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MA2J7280G

Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SMINI2-F3, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Panasonic(松下)

厂商官网:http://www.panasonic.co.jp/semicon/e-index.html

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Panasonic(松下)
包装说明
R-PDSO-F2
针数
2
制造商包装代码
SMINI2-F3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
MIXER DIODE
最大正向电压 (VF)
0.4 V
频带
L BAND
JESD-30 代码
R-PDSO-F2
元件数量
1
端子数量
2
最高工作温度
125 °C
最大输出电流
0.03 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
30 V
表面贴装
YES
技术
SCHOTTKY
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J7280G
Silicon epitaxial planar type
For super high speed switching
For wave detection
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage
Maximum peak reverse voltage
Forward current
V
RM
I
FM
T
j
Peak forward current
Junction temperature
Storage temperature
T
stg
−55
to
+125
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
F1
V
F2
I
R
t
rr
η
C
t
Forward voltage
tin
Reverse current
on
Terminal capacitance
/D
isc
Reverse recovery time
*
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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Rating
30
30
30
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Low forward voltage V
F
and good wave detection efficiency
η
Small reverse current I
R
Small temperature coefficient of forward characteristic
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
mA
°C
150
125
mA
°C
Conditions
Min
I
F
=
1 mA
I
F
=
30 mA
V
R
=
30 V
Marking Symbol: 2A
Typ
Max
0.4
Unit
V
1.0
ue
300
nA
pF
ns
%
V
R
=
1 V, f
=
1 MHz
1.5
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
1.0
65
Ma
int
en
an
V
IN
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
ce
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Publication date: October 2007
SKH00171AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7280G
I
F
V
F
10
3
10
3
I
R
V
R
1.0
V
F
T
a
10
2
75°C 25°C
T
a
=
125°C
−20°C
10
2
Forward current I
F
(mA)
Reverse current I
R
(
µA
)
Forward voltage V
F
(V)
T
a
=
125°C
0.8
I
F
=
30 mA
0.6
10 mA
0.4
10
10
75°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
1
1
25°C
10
−1
10
−1
0.2
1 mA
10
−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage V
F
(V)
I
R
T
a
10
3
Terminal capacitance C
t
(pF)
10
2
Reverse current I
R
(
µA
)
V
R
=
30 V
10 V
1V
10
1
10
−1
10
−2
−40
0
40
80
120
160
200
2
Ma
int
en
an
ce
/D
isc
on
tin
ue
Ambient temperature T
a
(
°C
)
d
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10
−2
0
5
10
15
20
25
30
0
−40
0
40
80
120
160
200
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
C
t
V
R
I
F(AV)
T
a
I
F
3.0
50
2.5
Forward current (Average) I
F(AV)
(mA)
f
=
1 MHz
T
a
=
25°C
T
j
=
125
°C
40
t
p
T
2.0
DC
30
1.5
20
1.0
0.5
10
0
0
0
5
10
15
20
25
30
0
40
80
120
160
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
SKH00171AED
2
SMini2-F3
Ma
int
en
1
an
ce
0.50
±0.05
1.25
±0.10
/D
isc
on
0.35
±0.05
tin
0.7
±0.1
ue
This product complies with the RoHS Directive (EU 2002/95/EC).
SKH00171AED
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.13
0.02
+0.05
0 to 0.05
±0.1
±0.1
Unit: mm
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(0.15)
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0.4
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±0.2
MA2J7280G
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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参数对比
与MA2J7280G相近的元器件有:MA2J7280GL。描述及对比如下:
型号 MA2J7280G MA2J7280GL
描述 Mixer Diode, L Band, Silicon, ROHS COMPLIANT, SMINI2-F3, 2 PIN DIODE SCHOTTKY 30V 30MA SMINI2
二极管类型 MIXER DIODE 肖特基
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