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MBRD3150

3 A, 60 V, SILICON, RECTIFIER DIODE
3 A, 60 V, 硅, 整流二极管

器件类别:半导体    分立半导体   

厂商名称:SMC

厂商官网:http://www.smc-diodes.com/

下载文档
器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
PLASTIC, CASE 369C-01, DPAK-3
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
TIN LEAD
端子位置
SINGLE
包装材料
PLASTIC/EPOXY
工艺
SCHOTTKY
结构
SINGLE
壳体连接
CATHODE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
应用
POWER
相数
1
最大重复峰值反向电压
60 V
最大平均正向电流
3 A
最大非重复峰值正向电流
75 A
文档预览
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0798, Rev. -
MBRD360-MBRD3200
Green Products
MBRD360-MBRD3200 SCHOTTKY RECTIFIER
Applications:
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
150
°C
T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
OPTION 1(MX)
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0798, Rev. -
MBRD360-MBRD3200
Green Products
OPTION 2(CJ)
DPAK
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0798, Rev. -
MBRD360-MBRD3200
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
D
3
60
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (3A)
= Reverse Voltage (60V)
= SSG
= Year
= Week
= Lot Number
Cautions:
Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBRD360
Package
DPAK
(Pb-Free)
Shipping
2500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0798, Rev. -
MBRD360-MBRD3200
Green Products
Maximum Ratings/Electrical Characteristics /Thermal-Mechanical Specifications:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle Non-Repetitive
Surge Current
(8.3ms
Single half sine-
wave)
Max. Forward Voltage Drop @3A, 25°C
Max. Reverse Current @VRWM, 25°C
Max. Junction Capacitance(Note1)
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal Resistance Junction
to Case
(DC
operation)
Approximate Weight
Case Style
Symbol
VRWM
I
F(AV)
I
FSM
V
F
I
R
C
T
T
J
T
stg
R
θJC
wt
360
60
380
80
3100
100
3
80
3150
150
3200
200
Units
V
A
A
0.65
0.75
250
0.85
1
-55 to +150
-55 to +150
6.0
0.39
DPAK
0.90
100
0.92
V
mA
pF
°C
°C
°C/W
g
Pulse Width < 300µs, Duty Cycle <2%
Note1: Measured at 1.0 MHz and applied reverse voltage of 5.0V D.C.
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0798, Rev. -
MBRD360-MBRD3200
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
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参数对比
与MBRD3150相近的元器件有:MBRD3100、MBRD360、MBRD380、MBRD3200。描述及对比如下:
型号 MBRD3150 MBRD3100 MBRD360 MBRD380 MBRD3200
描述 3 A, 60 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE
端子数量 2 2 2 2 2
元件数量 1 1 1 1 1
加工封装描述 PLASTIC, CASE 369C-01, DPAK-3 PLASTIC, CASE 369C-01, DPAK-3 PLASTIC, CASE 369C-01, DPAK-3 PLASTIC, CASE 369C-01, DPAK-3 PLASTIC, CASE 369C-01, DPAK-3
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes Yes Yes
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子涂层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
工艺 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
结构 SINGLE SINGLE SINGLE SINGLE SINGLE
壳体连接 CATHODE CATHODE CATHODE CATHODE CATHODE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
应用 POWER POWER POWER POWER POWER
相数 1 1 1 1 1
最大重复峰值反向电压 60 V 60 V 60 V 60 V 60 V
最大平均正向电流 3 A 3 A 3 A 3 A 3 A
最大非重复峰值正向电流 75 A 75 A 75 A 75 A 75 A
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