MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes
(MAC212A Series)
MAC212
Series
MAC212A
Series
TRIACs
12 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4
MAC212-6, MAC212A6
MAC212-8, MAC212A8
MAC212-10, MAC212A10
On-State Current RMS (TC = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by Rated Current
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (TC = +85°C, Pulse Width = 10
µs)
Average Gate Power (TC = +85°C, t = 8.3 ms)
Peak Gate Current (TC = +85°C, Pulse Width = 10
µs)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM
200
400
600
800
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
12
100
40
20
0.35
2
–40 to +125
–40 to +150
Amp
Amp
A2s
Watts
Watt
Amp
°C
°C
Value
Unit
Volts
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
3–83
MAC212 Series MAC212A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current (Either Direction)
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = +125°C
Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
µs,
Pulse Width = 2
µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)
Symbol
IDRM
—
—
—
—
1.3
10
2
1.75
Min
Typ
Max
Unit
µA
mA
Volts
mA
—
—
—
—
VGT
—
—
—
—
0.2
0.2
IH
—
0.9
0.9
1.1
1.4
—
—
6
2
2
2
2.5
—
—
50
mA
12
12
20
35
50
50
50
75
Volts
p
2%
VTM
IGT
—
tgt
—
1.5
—
µs
dv/dt(c)
—
5
—
V/µs
dv/dt
—
100
—
V/µs
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
FIGURE 1 — CURRENT DERATING
PD(AV), AVERAGE POWER DISSIPATION (WATT)
125
28
24
20
16
12
8.0
4.0
0
0
FIGURE 2 — POWER DISSIPATION
115
α
= 30°
α
α
85
α
= CONDUCTION ANGLE
60°
90°
180°
dc
α
α
α
= CONDUCTION ANGLE
dc
α
= 180°
90°
60°
30°
105
95
75
0
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
3–84
Motorola Thyristor Device Data
MAC212 Series MAC212A Series
FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS
100
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
50
20
10
5.0
TJ = 25°C
TJ = 125°C
FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100
ITSM , PEAK SURGE CURRENT (AMP)
80
60
CYCLE
TC = 70°C
f = 60 Hz
Surge is preceded and followed by rated current
2.0
3.0
NUMBER OF CYCLES
5.0
7.0
10
40
20
0
1.0
2.0
1.0
0.5
0.2
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
FIGURE 6 — TYPICAL GATE TRIGGER CURRENT
I GT, GATE TRIGGER CURRENT (NORMALIZED)
2.0
IH , HOLDING CURRENT (NORMALIZED)
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
–60
FIGURE 7 — TYPICAL HOLDING CURRENT
1.6
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
–40
–20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Motorola Thyristor Device Data
3–85
MAC212 Series MAC212A Series
FIGURE 8 – THERMAL RESPONSE
1.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.5
0.2
0.1
0.05
Z
θJC(t)
= r(t)
•
R
θJC
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
3–86
Motorola Thyristor Device Data
PCB设计
