JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
M8550
TRANS ISTOR(PNP)
SOT-23
FEATURES
Power dissipation
1.
BASE
2.
EMITTER
3.
COLLECTOR
MARKING: Y21
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Value
-40
-25
-6
-0.8
200
150
-55-150
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
Unit
V
V
V
A
mW
℃
℃
Test condi tions
I
C
= -100μA , I
E
=0
I
C
= -1mA , I
B
= 0
I
E
= -100μA,I
C
=0
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Min
-40
-25
-6
-0.1
-0.1
45
85
40
-0.5
-1.2
150
V
V
MHz
400
Max
Unit
V
V
V
μA
μA
V
CB
= -35V , I
E
I
CBO
= 0
V
CE
= -20V , I
B
I
CEO
= 0
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
CE
=-1V, I
C
= -5mA
V
CE
=-1V, I
C
= -100mA
V
CE
=-1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
=-800mA, I
B
= -80mA
V
CE
=-6V, I
C
= -20mA
f=30MHz
f
T
* PulseTest :pulse width
≤
300µs , duty cycle
≤2%.
CLASSIFICATION OF h
FE(2)
Rank
Range
L
85-300
H
300-400
C,Apr,2012
Typical Characteristics
-300
M8550
1000
Static Characteristic
-1mA
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
——
I
C
COMMON EMITTER
V
CE
=-1V
(mA)
-250
-0.9mA
-0.8mA
T
a
=100
℃
-200
-0.7mA
-0.6mA
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
I
C
-150
-0.5mA
-0.4mA
100
-100
-0.3mA
-50
-0.2mA
I
B
=-0.1mA
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
-2.5
-5
-10
-100
-800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
β=10
-2
V
BEsat
——
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1
-100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
-10
T
a
=25
℃
-1
-1
-10
-100
-800
-0.1
-1
-10
-100
-800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-800
I
C
——
V
BE
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
(mA)
-100
C
ib
(pF)
T
a
=25
℃
I
C
T=
a
10
0
℃
COLLECTOR CURRENT
T=
a
25
℃
-1
-0.1
-0.0
COMMON EMITTER
V
CE
=-1V
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
CAPACITANCE
-10
C
C
ob
10
1
-0.1
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
-1
V
(V)
-10
-20
1000
f
T
——
I
C
COMMON EMITTER
V
CE
=-6V
250
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
200
TRANSITION FREQUENCY
f
T
150
100
100
50
10
0
-2
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
C,Apr,2012
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