IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
MAC97A8
4Q Triac
4 October 2016
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to
be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger
circuits.
2. Features and benefits
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate
3. Applications
•
•
•
General purpose low power phase control
General purpose low power switching
Solid-state relay
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 50 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
-
-
Typ
-
-
-
-
-
1
2
2
Max
600
0.6
8
8.8
125
5
5
5
Unit
V
A
A
A
°C
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
MAC97A8
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
30
Typ
4
1
1.4
45
Max
7
10
1.9
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 0.85 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 12
V
D
= 600 V; T
j
= 50 °C; dI
com
/dt = 0.3 A/
ms; I
T
= 0.84 A; gate open circuit
Dynamic characteristics
dV
com
/dt
-
5
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
MAC97A8
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
MAC97A8
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
2 / 12
WeEn Semiconductors
MAC97A8
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
0.6
8
8.8
0.32
50
50
10
50
1
5
0.1
150
125
aaa-009816
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
lead
≤ 50 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 10 mA
I
G
= 14 mA
I
G
= 10 mA
-
-
-
-
-
-
-
-
-
-
-
-40
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
3
I
T(RMS)
(A)
2
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t = 2 microsecs (max)
T(lead) ≤ 80 °C; t = 2 microseconds (max)
003aaa041
0.8
I
T(RMS)
(A)
0.6
0.4
1
0.2
0
10
-3
10
-2
1
t
surge
(S)
10
0
0
50
100
T
lead
(°C)
150
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
MAC97A8
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
3 / 12
WeEn Semiconductors
MAC97A8
4Q Triac
1.2
P
tot
(W)
0.8
003aaa036
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
α
10
I
TSM
(A)
003aaa038
α = 180°
α
8
120°
90°
60°
30°
4
6
0.4
2
0
0
0
0.2
0.4
0.8
0.6
I
T(RMS)
(A)
1
10
10
2
n
10
3
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-
state current; maximum values
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function
of the number of sinusoidal current cycles; maximum
values
003aaa040
I
T
I
TSM
(A)
10
2
T
p
I
TSM
t
dl
T
/dt limit
T2- G+ quadrant
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
MAC97A8
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
4 / 12
