Operating Temperature Range ......................... -40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
*GATE
is internally driven and clamped. Do not drive GATE with external source.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
CC
, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.7V to +13.2V;
EN2
(MAX5926) = 0V; V
S
(see Figure 1) = +1.05V to V
CC
;
T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 5V, R
L
= 500Ω from OUT to GND, C
L
= 1μF, SLEW = open,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
POWER SUPPLIES
V
CC
Operating Range
V
S
Operating Range
Supply Current
SYMBOL
V
CC
I
CC
V
UVLO
t
D,UVLO
R
LP
V
LP,TH
I
CB
t
LP
2.7V < V
CC
< 5V
t
DG
V
S
CONDITIONS
MIN
2.7
V
S
as defined in Figure 1
1.0
1.5
1.73
123
4
3
43
172
2.06
900
200
30
10
102
200
37
34
30
45
40
40
40
50
37
40
60
50
60
50
60
42
50
80
60
80
60
70
µA
350
65
20
205
235
FET is fully enhanced, SC_DET = V
CC
Default value, V
S
and V
CC
increasing, Figure 1
(Note 2)
TYP
MAX
13.2
V
CC
2.5
UNITS
V
V
mA
V
µs
ms
Ω
ms
mV
UNDERVOLTAGE LOCKOUT (UVLO)
UVLO Threshold
V
CC
UVLO Deglitch Time
LOAD-PROBE
V
CC
UVLO Startup Delay
Load-Probe Resistance (Note 3)
Load-Probe Timeout
Load-Probe Threshold Voltage
CIRCUIT BREAKER
2.47
5V < V
CC
< 13.2V
(Note 4)
TC = high (MAX5926), V
CC
= 2.7V and V
CB
= 1V
MAX5924
2.7V ≤ V
CC
≤ 13.2V
V
CC
= 2.7V, V
CB
= 1V,
T
A
= +25°C
TC = low
(MAX5926),
MAX5925 (Note 5)
V
CC
= 2.7V, V
CB
= 1V, T
A
= +105°C
(MAX5925D)
2.7V ≤ V
CC
≤ 13.2V,
T
A
= +25°C
2.7V ≤ V
CC
≤ 13.2V,
T
A
= +105°C (MAX5925D)
Circuit-Breaker Programming
Current
I
CB25
I
CB85
TC = low
(MAX5926),
MAX5925 (Note 5)
V
CC
= 2.7V and
V
CB
= 1V, T
A
= +85°C
2.7V ≤ V
CC
≤ 13.2V,
T
A
= +85°C
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Maxim Integrated
│
2
MAX5924/MAX5925/
MAX5926
Electrical Characteristics (continued)
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
(V
CC
, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.7V to +13.2V;
EN2
(MAX5926) = 0V; V
S
(see Figure 1) = +1.05V to V
CC
;
T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 5V, R
L
= 500Ω from OUT to GND, C
L
= 1μF, SLEW = open,
T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Circuit-Breaker Programming
Current During Startup
Circuit-Breaker Enable Threshold
Circuit-Breaker Comparator Offset
Voltage
Fast Circuit-Breaker Offset
Resistor
Slow Circuit-Breaker Delay
Fast Circuit-Breaker Delay
Circuit-Breaker Trip Gate Pulldown
Current
Circuit-Breaker Temperature
Coefficient
OUT Current
MOSFET DRIVER
SYMBOL
I
CB,SU
V
CB,EN
V
CB_OS
R
CBF
t
CBS
t
CBF
Figure 3
V
CB
- V
SENSE
= 10mV
V
CB
- V
SENSE
= 500mV
V
GATE
= 2.5V, V
CC
= 13.2V, T
A
= -40°C to
+85°C
V
GATE
= 2.5V, V
CC
= 13.2V, T
A
= -40°C to
+105°C (MAX5925D)
MAX5924, TC = high (MAX5926)
MAX5925, TC = low (MAX5926)
13.5
12
1.2
0.95
V
GATE
- V
OUT
