MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
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Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AC
ITO-220AC
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
MBR1090
MBR10100
PIN 1
PIN 2
2
1
MBRF1090
MBRF10100
PIN 1
PIN 2
1
CASE
TO-263AB
K
TYPICAL APPLICATIONS
2
1
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Circuit configuration
10 A
90 V, 100 V
150 A
0.65 V
150 °C
TO-220AC, ITO-220AC, D
2
PAK (TO-263AB)
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
MBR1090
90
90
90
10
150
130
0.5
10 000
1500
-65 to +150
MBR10100
100
100
100
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Jun-18
Document Number: 89034
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current per at working peak
reverse voltage
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
TEST CONDITIONS
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (2)
V
F
(1)
SYMBOL
MAX.
0.80
0.65
0.75
100
6.0
UNIT
V
µA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
R
JC
MBR
60
2.0
MBRF
-
3.5
MBRB
60
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
MBR10100-E3/4W
MBRF10100-E3/4W
MBRB10100-E3/4W
MBRB10100-E3/8W
UNIT WEIGHT (g)
1.845
1.661
1.384
1.384
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
Resistive or Inductive Load
160
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
140
Average Forward Current (A)
8
120
6
100
4
80
2
60
0
0
50
100
150
40
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Maximum Non-Repetitive Peak Forward Surge Current
Revision: 11-Jun-18
Document Number: 89034
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
100
100
T
J
= 150 °C
10
T
J
= 125 °C
1
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
10
1
0.1
T
J
= 25 °C
MBR(B)
0.1
0.01
0.1
1
10
100
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics
Fig. 6 -
Typical Transient Thermal Impedance
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
10
Junction to Case
10
T
J
= 125 °C
1
1
0.1
0.1
0.01
0.01
T
J
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
MBRF
0.001
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics
Fig. 7 -
Typical Transient Thermal Impedance
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
1
10
100
Reverse
Voltage
(V)
Fig. 5 -
Typical Junction Capacitance
Revision: 11-Jun-18
Document Number: 89034
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.415 (10.54)
0.380 (9.65)
Vishay General Semiconductor
TO-220AC
0.161 (4.08)
DIA.
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 11-Jun-18
Document Number: 89034
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 11-Jun-18
Document Number: 89034
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
