JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
M8550
TRANSISTOR(PNP)
Plastic-Encapsulate Transistors
SOT-23
FEATURES
Power dissipation
1.
BASE
2.
EMITTER
MARKING: Y21
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-6
-0.8
200
150
-55-150
Units
V
V
V
A
mW
℃
℃
Test
conditions
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
*
V(BR)
EBO
I
CBO
I
CEO
MIN
-40
-25
-6
-0.1
-0.1
45
85
40
-0.5
-1.2
150
V
V
MHz
300
MAX
UNIT
V
V
V
μA
μA
I
C
= -100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100μA,
V
CB
= -35V ,
V
CE
= -20V ,
I
C
=0
I
E
=0
I
B
=0
h
FE(1)
DC current gain
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
= -800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-6V, I
C
= -20mA
f=30MHz
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
f
T
*
Pulse Test :pulse width
≤
300µs , duty cycle
≤2%.
h
FE(2)
L
85-200
CLASSIFICATION OF
Rank
Range
H
200-300
电子工程世界