, rising gate voltage (Note 6)
2.3
CONDITIONS
MIN
TYP
2 x I
CB
3.6
0.3
1.9
1.6
280
27
27
0
3300
120
2.7V ≤ V
CC
≤ 13.2V, T
A
= -40°C to +85°C
External Gate Drive
V
GS
V
GATE
- V
OUT
2.7V ≤ V
CC
≤ 13.2V,
T
A
= -40°C to +105°C
(MAX5925D)
4.65
±4.7
2.7
2.95
MAX
UNITS
µA
V
mV
kΩ
ms
ns
mA
mA
ppm/°C
µA
I
GATE,PD
TC
ICB
I
OUT
4.2
4.0
2.19
239
0.747
0.747
5.5
5.5
9.5
0.84
7.2
V
7.2
V/ms
µA
Load Voltage Slew Rate
Gate Pullup Current Capacity
ENABLE COMPARATOR
EN, EN1 Reference Threshold
EN, EN1 Hysteresis
EN, EN1 Input Bias Current
DIGITAL OUTPUTS (PGOOD,
PGOOD)
Power-Good Output Low Voltage
Power-Good Output Open-Drain
Leakage Current
Power-Good Trip Point
Power-Good Hysteresis
SR
I
GATE
SLEW = open, C
GATE
= 10nF
V
GATE
= 0V
C
SLEW
= 300nF, C
GATE
= 10nF (Note 8)
V
EN/UVLO
V
EN,HYS
I
EN
V
OL
I
OH
V
PG,HYS
V
EN
(MAX5924/MAX5925) or
V
EN1
(MAX5926) rising, T
A
= -40°C to +85°C
V
EN
(MAX5925D) rising,
T
A
= -40°C to +105°C
EN (MAX5924/MAX5925) = V
CC
,
EN1 (MAX5926) = V
CC
I
OL
= 1mA
PGOOD/PGOOD = 13.2V
0.795
0.795
30
±8
0.3
0.2
0.850
V
0.875
mV
±50
0.4
1
4.7
nA
V
µA
V
V
V
THPGOOD
V
GATE
- V
OUT
, rising gate voltage
V
CB_EN
3.6
0.36
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Maxim Integrated
│
3
MAX5924/MAX5925/
MAX5926
Electrical Characteristics (continued)
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
(V
CC
, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.7V to +13.2V;
EN2
(MAX5926) = 0V; V
S
(see Figure 1) = +1.05V to V
CC
;
T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 5V, R
L
= 500Ω from OUT to GND, C
L
= 1μF, SLEW = open,
T
A
= +25°C, unless otherwise noted.) (Note 1)
LOGIC AND TIMING (TC, LATCH (MAX5926),
EN2
(MAX5926)
Autoretry Delay
Input Voltage
Input Bias Current
Time to Clear a Latched Fault
Note
Note
Note
Note
Note
1:
2:
3:
4:
5:
t
RETRY
V
IH
V
IL
Autoretry mode
PARAMETER
SYMBOL
CONDITIONS
MIN
0.6
2.0
0.4
Logic high at 13.2V
MAX5924A/MAX5924B
MAX5925A/MAX5925B
MAX5926 in latched mode
3
200
TYP
1.6
MAX
3.3
UNITS
s
V
µA
µS
I
BIAS
T
CLR
All devices are 100% tested at T
A
= +25°C and +85°C. All temperature limits at -40°C are guaranteed by design.
V
CC
drops 30% below the undervoltage lockout voltage during t
DG
are ignored.
R
LP
is the resistance measured between V
CC
and SC_DET during the load-probing phase, t
LP
.
Tested at +25°C and +85°C. Guaranteed by design at -40°C.
The circuit-breaker programming current increases linearly from V
CC
= 2.25V to 5V. See the Circuit-Breaker Current vs.
Supply Voltage graph in the
Typical Operating Characteristics.
Note 6:
See the
Startup Mode
section for more information.
Note 7:
V
GATE
is clamped to 17V (typ) above ground.
Note 8:
dv/dt = 330 x 10-9/C
SLEW
(V/ms), nMOS device used for measurement was IRF9530N. Slew rate is measured at the load.
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