RAS0 - RAS3
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
NC
Vss
Vss
Vss
60NS
NC
Vss
NC
NC
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
M53233200CE0/CJ0-C
CAS0
RAS0
DQ1
CAS
DQ2
U0
RAS
DQ3
OE W A0-A11 DQ4
DQ1
CAS
DQ2
U1
RAS
DQ3
OE W A0-A11 DQ4
DQ0~DQ3
DQ1
DQ2
DQ3
DQ4
DQ1
DQ2
DQ3
DQ4
CAS
RAS
W A0-A11 OE
U8
CAS0
RAS1
DQ4~DQ7
CAS
RAS
W A0-A11 OE
U9
CAS1
DQ1
CAS
DQ2
U2
RAS
DQ3
OE W A0-A11 DQ4
DQ1
CAS
DQ2
U3
RAS
DQ3
OE W A0-A11 DQ4
DQ1
CAS
DQ2
U4
RAS
DQ3
OE W A0-A11 DQ4
DQ1
CAS
DQ2
U5
RAS
DQ3
OE W A0-A11 DQ4
DQ9~DQ12
DQ1
DQ2
DQ3
DQ4
DQ1
DQ2
DQ3
DQ4
DQ1
DQ2
DQ3
DQ4
DQ1
DQ2
DQ3
DQ4
CAS
RAS
W A0-A11 OE
U10
CAS1
DQ13~DQ16
CAS
RAS
W A0-A11 OE
U11
DQ18~DQ21
CAS2
RAS2
CAS
RAS
W A0-A11 OE
U12
CAS2
RAS3
DQ22~DQ25
CAS
RAS
W A0-A11 OE
U13
CAS3
DQ1
CAS
DQ2
U6
RAS
DQ3
OE W A0-A11 DQ4
DQ1
CAS
DQ2
U7
RAS
DQ3
OE W A0-A11 DQ4
DQ27~DQ30
DQ1
DQ2
DQ3
DQ4
DQ1
DQ2
DQ3
DQ4
CAS
RAS
W A0-A11 OE
U14
CAS3
DQ31~DQ34
CAS
RAS
W A0-A11 OE
U15
W
A0-A11
Vcc
0.1 or 0.22uF Capacitor
for each DRAM
Vss
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
M53233200CE0/CJ0-C
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
16
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC*1
0.8
Unit
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width≤20ns, whcih is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
M53233200CE0/CJ0
Min
-
-
Max
976
896
32
976
896
896
816
16
976
896
10
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-10
2.4
-
I
CC1
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
: Hyper Page Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
嵌入式系统
