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MB8M

0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:HY Electronic

厂商官网:http://www.hygroup.com.tw

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器件:MB8M

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器件参数
参数名称
属性值
厂商名称
HY Electronic
Reach Compliance Code
unknow
二极管类型
BRIDGE RECTIFIER DIODE
文档预览
MB05M thru MB10M
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 0.8
Ampere
MBM
C0.5
molded plastic technique results in inexpensive product
Lead tin plated copper
.031(0.8)
.019(0.5)
~ ~
+
-
.106(2.7)
.090(2.3)
.193(4.9)
.177(4.5)
.165(4.2)
.146(3.7)
.051(1.3)
.035(0.9)
.014(.35)
.006(.15)
.256(6.5)
.217(5.5)
MECHANICAL DATA
Polarity:Symbol molded on body
Weight: 0.0044 ounces,0.125 grams
Mounting position :Any
.217(5.5)
.177(4.5)
.106(2.7)
.090(2.3)
.031(0.8)
.019(0.5)
Dimensions in inches and (millimeters)
.106(2.7)
.090(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@T
J
=25℃
@T
J
=125℃
@T
A
=40
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
MB05M
50
35
50
MB1M
100
70
100
MB2M
200
140
200
MB4M
400
280
400
0.8
MB6M
600
420
600
MB8M
800
560
800
MB10M
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
30
1.1
5.0
500
15
75
-55 to +150
-55 to +150
A
V
μA
pF
℃/W
Typical Junction Capacitance Per Element (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
~ 372 ~
RATING AND CHARACTERTIC CURVES
MB05M thru MB10M
FIG.1-FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD CURRENT
AMPERES
0.8
0.6
0.4
0.2
0.1
MOUNTED ON BOARD
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.2-MAXIMUM NON-REPETITVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
40
30
20
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
10
20
40
60
80
100
120
140
160
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60H
Z
AMBIENT TEMPERATURE,
FIG.3-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,(µA)
INSTANTANEOUS FORWARD CURRENT,(A)
10
FIG.4-TYPICAL FORWARD CHARACTERISTICS
T
J
=125°C
10
1.0
1.0
0.1
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
T
J=
25°C
PULSE WIDTH:300us
2% DUTY CYCLE
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE(
P
F)
10
TJ=25°C,f=1MHZ
1.0
1
4
10
REVERSE VOLTAGE, VOLTS
100
~ 373 ~
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参数对比
与MB8M相近的元器件有:MB05M、MB10M、MB1M、MB2M、MB4M、MB6M。描述及对比如下:
型号 MB8M MB05M MB10M MB1M MB2M MB4M MB6M
描述 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 HY Electronic - - HY Electronic HY Electronic HY Electronic HY Electronic
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
二极管类型 BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
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