M B R F2035C T
TH R U
M B R F20200C T
Isolation 20.0 AM PS. S chottky Barrier R ectifiers
Voltage R ange
35 to 200 Volts
C urrent
20.0 Am peres
Features
Plastic m aterial used carries U nderw riters
Laboratory C lassifications 94V-0
M etal silicon junction, m ajority carrier conduction
Low pow er loss, high efficiency
H igh current capability, low forw ard voltage drop
H igh surge capability
For use in low voltage, high frequency inverters,
free w heeling, and polarity protection applications
G uardring for overvoltage protection
H igh tem perature soldering guaranteed:
o
260 C /10 seconds,0.25”(6.35m m )from case
ITO -220A B
.1 34 (3 .4) D IA
.11 3 ( 3 .0 )D I A
.112 (2 .85 )
.10 0 ( 2 .5 5)
. 2 72 ( 6 .9 )
. 2 48 ( 6 .3 )
. 6 06 (1 5. 5)
. 5 83 (1 4. 8)
M echanical D ata
C ases: ITO -220AB m olded plastic
Term inals: Leads solderable per M IL-STD -750,
M ethod 2026
Polarity: As m arked
M ounting position: Any
M ounting torque: 5 in. - lbs. m ax
W eight: 0.08 ounce, 2.24 gram s
. 11 0 (2 .8 )
.09 8 ( 2 . 5 )
. 5 4 3 (1 3 . 8 )
. 5 1 2 (1 3 . 2 )
PIN 1
PIN 3
PIN 2
D im ensions in inches and (m illim eters)
M axim um R atings and Electrical C haracteristics
R ating at 25℃ am bient tem perature unless otherw ise specified.
Single phase, half w ave, 60 H z, resistive or inductive load.
For capacitive load, derate current by 20%
Sym bol
M B R F M B R F
Type N um ber
2035
CT
2045
CT
M axim um R ecurrent P eak R everse V oltage
M axim um R M S V oltage
M axim um D C B locking Voltage
M axim um A verage Forw ard R ectified C urrent at
Total device
T
C
=135
o
C
P er Leg
P eak R epetitive Forw ard C urrent P er leg (R ated V
R
,
S quare W ave, 20K H z) at Tc=135
o
C
P eak Forw ard S urge C urrent, 8.3 m s S ingle H alf
S ine-w ave S uperim posed on R ated Load (JE D E C
m ethod )
P eak R epetitive R everse S urge C urrent (N ote 1)
M axim um Instantaneous Forw ard V oltage at (N ote 2)
I
F
=10A , Tc=25
O
C
I
F
=10A , Tc=125
O
C
I
F
=20A , Tc=25
O
C
I
F
=20A , Tc=125
O
C
M axim um Instantaneous R everse C urrent @ Tc=25℃
at R ated D C B locking V oltage
@ Tc=125℃
V oltage R ate of C hange, (R ated V
R
)
Typical Therm al R esistance P er Leg (N ote 3) R
θ
JC
Typical Junction C apacitance
R M S Isolation Voltage (M B R F Type O nly) from
Term inals to H eatsink w ith t=1.0 S econd, R H
≦
30%
O perating Junction Tem perature R ange T
J
S torage Tem perature R ange T
STG
N otes: 1.
2.
3.
4.
5.
6.
MBRF MBRF MBRF MBRF MBRF
2050
2060 20100 20150 20200
CT
CT
CT
CT
CT
U nits
V
RRM
V
RMS
V
DC
I
(AV)
I
FR M
I
FSM
I
R R M
V
F
35
24
35
45
31
45
50
35
50
60
42
60
20
10
20.0
150
100
70
100
150
105
150
200
140
200
V
V
V
A
A
A
1.0
-
0.57
0.84
0.72
0.1
15.0
1.5
400
0.80
0.70
0.95
0.85
0.5
0.85
0.75
0.95
0.85
0.15
150.0
3.5
310
4500 (N ote 4)
3500 (N ote 5)
1500 (N ote 6)
-65 to +150
-65 to +175
0.99
0.87
1.23
1.10
A
V
I
R
dV/dt
R
θ
JC
Cj
mA
V/uS
℃
/W
pF
V
℃
℃
10,000
V
ISO
T
J
T
S TG
2.0us Pulse W idth, f=1.0 K H z
P ulse Test: 300us P ulse W idth, 1% D uty C ycle
Therm al R esistance from Junction to C ase P er Leg, w ith H eatsink S ize (4”x6”x0.25”) A l-P late
C lip m ounting (on case), w here lead does not overlap heatsink w ith 0.110” offset.
C lip M ounting (on case), w here leads do overlap heatsink.
S crew M ounting w ith 4-40 screw , w here w asher diam eter is
≦
4.9 m m (0.19”)
- 174 -
RATINGS AND CHARACTERISTIC CURVES (MBRF2035CT THRU MBRF20200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
20
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
16
125
100
75
12
8
50
4
25
0
0
50
CASE TEMPERATURE. ( C)
o
100
150
0
1
10
NUMBER OF CYCLES AT 60Hz
100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=150
0
C
10
Pulse Width=300 s
1% Duty Cycle
INSTANTANEOUS REVERSE CURRENT. (mA)
Tj=125
0
C
1
1
Tj=25
0
C
Tj=75
0
C
0.1
0.1
MBRF2035CT-MBRF2045CT
MBRF2050CT & MBRF2060CT
MBRF20100CT-MBRF20200CT
0.01
Tj=25
0
C
MBRF2035CT-MBRF2045CT
MBRF2050CT-MBRF20200CT
0.01
0
0.1
0.2
0.3 0.4
0.5
0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
TRANSIENT THERMAL IMPEDANCE,
O
C/W
100
JUNCTION CAPACITANCE.(pF)
10
1,000
1
MBRF2035CT-MBRF2045CT
MBRF2050CT-MBRF20200CT
100
0.1
1
10
REVERSE VOLTAGE. (V)
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
- 175 -
ARM技术
