Junction Temperature ......................................................+150°C
Storage Temperature Range
............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........70°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
DD
= 3.3V, V
CM
= 12V, V
SENSE
= V
FS
/2, V
FS
= (V
DD
- V
OH
- V
OL
)/Gain, V
SHDN
= V
DD
, R
L
= 10kΩ to GND, T
A
= -40°C to +125°C,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLY
Supply Voltage
Shutdown Supply Current
Supply Current
Power-Supply Rejection
Ratio
Shutdown Voltage Low
Shutdown Voltage High
DC CHARACTERISTICS
Input Common-Mode Voltage
Range
Common-Mode Rejection
Ratio (Note 5)
Input Bias Current
Input Offset Current
V
CM
Guaranteed by CMRR
-0.1V ≤ V
CM
≤ +36V, V
CM
= RS-
CMRR
+0.1V ≤ V
CM
≤ +36V, V
CM
= RS-
(Note 7)
-0.1
91.3
120
140
dB
145
2
2
80
50
nA
nA
+36
V
V
DD
I
SHDN
T
A
= +25°C, R
L
= ∞
I
DD
-40°C ≤ T
A
≤ +125°C, R
L
= ∞
1.7V ≤ V
DD
≤ 5.5V, V
OUT
= 1V
100
110
0.55
1.3
Guaranteed by PSRR
1.7
0.3
21
5.5
0.8
31.2
41.5
μA
V
μA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PSRR
V
IL
V
IH
dB
V
V
I
RS+
,
I
RS-
I
OS
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Maxim Integrated
│
2
MAX44284
36V, Input Common-Mode, High-Precision,
Low-Power Current-Sense Amplifier
Electrical Characteristics (continued)
(V
DD
= 3.3V, V
CM
= 12V, V
SENSE
= V
FS
/2, V
FS
= (V
DD
- V
OH
- V
OL
)/Gain, V
SHDN
= V
DD
, R
L
= 10kΩ to GND, T
A
= -40°C to +125°C,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MAX44284F (T
A
= +25°C)
MAX44284F
(-40°C
≤T
A
≤ +125°C)
MAX44284H (T
A
= +25°C)
Input Offset Voltage (Note 3)
V
OS
MAX44284H
(-40°C
≤T
A
≤ +125°C)
MAX44284W (T
A
= +25°C)
MAX44284W
(-40°C
≤T
A
≤ +125°C)
MAX44284E (T
A
= +25°C)
MAX44284E
(-40°C
≤T
A
≤ +125°C)
Input Offset Voltage
Temperature Drift
TCV
OS
MAX44284F
Gain
G
MAX44284H
MAX44284W
MAX44284E
MAX44284F (T
A
= +25°C)
MAX44284F
(-40°C
≤T
A
≤ +125°C)
MAX44284H (T
A
= +25°C)
Gain Error (Note 4)
GE
MAX44284H
(-40°C
≤T
A
≤ +125°C)
MAX44284W (T
A
= +25°C)
MAX44284W
(-40°C
≤T
A
≤ +125°C)
MAX44284E (T
A
= +25°C)
MAX44284E
(-40°C
≤T
A
≤ +125°C)
Output Voltage High
V
OH
V
OH
= V
DD
- V
OUT
,
R
L
= 10kW to GND
I
SOURCE
= 100μA
Output Voltage Low
Input Differential Impedance
Output Impedance
V
OL
No load
I
SINK
= 100µA
6
200
0.3
25
0.05
0.05
0.05
±15
±10
±2
MIN
TYP
±2
MAX
±10
±28
±12
±28
±20.5
±38
±26
±40
50
50
100
200
500
0.05
0.15
0.20
0.15
0.26
0.15
0.35
0.16
0.39
35
20
1
20
mV
MW
mW
mV
%
V/V
nV°C
μV
UNITS
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Maxim Integrated
│
3
MAX44284
36V, Input Common-Mode, High-Precision,
Low-Power Current-Sense Amplifier
Electrical Characteristics (continued)
(V
DD
= 3.3V, V
CM
= 12V, V
SENSE
= V
FS
/2, V
FS
= (V
DD
- V
OH
- V
OL
)/Gain, V
SHDN
= V
DD
, R
L
= 10kΩ to GND, T
A
= -40°C to +125°C,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
AC CHARACTERISTICS
MAX44284F
Small-Signal Bandwidth
BW
3dB
MAX44284H
MAX44284W
MAX44284E
Input Voltage-Noise Density
AC Common-Mode Rejection
Ratio
e
n
AC CMRR
f = 1kHz
f = 10kHz, 600mV
P-P
sinusoidal
waveform
V
OUT
from 250mV to 2.5V,
Gain = 50, within 12-bit accuracy
V
OUT
from 250mV to 2.5V,
Gain = 100, within 12-bit
accuracy
V
OUT
from 250mV to 2.5V,
Gain = 200, within 12-bit
accuracy
V
OUT
from 250mV to 2.5V,
Gain = 500, within 12-bit
accuracy
Capacitive Load
C
L
R
ISO
= 0W
R
ISO
= 20W
3
1.8
1
0.4
150
80
1500
1500
µs
1800
nV/√
Hz
dB
kHz
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Settling Time
t
S
4000
500
2200
pF
Note 2:
All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 3:
V
OS
is calculated by applying two values of V
SENSE
(10% of full-scale range to 90% of full-scale range).
Note 4:
Gain Error is calculated by applying two values of V
SENSE
(10% of full-scale range to 90% of full-scale range) and calculat-
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