MBR80100R,MBR80100R pdf中文资料,MBR80100R引脚图,MBR80100R电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否无铅

不含铅

是否Rohs认证

符合

厂商名称

GeneSiC

包装说明

DO-5, 1 PIN

Reach Compliance Code

compliant

Is Samacsys

应用

POWER

外壳连接

ANODE

配置

SINGLE

二极管元件材料

SILICON

二极管类型

RECTIFIER DIODE

最大正向电压 (VF)

0.84 V

JEDEC-95代码

DO-203AB

JESD-30 代码

O-MUPM-D1

最大非重复峰值正向电流

1000 A

元件数量

相数

端子数量

最高工作温度

150 °C

最低工作温度

-55 °C

最大输出电流

80 A

封装主体材料

METAL

封装形状

ROUND

封装形式

POST/STUD MOUNT

最大重复峰值反向电压

100 V

最大反向电流

1000 µA

表面贴装

技术

SCHOTTKY

端子形式

SOLDER LUG

端子位置

UPPER

Base Number Matches

文档预览

MBR8045 thru MBR80100R

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-5 Package

RRM

= 45 V - 100 V

F(AV)

= 80 A

Maximum ratings, at T

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive peak reverse voltag

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

RRM

RMS

stg

Conditions

MBR8045(R)

-55 to 150

MBR8060(R)

-55 to 150

MBR8080(R) MBR80100(R)

-55 to 150

100

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Average forward current (per

pkg)

Peak forward surge current

(per leg)

Maximum forward voltage

(per leg)

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

Symbol

F(AV)

FSM

Conditions

= 125 °C

= 8.3 ms, half sine

= 80 A, T

= 25 °C

= 100 °C

= 150 °C

MBR8045(R)

1000

0.75

0.50

MBR8060(R)

1000

0.78

0.50

MBR8080(R) MBR80100(R)

1000

0.84

0.50

1000

0.84

0.50

Unit

Thermal characteristics

Thermal resistance, junction-

case (per leg)

Mounting torque

ΘJC

°C/W

Inch ponds

(in-pb)

www.genesicsemi.com/silicon-products/schottky-rectifiers/

MBR8045 thru MBR80100R

www.genesicsemi.com/silicon-products/schottky-rectifiers/

MBR8045 thru MBR80100R

Package dimensions and terminal configuration

Product is marked with part number and terminal configuration.

DO- 5 (DO-203AB)

Inches

Min

0.669

-----

0.422

0.115

-----

0.236

-----

0.140

0.687

0.794

1.020

0.453

0.200

0.460

0.280

-----

0.589

0.063

0.175

Max

1/4 –28 UNF

17.19

-----

10.72

2.93

-----

6.00

-----

3.56

Min

Millimeters

Max

17.44

20.16

25.91

11.50

5.08

11.68

7.00

-----

14.96

1.60

4.45

www.genesicsemi.com/silicon-products/schottky-rectifiers/

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

GeneSiC Semiconductor

MBR80100 MBR8045 MBR8045R MBR80100R MBR8080 MBR8060 MBR8080R MBR8060R

参数对比

与MBR80100R相近的元器件有：BLU1206M-5231-BT10、MBR80100、MBR8045R。描述及对比如下：

型号	MBR80100R	BLU1206M-5231-BT10	MBR80100	MBR8045R
描述	Schottky Diodes u0026 Rectifiers 100V - 80A Schottky Rectifier	Fixed Resistor, Thin Film, 0.25W, 5230ohm, 150V, 0.1% +/-Tol, 10ppm/Cel, 1206,	Headers u0026 Wire Housings 12 CKT VERT HEADER	Schottky Diodes u0026 Rectifiers 45V - 80A Schottky Rectifier
Reach Compliance Code	compliant	compliant	compliant	compliant
端子数量	1	2	1	1
最高工作温度	150 °C	155 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C
封装形式	POST/STUD MOUNT	SMT	POST/STUD MOUNT	POST/STUD MOUNT
技术	SCHOTTKY	THIN FILM	SCHOTTKY	SCHOTTKY
是否无铅	不含铅	-	不含铅	不含铅
厂商名称	GeneSiC	-	GeneSiC	GeneSiC
包装说明	DO-5, 1 PIN	-	O-MUPM-D1	O-MUPM-D1
应用	POWER	-	POWER	POWER
外壳连接	ANODE	-	CATHODE	ANODE
配置	SINGLE	-	SINGLE	SINGLE
二极管元件材料	SILICON	-	SILICON	SILICON
二极管类型	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.84 V	-	0.84 V	0.75 V
JEDEC-95代码	DO-203AB	-	DO-203AB	DO-203AB
JESD-30 代码	O-MUPM-D1	-	O-MUPM-D1	O-MUPM-D1
最大非重复峰值正向电流	1000 A	-	1000 A	1000 A
元件数量	1	-	1	1
相数	1	-	1	1
最大输出电流	80 A	-	80 A	80 A
封装主体材料	METAL	-	METAL	METAL
封装形状	ROUND	-	ROUND	ROUND
最大重复峰值反向电压	100 V	-	100 V	45 V
最大反向电流	1000 µA	-	1000 µA	1000 µA
表面贴装	NO	-	NO	NO
端子形式	SOLDER LUG	-	SOLDER LUG	SOLDER LUG
端子位置	UPPER	-	UPPER	UPPER
Base Number Matches	1	-	1	1