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MBR140G-Z41-B

1 A, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO., LTD
MBR140
Preliminary
DIODE
1.0A SCHOTTKY BARRIER
RECTIFIER
DESCRIPTION
The UTC
MBR140
is a 1.0A schottky barrier rectifier, it uses
UTC’s advanced technology to provide the customers with high
surge capability, high efficiency, high current capability, low power
loss and low forward voltage drop, etc.
The UTC
MBR140
is suitable for free wheeling and polarity
protection, etc.
DO-41
FEATURES
* Low Reverse Current
* Low Stored Charge, Majority Carrier Conduction
* Low Power Loss/High Efficiency
* Highly Stable Oxide Passivated Junction
SYMBOL
ORDERING INFORMATION
Package
DO-41
DO-41
Pin Assignment
1
2
K
A
K
A
Packing
Tape Box
Tape Reel
Ordering Number
Lead Free
Halogen Free
MBR140L-Z41-B
MBR140G-Z41-B
MBR140L-Z41-R
MBR140G-Z41-R
Note: Pin Assignment: A: Anode
K: Cathode
MARKING
Cathode Band for uni-directional Only
MBR140
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R601-259.c
MBR140
Preliminary
DIODE
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Working Peak Reverse Voltage
V
RWM
40
V
Repetitive Peak Reverse Voltage
V
RRM
40
V
Maximum RMS Reverse Voltage
V
RMS
28
V
DC Blocking Voltage
V
R
40
V
Average Rectified Output Current (T
A
=105°C)
I
O
1.0
A
Peak Forward Surge Current 8.3ms Single Half
I
FSM
30
A
Sine-Wave Superimposed on Rated Load
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
50
UNIT
°C/W
PARAMETER
Junction to Ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
V
F
I
R
TEST CONDITIONS
I
F
=1.0A, T
C
=25°C
I
F
=1.0A, T
C
=125°C
Rated DC Voltage, T
C
=25°C
Rated DC Voltage, T
C
=125°C
MIN
TYP MAX UNIT
0.70
V
0.65
50
μA
10
mA
Instantaneous Forward Voltage Drop (Note 2)
Instantaneous Reverse Current (Note 2)
Notes: 1. 2.0μs Pulse Width, f = 1.0KHz.
2. Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-259.c
MBR140
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-259.c
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参数对比
与MBR140G-Z41-B相近的元器件有:MBR140、MBR140L-Z41-R、MBR140G-Z41-R、MBR140L-Z41-B。描述及对比如下:
型号 MBR140G-Z41-B MBR140 MBR140L-Z41-R MBR140G-Z41-R MBR140L-Z41-B
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
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