Schottky Barrier Diodes (SBD)
MA3G751, MA3G751A
(MA751, MA751A)
Silicon epitaxial planar type (cathode common)
Unit: mm
For switching mode power supply
15.0
±0.3
5.0
±0.2
(3.2)
(0.7)
11.0
±0.2
I
Features
•
I
F(AV)
=
20 A rectification is possible
•
Cathode-common dual type
•
Low forward voltage V
F
•
TOP-3F-A1 package
21.0
±0.5
φ
3.2
±0.1
(3.5)
Solder Dip
15.0
±0.2
2.0
±0.2
1.1
±0.1
2.0
±0.1
0.6
±0.2
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak MA3G751
reverse-voltage
MA3G751A
I
F(AV)
I
FSM
T
j
T
stg
Symbol
V
RRM
Rating
40
45
20
150
−40
to
+125
−40
to
+125
A
A
°C
°C
Unit
V
16.2
±0.5
5.45
±0.3
10.9
±0.5
1
2
3
Average forward current
Non-repetitive peak forward-
surge-current
*
Junction temperature
Storage temperature
Note) *: Half sine wave; 10 ms/cycle
1 : Anode
2 : Cathode
(common)
3 : Anode
EIAJ : SC-92
TOP-3F-A1 Package
Marking Symbol
•
MA3G751
: MA751
•
MA3G751A:
MA751A
Internal Connection
1
2
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC) MA3G751
MA3G751A
Forward voltage (DC)
High voltage rectification
V
F
R
th(j-c)
Symbol
I
R
V
R
=
40 V
V
R
=
45 V
I
F
=
10 A
Smoothed current (between junction and case)
Conditions
Min
Typ
Max
5
5
0.55
1.5
V
°C/W
Unit
mA
Note) Rated input/output frequency: 100 MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00051AED
1
MA3G751, MA3G751A
I
F
V
F
100
I
R
V
R
10
6
30
P
D(AV)
I
F(AV)
Average forward power P
D(AV)
(W)
Reverse current I
R
(
µA
)
Forward current I
F
(A)
10
T
a
=
125°C
10
5
T
a
=
150°C
125°C
25
t
0
t
1
t
0
/ t
1
=
1/6
10
4
100°C
10
3
20
1
15
1/3
1/2
DC
10
2
10
0.1
100°C
0.01
25°C
25°C
10
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0
0
10
20
30
40
50
60
0
4
8
12
16
20
24
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Average forward current I
F(AV)
(A)
I
F(AV)
T
C
32
28
24
20
16
1/6
12
DC
8
4
0
20
t
0
/ t
1
=
1/2
1/3
t
0
t
1
Average forward current I
F(AV)
(A)
40
60
80
100
120
140
Case temperature T
C
(
°C
)
2
SKH00051AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
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•
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Please read the following notes before using the datasheets
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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2001 MAR
