TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF2030, 35, 40, 45, 50CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
MBRF20
30CT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
20
150
2
50
125
-55~+150
28
31.5
35
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
V
MBRF20
35CT
MBRF20
40CT
MBRF20
45CT
MBR
F2
0
50CT
Unit
TO-220F
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBRF2030CT
MBRF2035CT
Reverse voltage
V
(BR)
MBRF2040CT
MBRF2045CT
MBRF2050CT
MBRF2030CT
MBRF2035CT
Reverse current
I
R
MBRF2040CT
MBRF2045CT
MBRF2050CT
Forward voltage
Typical total capacitance
V
F
C
tot
*
MBRF2030-45CT
MBRF2050CT
MBRF2030-50CT
V
R
=4V,f=1MHz
650
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
I
F
=10A
0.7
0.8
pF
V
0.1
mA
I
R
=0.1mA
Test conditions
Min
30
35
40
45
50
V
Typ
Max
Unit
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Nov,2010
工控电子
