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MBR30200PTC0G

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN

器件类别：分立半导体    二极管   

厂商名称：Taiwan Semiconductor

厂商官网：http://www.taiwansemi.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
TO-3P, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS, UL RECOGNIZED
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JEDEC-95代码
TO-247AD
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
200 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
200 V
最大反向电流
100 µA
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
TO-247AD (TO-3P)
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
10 in-lbs maximum
Weight:
6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBR
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge Current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change,(Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL 3035
PT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
2
-
V
F
0.60
0.82
0.73
I
R
dV/dt
R
θJC
T
J
T
STG
1
20
15
10,000
1.4
- 55 to +150
- 55 to +150
0.75
0.65
-
-
35
24
35
MBR
3045
PT
45
31
45
MBR
3050
PT
50
35
50
MBR
3060
PT
60
42
60
30
30
200
1
0.85
0.75
-
-
0.5
10
0.95
0.92
1.02
0.98
1.05
-
1.10
-
0.1
mA
V/μs
O
MBR
PT
90
63
90
MBR
PT
100
70
100
MBR
PT
150
105
150
MBR
UNIT
V
V
V
A
A
A
A
PT
200
140
200
3090 30100 30150 30200
V
C/W
O
O
C
C
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR30xxPT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-3P
PACKING
30 / Tube
Note 1: "xx" defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT)
EXAMPLE
PREFERRED P/N
MBR3060PT C0
MBR3060PT C0G
MBR3060PTHC0
PART NO.
MBR3060PT
MBR3060PT
MBR3060PT
H
AEC-Q101
QUALIFIED
PACKING CODE
C0
C0
C0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
35
AVERAGE FORWARD
A
CURRENT (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
225
200
175
150
125
100
75
50
25
0
1
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
CASE TEMPERATURE (℃)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
REVERSE LEAKAGE CURRENT (mA)
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
10
FORWARD CURRENT (A)
10
TJ=125℃
TJ=25℃
1
1
0.1
TJ=25℃
0.01
MBR3035PT-3045PT
MBR3050PT-30200PT
0
20
40
60
80
100
120
140
0.1
MBR3035PT-45PT
MBR3050PT-60PT
MBR3090PT-200PT
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
0.01
0.001
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
TRANSIENT THERMAL IMPEDANCE(℃/W)
f=1.0MHz
Vsig=50mVp-p
MBR3035PT-MBR3045PT
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10000
JUNCTION CAPACITANCE (pF)
A
10
1000
MBR3050PT-MBR3060PT
1
MBR3090PT-MBR30200PT
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
15.90
7.90
5.70
20.80
3.50
19.70
-
2.90
1.93
2.97
1.12
5.20
4.90
2.70
0.51
Max
16.40
8.20
6.20
21.30
4.10
20.20
4.30
3.40
2.18
3.22
1.22
5.70
5.16
3.00
0.76
Unit (inch)
Min
0.626
0.311
0.224
0.819
0.138
0.776
-
0.114
0.076
0.117
0.044
0.205
0.193
0.106
0.020
Max
0.646
0.323
0.244
0.839
0.161
0.795
0.169
0.134
0.086
0.127
0.048
0.224
0.203
0.118
0.030
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1309029
Version: J13
MBR3035PT thru MBR30200PT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309029
Version: J13
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参数对比
与MBR30200PTC0G相近的元器件有：MBR3090PTC0G、MBR3090PTC0、MBR3090PTHC0、MBR3035PTC0、MBR3050PTHC0、MBR30100PTC0G、MBR30100PTC0、MBR30150PTC0G、MBR3045PTC0G。描述及对比如下：
型号 MBR30200PTC0G MBR3090PTC0G MBR3090PTC0 MBR3090PTHC0 MBR3035PTC0 MBR3050PTHC0 MBR30100PTC0G MBR30100PTC0 MBR30150PTC0G MBR3045PTC0G
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
包装说明 TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED LOW POWER LOSS, UL RECOGNIZED
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 0.85 V 0.85 V 0.85 V 0.82 V 0.75 V 0.85 V 0.85 V 1.02 V 0.82 V
JEDEC-95代码 TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD TO-247AD
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A
元件数量 2 2 2 2 2 2 2 2 2 2
相数 1 1 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 15 A 15 A 15 A 15 A 15 A 15 A 15 A 15 A 15 A 15 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 200 V 90 V 90 V 90 V 35 V 50 V 100 V 100 V 150 V 45 V
最大反向电流 100 µA 500 µA 500 µA 500 µA 1000 µA 1000 µA 500 µA 500 µA 500 µA 1000 µA
表面贴装 NO NO NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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